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In this study, titanium oxide (TiO2) photocatalyst film were prepared by liquid phase deposition (LPD) using a deposition solution of boric acid (H3BO3) and ammonium hexafluoro-titanate [(NH4)2TiF6]. The LPD-TiO2 films were deposited on Si substrate, and soaked in the methylene blue solution under UV irradiation at room temperature. The dye decolorization efficiency was improved with the high annealing...
Wafer-level bonding of LiNbO3 (LN) and Si with thermally grown SiO2 layer is demonstrated using surface-activated bonding method for the realization of LiNbO3-on-Insulator (LNOI) on Si.
We demonstrate a direct transfer technique of Au thin layer onto electroplated Au surface from a surface of atomically smooth master wafer. An atomically smooth Au surface with a root mean square surface roughness of 0.6 nm could be transferred from the master wafer. We also examined its applicability to room-temperature Au-Au bonding in atmosphere. A high bonding strength of about 225 MPa was obtained.
To manufacture high-performance heterostructured semiconductor devices inexpensively, we investigated the correlation among conditions of surface treatment, particle density, and bonding strength in non-cleanroom environment. We systematically examined schemes of cleaning wafers, hydrophilic / hydrophobic treatments, and conditions of bonding, and obtained strong bonds sufficient in device use.
Solar radiation represents one of the most accessible within renewable energy sources. The rapid scaling-up in the number of installed photovoltaic (PV) systems is accompanied by an increase not only in the size of the associated investments and opportunities but also of the related risks. In this context, the study of the environmental effects which may bring to a decrease in their performance during...
The Si-Si surface activated bonding interface was observed by transmission electron microscopy by comparing conventional room temperature bonding to liquid nitrogen temperature bonding. As result, the thickness of intermediate layer at low temperature was 7.3 nm, compared to 7.6 nm of that at room temperature.
Wafer-level thermocompression bonding (TCB) using aluminum (Al) is presented as a hermetic sealing method for MEMS. The process is a CMOS compatible alternative to TCB using metals like gold (Au) and copper (Cu), which are problematic with respect to cross contamination in labs. Au and Cu are commonly used for TCB and the oxidation of these metals is limited (Au) or easily controlled (Cu). However,...
Si/GaAs interfaces fabricated by surface-activated bonding at room temperature were examined by plane-view transmission electron microscopy. It was hypothesized that the interface resistance would be originated from surface defects on the Si and GaAs substrates introduced during the bonding process.
Ultraviolet (UV)/ozone is well known as an effective approach to clean and modify surfaces, and thus quite suitable for pretreating bonding surfaces to obtain a better bonding quality. We demonstrate UV/ozone-assisted GaAs/Si bonding with an enhanced bonding strength, and further apply this technology to integrate quantum dot (QD) lasers on Si substrate. The 600-μm-long bonded laser with manually...
Hydrophilic bonding is a routine process for micro structure manufacture. However it can be difficult to achieve repeatable high strength bonding whilst minimising interface voids. We present results that illustrate key relationships between activation and bonding parameters and demonstrate controllable bond strength and annealing void area.
For the first time, this paper investigates anodic bonding using the latest chemically-strengthened glass called Gorilla Glass (from Corning). Gorilla Glass has many excellent properties for MEMS/NEMS applications, including hardness (resistance to scratching), flexibility, high fracture toughness and antibacterial resistance. However, the high thermal expansion coefficient of Gorilla Glass (7.58ppm/°C)...
To realize a nanogap-based single-molecule label-free detection device for surface-enhanced Raman scattering measurements, a new approach utilizing DNA origami (DO) as a sacrificial nano-structure is proposed. In this approach, gold nanoparticles (AuNPs) are precisely self-assembled to form a dimer structure on opposite faces of a rectangular DO structure. The AuNPs are then fixed on a silicon chip...
Surface photovoltage (SPV) method was used to evaluate the silicon-sapphire interface potential barrier of silicon on sapphire (SOS) wafers obtained by CVD technique. The method provides monitoring of silicon-sapphire interface quality. Fabrication process parameters which influence on SPV signal were found. Silicon deposition temperature has a great importance on SPV signal. It was found that SPV...
Three dimensional electronic packages have been extensively investigated to meet the ever increasing needs for size reduction and performance improvement of electronic devices. To overcome the disadvantages of conventional wire bonding in 3D packages, through-silicon-vias (TSVs) filled with Cu has been proposed as a new chip-to-chip vertical interconnection. In addition, TSVs can be also used as thermal...
Focused ultraviolet (UV) emission is an ideal configuration to achieve in-situ curing. Conventional UV light-emitting diode (LED) packages, such as ceramic substrate packages, cannot achieve focused UV emission because they possess no reflector and lens, which are required to converge light. Plastic reflectors may be used, but common LED packaging plastics suffer from low UV reflectance and UV degradation...
Chattering alleviation is an area of great interest as far as the practicality of sliding mode controllers (SMC) are concerned. Reaching law based SMC design is a well-known chattering alleviation method available in the literature. Among the different conventional reaching law strategies that are available in the literature, power rate reaching law (PRRL) is found to be effective in terms of chattering...
Specifications and fabrication process suitable for a small wafer with the diameter of half-inch, which is used for a minimal fab, is presented. We beveled wafer edge by rapping and polishing in order to clean the edge and to suppress the strong surface tension at the edge. To show the crystallographic orientation of the wafer, we introduced laser marking process. By the processes, we have formed...
In this work we demonstrate how a novel single free electron detector “Timed Photon Counter” (TiPC) may benefit from ultra-thin MgO transmission dynodes (tynodes). These membranes are fabricated through MEMS process technologies, with atomic layer deposition (ALD) as the most apt technique for growing films of good quality, with excellent control over thicknesses and extremely low surface roughness...
The paper reports the improvement of tensile strength of single-crystal silicon (SCS) microstructures fully coated with sub-micrometer thick diamond like carbon (DLC) film using plasma enhanced chemical vapor deposition (PECVD). To minimize the deformations or damages caused by non-uniform coating of DLC, which has high residual stress, the released SCS specimens with the dimensions of 120 μm long,...
The design of a stable electret on the basis of SiO2 would allow to create miniature microphones and other sensors that are built directly into the chip and manufactured simultaneously with the chip in a single technological cycle. However, the task for today is not solved because of the low electret stability, due to its hydrophilicity. The experiments showed that the most promising in terms of stability...
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