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We present a hybrid resonant linear frequency comb generator and a modulator for pulse formation and fast electro-optic modulation. Integrated in a hybrid silicon-on-silicon nitride platform, such devices utilize the high-speed plasma dispersion in Si and high-Q resonance in SiN.
In this talk, the recent achievements in the development and optimization of hybrid multilayer CMOS-compatible material systems (e.g., SiN/Si, multi-layer Si/SiO2, etc.) to address all the practical requirements of ultra-fast and ultra-compact integrated photonic structures will be discussed. Using these hybrid material systems, a series of ultracompact and high-performance reconfigurable photonic...
We report a resonant hybrid modulator at rates exceeding cavity linewidth using coupling modulation. Integrated in a hybrid silicon-on-silicon nitride (SON) platform, the device utilizes the high-speed plasma dispersion in Si and high-Q resonance in SiN.
We present fully integrated 100Gb/s CWDM transmitter and receiver chips, including uncooled lasers, 25Gb/s modulators and Ge PDs, wavelength multiplexer and de-multiplexer, all fabricated on a monolithic Si-photonics platform with low-cost wafer-scale manufacturing.
We demonstrate a hybrid material platform, in which a layer of crystalline silicon is placed on top of a silicon nitride on a silicon dioxide die. We also report an efficient interlayer coupling structure with 0.02 dB insertion loss. Using this hybrid platform, high-Q resonators are demonstrated.
We demonstrate here the peak-dragging phenomenon in a nanobeam photonic crystal cavity with low optical power thresholds. In our device, Joule-heating mechanism enhances the absorption-induced heat by collecting the generated photocarries in a reverse-biased pn-junction.
We demonstrate field-programmable 2×2 optical switch based on resonance elimination through dielectric breakdown phenomenon on a high-quality multilayer platform (Si/SiO2/Si). Fabricated device exhibits an on/off extinction ratio of more than 20 dB for both routes.
We design a low insertion loss (1.9 dB) and wideband (3-dB bandwidth of 50 nm) interlayer grating coupler for the Si/SiO2/SiN platform. Measured performance of the fabricated device agrees well with the theoretically predicted results.
Monolayer graphene sheet has been integrated on top of small disk optical resonator in SOI platform. Electro-optic interaction between graphene and whispering gallery mode of the cavity has been demonstrated and studied for modulation application.
We demonstrate the possibility of forming ultra-compact, field-configurable, and low-power resonance-based passive integrated photonic structures based on charge accumulation in a high-quality multilayer material platform comprising Si/SiO2/Si layers prepared through direct bonding of SOI wafers.
We present mechanically-tunable microdisk resonators using electrostatic actuation in double-layer-SOI material platform. The possibility of achieving resonance wavelength shifts as-high-as 5.5 nm/volt and 1.35 nm/nm over a wavelength tuning range of 35 nm is demonstrated.
We propose a new scheme for tunable narrowband filters using a silicon nitride on silicon-on-insulator platform, which enables reconfigurability, low propagation loss, and high power handling capability. Preliminary results are provided.
We propose to integrate silicon nitride on silicon-on-insulator platform for devices which require low insertion loss and high power handling capability. Preliminary results including silicon nitride growth, high-Q resonator fabrication, and vertical integration are presented.
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