The design of a stable electret on the basis of SiO2 would allow to create miniature microphones and other sensors that are built directly into the chip and manufactured simultaneously with the chip in a single technological cycle. However, the task for today is not solved because of the low electret stability, due to its hydrophilicity. The experiments showed that the most promising in terms of stability charge in were SiO2 oxides obtained by thermal oxidation. Studies have shown that the best electret properties of silicon dioxide obtained in the atmosphere of wet oxygen compared to samples obtained by other methods of oxidation. We studied the influence of different nanoscale waterproofing layers on the stability of the SiO2 electret. All the studied repellents have significantly improved the stability of charge in SiO2: a) HMDS (hexamethyldisilazane) b) DMDCS (dimethyldichlorosilane) c) high temperature photoresist FPT-1-40. A repellent FPT-1-40 being a positive photoresist, can be easily integrated into standard planar process and is compatible with all standard operating procedures for etching, cleaning, etc. d) polyimide nanoscale layers of Langmuir-Blodgett films. The use of this coating allowed to obtain not only the most stable electret based on SiO2, but also to combine its manufacturing with the standard silicon process, in particular, with the use of high temperatures.