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A band-pass-filter (BPF) based on silicon substrate was designed and simulated. Different software was applied to design and simulate the character of the filter. A three-order filter was designed dedicating to range 2.4 GHz-2.5 GHz use. The ideal topology circuit was designed with passive inductors and capacitors. Moreover, the integrated passive devices (IPDs) were modeled and simulated with thin...
Band-pass-filters (BPF) are critical components in the RF modules. Conventional discrete component solutions, like those from discrete SMDs or LTCC (Low temperature co-fired ceramic) technology. Typically, these passive components consume 60%–70% of the footprint area. As miniaturization is becoming a trend for cost-reduction of wireless products, there is a need to make these devices in smaller form-factors...
In this paper, a numerical simulation of thermal transport at the nanoscale is developed by solving the phonon Boltzmann transport equation by the Monte Carlo method. A full phonon dispersion is used to determine accurately the vibrational frequencies and group velocities of all phonon modes. Simultaneous conservation of energy and momentum in anharmonic phonon-phonon scattering events in enabled...
The photo-thermal properties of vertically etched gallium arsenide nanowire arrays are examined using Raman spectroscopy. The nanowires are arranged in square lattices with a constant pitch of 400 nm, and diameters ranging from 50 to 155 nm. The arrays were illuminated using a 532 nm laser with an incident energy density of 10 W/mm2. Nanowire temperatures were highly dependent on the nanowire diameter,...
Nano scale actuators consisting of a free-standing bilayer of ferromagnetic shape memory alloy (FSMA) and silicon with critical lateral dimensions of 250 nm are designed, nanofabricated and characterized in-situ in a scanning electron microscope (SEM). Upon Joule heating and cooling, fully reversible nano actuation in out-of-plane direction of up to 4 % of actuator length is observed. In-situ measurements...
The design is presented of virtual current loop antenna (VCLA) for use on CMOS ICs technology that promises to integrate a complete 60GHz system on single chip that combines a good performance in both bandwidth and radiation efficiency. The design was based on intensive electromagnetic simulations using HFSS software package. Different virtual loop antennas have been designed for different frequencies...
We reported an approach to grow carbon nanotube (CNT) arrays on graphene to obtain stable high emission current density along with scalable total ultrahigh emission current of more than 200 mA. Microwave plasma CVD was employed to grown multi-layered graphene directly on silicon wafer followed by synthesis of vertically well-aligned patterned CNT arrays, the excellent thermal conductivity and electric...
In this paper, a unified equivalent circuit model is proposed for coplanar waveguides, which is physics-based, rather simple, and yet applicable to various resistivity substrates including very lossy substrates up to 110GHz. The unified model results are compared with Momentum simulations up to 110GHz on 8000 μ-cm, 15 μ-cm and 0.015 μ-cm silicon substrates. The unified model is also used to predict...
The on-going effort of integrating heterogeneous circuits as well as the increasing length of global interconnect are driving the semiconductor community towards 3-D integrated circuits. In this work, thermal paths within a 3-D stack are investigated using the HotSpot simulator, and the results are compared to experimental data of a fabricated two layer stack with a single back metal layer. Resistive...
A novel helium-3 ion bombardment technique is proposed for creating locally semi-insulating substrate areas. A helium-3 dose of only 1.5×1013cm−2 increases a Si substrate resistivity from 6Ω-cm to 1.5kΩ-cm, which improves the quality factor of a 2-nH inductor with a 140µm-diameter by 38% (Q=16.3). An aluminum mask is used for covering active areas, and at most 15-µm distance from the mask edge is...
The complex conductivity of CVD-grown graphene films between 0.1 and 1.6 THz are obtained using a non-destructive THz etalon transmittance technique. Critical parameters such as ionized-impurity scattering width and chemical potential are derived. The technique can be extended to extract the complex ac conductivity parameters of other thin conducting films or 2DEG materials with high sheet conductance.
With more implementation of LED in lighting and communication applications, increasing demand for function enrichment and miniaturization has emerged. Existed technologies are highly challenged. System-in-package (SiP) technology is very promising in terms of function integration and cost reduction. In this paper, a novel SiP platform for LED system with integrated driver and wireless control function...
The thermal conductivity of single crystal silicon can be reduced by the introduction of boundaries at the nanoscale. We present the measured thermal conductivity of single crystal silicon nanobeams patterned with a single row of holes at room temperature: the hole diameter and the spacing vary from 100nm to 250nm and from 200 nm to 800nm, respectively. A steady-state four-probe joule heating measurement...
In this paper, we present a generic modeling study of the interposer package thermal performance as a function of the interposer thermal properties and thickness for different temperature specifications. The modeling study is based on an extensive DOE of thermal finite element simulations that extract the maximum allowable logic power as a function of the interposer properties. A graphical representation...
We review in this paper some key enabling process integration modules, the development of which will allow pursuing the trend of energy efficiency improvement in sub-28nm FDSOI technologies.
A new family of oxygen and fluorine free Nickel (Ni) precursors, which are based on allyl and alkylpyrrolylimine ligands [Ni(allyl)(PCAI-R)], has been developed and evaluated for a Ni metal film with thermal and plasma enhanced ALD using H2/NH3 as a reducing agent. From Ni(allyl)(PCAI-iPr), pure Ni film with very low resistivity (5.3 µO·cm) was obtained at 400 °C by PEALD, which is close to the resistivity...
A tri-cavity Chebyshev bandpass filter based on high resistivity silicon is proposed and manufactured at Ku-band. MEMS etching process is utilized to etch via-holes array on high resistivity silicon. A fabricated tri-cavity Chebyshev bandpass filter after being packaged exhibits an insertion loss of 3.7 dB with a 6.8% relative bandwidth at a center frequency of 16 GHz and the return loss is better...
Band-pass-filters (BPF) are critical components in the RF modules. Conventional discrete component solutions, like those from discrete SMDs or LTCC (Low temperature co-fired ceramic) technology. Typically, these passive components consume 60%–70% of the footprint area. As miniaturization is becoming a trend for cost-reduction of wireless products, there is a need to make these devices in smaller form-factors...
A band-pass-filter (BPF) based on silicon substrate was designed and simulated. Different software was applied to design and simulate the character of the filter. A three-order filter was designed dedicating to range 2.4 GHz-2.5 GHz use. The ideal topology circuit was designed with passive inductors and capacitors. Moreover, the integrated passive devices (IPDs) were modeled and simulated with thin...
The recent developments in wide band-gap devices based GaN and SiC is showing a high impact on the PV-inverter technology, which is strongly influenced by efficiency, power density and cost. Besides the high efficiency of PV inverters, also the mechanical size, the compactness and simple structure have an important role in the cost reduction. To increase the efficiency of PV systems, most of solutions...
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