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Monolayer graphene sheet has been integrated on top of small disk optical resonator in SOI platform. Electro-optic interaction between graphene and whispering gallery mode of the cavity has been demonstrated and studied for modulation application.
A high speed Si modulator with fringe field junctions is presented. Low carrier absorption (1.3 dB/mm) and VπL (1.8 V-cm) are demonstrated. The measured modulation speed and depth are 11.8-GHz and 8-dB.
We demonstrate an all-adiabatic silicon-waveguide polarization-division multiplexer. On-chip insertion loss is less than 0.5 dB and polarization extinction ratio is higher than 20 dB in C and L bands.
We review our progress in the development of nonlinear devices from the silicon optical fibre platform. The nonlinear performance will be benchmarked through demonstrations of high speed all-optical wavelength conversion, modulation, and continuum generation.
We demonstrate the possibility of forming ultra-compact, field-configurable, and low-power resonance-based passive integrated photonic structures based on charge accumulation in a high-quality multilayer material platform comprising Si/SiO2/Si layers prepared through direct bonding of SOI wafers.
We demonstrate the operation of a low VπLπ, lumped, and compact Michelson modulator fabricated in SOI. The modulator operates up to 25 Gbps with measured error free operation up to 12.5 Gbps.
A novel method is proposed to dynamically modulate the THz wave front with photo-generated carriers. Some special wave fronts are generated using this method. This new method is structure free, high resolution, and broadband.
We report an electrically pumped AlGaInAs-silicon VCSEL using a high-contrast grating reflector on silicon. CW output power >1.5 mW, thermal resistance of 1.46 K/mW, and 5 Gb/s direct modulation is demonstrated.
We demonstrate an integrated photonic electromagnetic field sensor based on an electrooptic polymer refilled slot photonic crystal waveguide modulator driven by a bowtie-antenna. The minimum detectable electric field is measured to be 2.5V/m at 8.4GHz.
The design and implementation of a CMOS integrated analog to digital interface dedicated to hybrid integration of MEMS resistive microphone is presented. Audio sensing is achieved with an innovative low-cost technology that uses single crystal piezoresistive silicon nanowires as transducer in a MEMS. The circuit composed of a low-noise instrumentation preamplifier followed by a single bit fourth order...
This paper proposes and analyzes a complex orthogonal multiplexing scheme based on the use of Amicable Hadamard matrices for non-selective Rayleigh fading channels. A thorough analysis provides exact closed-form mathematical formulas or upper and lower bounds together with simulation results for the estimation of the system bit error probability (BEP) with maximum likelihood vector detection. The...
RF photonics technologies will enable future wideband multifunction systems used in electronic warfare, communications, sensing, and radar applications to become easily reconfigured and cover broad regions of the spectrum. Photonics allow broad regions of the spectrum to be covered with a single link. Tuning the optical oscillator enables a down conversion of the signal to a common IF, reducing the...
We demonstrate that charge carrier transport in organic semiconductor, accompanying the modulation of terahertz transmission, depends on the crystalline ordering. We could obtain charge carrier concentrations in organic semiconductor layers, pentacene thin films, on a silicon substrate.
Heterogeneous integration enables all the elements of photonic systems to be fabricated on a single chip with silicon foundries allowing circuits to meet the complexity, and cost requirements of the next generation of communication systems.
InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.
An eigenmode expansion method is used to model and optimize optical couplers between SOI waveguides and Ge/SiGe devices. Electroabsorption modulator performances are estimated in term of extinction ratio and insertion losses.
Silicon Photonics will become a mature technology at industrial level in one or two years. An overview including the status of the art of this technology is reported, and the main technological issues still to be focused on are discussed. Finally, ST view of the manufacturability status and of volume applications is provided as well as our vision of a Silicon Photonic roadmap.
We present a 30 GHz silicon photonic platform that includes low-loss passive components as well as high-speed modulators and photodetectors. The platform is available to the community as part of the OpSIS-IME MPW service.
A novel vertical grating coupler-based silicon photonic devices and photonic integrated circuits (PIC) have been demonstrated on CMOS-compatible SOI Platform. The monolithically PIC demonstrated 4Gb/s optical interconnection.
We present MZI Silicon Photonics modulators with an advanced transmission line design which overcomes bandwidth limitations arising from crosstalk and improves linear losses. Push-pull optical bandwidth of 22.2 GHz with VπL=1.6 V·cm is experimentally validated.
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