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Noise measurements are efficient for interface trap density characterization in MOSFETs and can be extended to bare silicon-on-insulator wafers. A physical model to explain the experimental results will be presented. The impact of measurement parameters, like die area and probe distance, is discussed comparing experimental and calculated characteristics. Important clarifications concerning the effective...
Laser Fault Injection (LFI) is one of the most powerful methods of inducing a fault as it allows targeting only specific areas down to single transistors. The downside compared to non-invasive methods like introducing clock glitches is the largely increased search space. An exhaustive search through all parameters including dimensions for correct timing, intensity, or length might not be not feasible...
We demonstrate active resonance wavelength stabilization for silicon microrings with an in-resonator BF2-implanted photodetector using a slope-detection method. Our experiment reveals active resonance wavelength stabilization with ∼1dB transmission intensity variations upon a 7oC 10mHz modulation.
We describe the transfer of chemical vapor deposition grown graphene onto silicon-on-sapphire waveguides to form heterostructure waveguide photodetectors which had responsivities of 0.9 mA/W and 4.5 mA/W at 1.55 μm and 2.75 μm wavelengths, respectively.
Silicon is perfectly suited for spin-driven applications. Recent progress and challenges regarding CMOS-compatible spin-based devices are reviewed. A realization of an intrinsic non-volatile logic-in-memory architecture in an MRAM array is demonstrated.
Metal induced recombination is a significant loss mechanism in standard and especially in high efficiency solar cells. It is usually measured by making solar cells with different metal contact areas, and inferring the metal induced recombination rate from the change in open circuit voltage. There are many errors which can occur if the test structure is not designed correctly - a small finger spacing...
The use of low temperature ALD grown ZnO as emitter and TCO coating for a-Si PIN solar cells is studied. Several cells are fabricated with 30nm ALD ZnO on top. The grown ALD ZnO without any additional TCO resulted in photovoltaic behavior. This confirms that the ZnO is acting as both an n-type semiconductor and TCO layer simultaneously. The measured open circuit voltage Voc = 0.25V and short-circuit...
Dual-junction solar cells consisting of rear-heterojunction GaInP top cells and back-junction, back-contacted crystalline Si bottom cells were fabricated and characterized. Our calculations show that theoretical efficiencies up to 38.9% can be achieved with Si-based tandem devices. In our experiments, the two subcells were fabricated separately and stacked with an index matching fluid. In contrast...
We have achieved the first monolithically integrated triple-junction InGaP/GaAsP/SiGe solar cell on Si substrate, achieving an adjusted efficiency of 20% AM0 1-sun. The practical achievable maximum AM0 efficiency for the optimal cell near this lattice constant is 39%. The combination of this high efficiency with the ability to process such cells on larger area lower-cost silicon substrates motivates...
Lattice matched and current matched GaAsP/SiGe tandem solar cell on Si has the potential of 40% efficiency. This paper describes our design, fabrication and improvement of this tandem solar cell. This tandem device has achieved efficiencies of 20.6% and 20.2% under 1X and 2.2X, respectively. Current matching between top cell and bottom cell is realized by manipulating the bottom cell active area and...
The ESD robustness of planar Si and Ge diodes on Silicon-on-Insulator (SOI) optical interposer is studied by using TLP and vfTLP system. Although Ge diodes show a lower failure current, a superior clamping capability with a resistance lowering behavior, which is attributed to the intrinsic material properties of Ge, makes Ge diodes possess a promising potential for ESD protections.
Two terminal floating gate capacitive memory structures with novel materials and fabrication strategies continue to attract tremendous interest [1,2] since they form the backbone of conventional nonvolatile flash memory technology. Some of these approaches that involve high temperature deposition or ultra-high vacuum systems are not suitable for low-cost large area electronics. Spin-coated polymer...
This paper demonstrates the use of an amplifier to strengthen the horizontal magnetic field of parallel vertical Hall-effect device (VHD). In this study, parallel VHD structure is used to reduce the cross-coupled noise. The guard ring is used to confine the conductive channel width for better device sensitivity. The sensitivity of the parallel VHD can be improved by using an amplifier, which amplifies...
The aim of this paper is to give an overview of the technical and regulatory issues the DSOs are facing when operating the system with rising share of DRES. We follow up with and overview of the current status of the boundary conditions for the provision of ancillary services from DRES, in particular from PV generation in different EU countries and the relevant experiences with policy making. The...
Titanium dioxide, known as a high-k biocompatible dielectric transducer material, is processed by means of ALD and applied to a 3D structure with dimensions typical for multi-site multi-channel in-vivo neural interfaces. High uniformity, high areal capacitance, and in particular low leakage current densities are achieved within a sufficiently wide operation voltage window. The results demonstrate...
This paper propose the experimental determination of ideality coefficient or emission coefficient for an actual diode in laboratory, using NI ELVIS II+, which enables current-voltage characteristic lifting semi-logarithmic coordinates. In addition it is determined the reverse bias saturation current of diode.
The behavior of silicon bypass diodes for space solar cells was experimentally investigated at high temperatures up to 250 °C for the design of Japan's Mercury probe BepiColombo MMO. Though the reverse current increased to nearly 10 mA at 250 °C, the operation at such high temperatures did not permanently damaged the diodes. When the diodes were irradiated with protons and then kept at high temperatures,...
The performance of photovoltaic modules depends on temperature and irradiance. It is necessary to translate the measured I–V characteristics to standard test condition for assessing degradation, and such translations require temperature coefficients for voltage and current. Prediction of the annual energy yield also requires knowledge of the temperature coefficients. IEC 60891 provides a standard...
The changes in short-circuit current of photovoltaic (PV) cells and modules with temperature are routinely modeled through a single parameter, the temperature coefficient (TC). This parameter is vital for the translation equations used in system sizing, yet in practice is very difficult to measure. In this paper, we discuss these inherent problems and demonstrate how they can introduce unacceptably...
The present article reports on experimental measurements aimed at assessing general theoretical expressions of temperature coefficients in the case of crystalline silicon solar cells. The relevance of a recently proposed relation between the temperature dependence of open circuit voltage and the external radiative efficiency of photovoltaic devices is demonstrated. Unusual temperature sensitivities...
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