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In this paper, a silicon cavity-mode resonator based on locally resonant phononic crystal (PnC) is experimentally studied. The PnC resonator is realized by creating line defects on a two-dimension (2-D) silicon PnC. The silicon resonator was fabricated by micro machining process, and tested by a combination of the fluid coupling method and Laser Doppler Vibrometer. Two resonant frequencies (7.93MHz...
We demonstrate a Fabry-Perot cavity for sensing highly absorbing liquids at terahertz frequencies. A sub-wavelength layer of liquid sample is accommodated between a ground plane and a silicon window. A probing terahertz pulse through the window can interrogate a minute change in the bulk properties of the sample. The sensing is manifested through a shift in the Fabry-Perot resonance. Importantly,...
We report a tunable silicon microring laser with 150 kHz line-width, above 29 mW output power and 60dB SMSR. Coherent optical OFDM 4-QAM and 16-QAM transmissions using this laser are also demonstrated.
This paper outlines the approach to realize a MEMS pressure sensor suitable for meeting the stringent requirements of sensing in a downhole environment reaching 175-oC temperature and 200-MPa pressure while maintaining an accuracy of better than 0.02% for an extended measurement period of several weeks during oil and gas exploration. A few sensing structures are proposed and strategies for their optimization...
Photonic crystal (PhC) nanobeam cavities have attracted increasing attention owing to the advantages of high Q-factor, small mode volume and no limitation of FSR. Various PhC cavities have been developed for optical communications, optical sensors, optomechanics, etc.. We investigate the design, fabrication, and experimental characterization of high quality factor PhCnanobeam cavities on silicon....
A hybrid III-V/SOI resonant cavity photodetector has been demonstrated, which comprises an InP grating reflector and a Si grating reflector. It can selectively detects an incident light with 1.54-μm wavelength and TM polarization.
The light emission from Ge quantum dots are in the range of 1.3 to 1.6 µm which is the telecommunication wavelengths. Light-emitting devices based on Ge quantum dots embedded in optical microcavities are one possible solution for Si light source. In order to enhance the light emission, we embed Ge self-assembled quantum dots into various Si microcavities. Due to the Purcell effect, the light emission...
We describe a planar photonic circuit in silicon-on-insulator that efficiently generates pairs of non-degenerate photons in a single mode output channel through spontaneous four-wave mixing when pumped with 10's of µW of continuous-wave radiation at wavelengths near 1.5 µm. The structure is based on a set of three coupled photonic crystal microcavities, each of which is judiciously coupled to single...
The integration of a photonic information processing system onto a single chip requires great research effort toward engineering metamaterials for miniaturization of the optical devices and circuits. We discuss nanoscale engineered optical nonlinearities for modulation and wave mixing of optical fields, and metal-dielectric-semiconductor nanostructures and compositions to construct nanoemitters for...
Heterogeneously integrated DFB lasers, consisting of thin InP membranes coupled to low loss Si wire waveguides possess several advantages compared to traditional all-InP DFB lasers. The thin membranes give a large optical confinement factor and their small surface area results in relatively small parasitic capacitances. Both properties make these lasers very well suited for high speed direct modulation...
Phoxonic crystals are periodic nanostructures that are simultaneously photonic and phononic crystals. Phoxonic cavities can trap visible or near infrared light and Gigahertz phonons in the same tiny volume, while phoxonic waveguides can confine their propagation to a tiny solid core, in both cases possibly promoting their interaction. This paper reviews various phoxonic nanostructures that have been...
In this paper, we have proposed a 60-GHz air cavity antenna array with checkerboard structure based on the MEMS silicon bulk micromachining technology. A one-to-four power divider with a Si-to-air transition is designed to excite an air-filled cavity antenna array. By properly arranging the four sub arrays, the proposed array is with a checkerboard structure. An in-phase radiating aperture which is...
We realized GaInAsP/SOI hybrid Fabry-Pérot (FP) laser with AlInAs-oxide current confinement structure for PICs on a silicon platform. Using hybrid wafers by a plasma activated bonding technique, an AlInAs layer just above GaInAsP quantum wells was oxidized by wet oxidation. A threshold current of 50 mA and an external differential quantum efficiency of 11%/facet were obtained with the unoxidezed stripe...
In the broad-spectrum of 3D system integration technologies, stacking of die at wafer level is considered a promising and cost effective platform solution for 3D device and 2.5D interposer assembly. The 3D die-to-wafer (D2W) approach consists of a sequence of processes: D2W stacking, wafer-level die encapsulation ("wafer reconstruction") using e.g. wafer-level molding, Wafer thinning, Through...
Here we present the fabrication process for silicon-in-glass electrodes as capacitive transducers. The embedded electrodes are formed by utilizing a glass reflow process. DRIE process easily defines the number and shape of these embedded silicon electrodes. Eight, sixteen, twenty-four electrodes are obtained through this process. These silicon-in-glass electrodes are anticipated to be operated to...
Ultra-wide band ladder filters with bandwidth of 41 to 51%, which fully cover the digital TV band, were fabricated using 0-th shear horizontal (SH0) mode plate wave in a (0°, 117.5–120°, 0°) LiNbO3 (LN) ultra-thin plate. A LN/cavity/Si wafer with a number of devices must be separated into chips as they can be mounted on a printed circuit board (PCB). When the wafer is separated using a dicing machine,...
We present the design, fabrication, and characterization of two multimode waveguide-integrated terahertz (0.75–1.1 THz) resonators. Our first resonator has a size of 250μm × 125μm × 250μm, and our second resonator is a 250μm3 cube. We designed each resonator to be excited through a coupling neck of size 250μm × 10μm × 180μm in a 250μm × 125μm rectangular waveguide. We used a terahertz vector network...
Most terahertz metasurfaces utilise metallic resonators for various functions ranging from filtering, polarisation conversion, modulation, perfect absorption, to beamforming. Here we show that silicon can replace metals to build resonators for similar functions with superior performance. In one case, moderately doped silicon is shown to support terahertz surface plasmon polaritons. Resonant cavities...
The filling process of Through-Silicon Via (TSV) based on printed silver using the Aerosol Jet™ method is presented and discussed. TSVs with different diameters as via-last process in 18 μm ultra-thin ChipFilm™ dies, including a self-aligned etching process and their passivation are demonstrated. Daisy chain test structures on top of ChipFilm™ dies and on the bottom wafer are used for demonstration...
Waveguide coupled Ge photodetector (Ge-PD) is a key component of optical communications and interconnections. Because waveguide coupled Ge-PD requests waveguide and Ge to be at the same height, Ge must grow in selected silicon recess. Thus, obtaining a smooth silicon recess of accurate depth is key to high quality Ge epitaxial growth. The method generally used is wet TMAH etching, but it is difficult...
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