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In this paper, the equivalent circuit model of a pair of TSVs in a passive interposer base is developed, with the nonlinear MOS capacitance effect treated appropriately. Based on the circuit model, the transient analysis of the interposer TSVs is carried out. The results would be helpful for the design and practical applications of interposer-based 2.5-D IC systems.
In this paper, a thick TSV interposer with integrated inductor, micro-strip and coplanar waveguides(CPW) transmission lines on high resistivity Si substrate is presented for 2.5 D integration of RF devices. The electrical interconnection through Si interposer is realized by two individual pieces of holly Cu TSVs of different diameters assembled at the axis. Metallization is realized with a redistribution...
In this paper, high frequency measurement of TSV structures under different DC bias conditions are carried out. The impact of the MOS capacitance effect of TSV on its transmission performance is analyzed. Capacitance and conductance parameters of TSV are extracted and compared with numerical calculations.
3D Integration is a promising technology to continue the trend of Moore's law. However, higher density from die stacking introduces thermal challenges that require more expensive packaging and cooling solutions. An alternative integration technology is interposer-based 2.5D design, which has fewer thermal issues but adds extra interposer cost. Designers must be aware of the system-level cost benefits...
A MEMS active optical element delivers dual axis pointing and scanning with dynamic focus control for a handheld in vivo confocal microscope. This paper describes the design, processing steps and preliminary fabrication results of the new device.
Through silicon via (TSV) based 3DIC has allowed vertical integration of multiple dies for wide I/O configuration. With thousands of TSVs, data transfer rate can be reduced, while maintaining the highest bandwidth compared to the systems in conventional integrated chips and packages. The challenges lie on high yield fabrication process. The trend in dimension of TSV is continuously decreasing, which...
Three-dimensional integration technology is deemed as the most promising alternative in post Moore's Law era. The electrical performance of through silicon vias (TSVs), which are the key enabler for 3D integration, is crucial to modeling and design of 3D systems, especially for high-speed systems. This paper gives a partial review on recent progress in the field with the focus on the high-frequency...
In this paper, the technology of through silicon via (TSV) is applied to radio frequency (RF) receiver module. A grounded coplanar waveguide (GCPW) with TSV is proposed, through the simulation, and the improvement of TSV on RF transmission performance is studied, including TSV's aperture size, density, arrangement and so on. This paper also studies basic components model such as resistance, capacitance...
To alleviate interconnect scaling problem, Network-on-Chip (NoC) has evolved as a standard to design advanced Multiprocessor System-on-Chip (MPSoC). Furthermore, three-dimensional (3D) integration has been proposed recently as an alternative to meet interconnection scaling demands. To design three-dimensional NoC (3D NoC) based systems, the communication channel across vertical direction of an extended...
Open through silicon vias are direct vertical connections between different integration levels of a chip which provide higher performances per unit area in three-dimensional integrated circuits. The reliability of such structures in integrated circuits constitutes an important issue in microelectronics. This paper deals with electromigration reliability and lifetime evaluation of open copper through...
For ultra-fine pitch and high density Cu pillar low temperature bonding (200°C), the surface contact between substrate and Cu pillar array is the key. Therefore, the fabrication quality of copper bump array affects severely the bonding results. The qualitative factors include (1) Cu pillar array height uniformity, (2) free of copper oxide layer, (3) Cu material property (e.g. elastic modulus, grain...
Through silicon vias (TSV) are the enablingcomponents in the emerging 2.5D and 3D integrationmicroelectronic packaging. The insulation layer, i.e. the liner, plays the key role in determining the performance of TSV. Polymer liner are receiving a growing attention for its moresuitable properties and simpler processing compared to thetradition silicon dioxide (SiO2) liner. Recently we reported anovel...
Through silicon vias are key components in 2.5D and 3D microelectronic packaging. Deep silicon etching is the critical step in fabrications of TSVs. Uniform metal-assisted chemical etching (MaCE) has been considered as a promising method to the conventional deep reaction ion etching for deep silicon etching. In this paper, we demonstrated that the uniform MaCE method is capable of fabricating vertical...
A high efficient CMOS class-E power amplifier (PA) by using Quad Flat No-leads (QFN) package combined with Through Silicon Via (TSV) grounding is presented. TSV has much smaller parasitic inductance and resistance than wire-bonds. TSV technology can improve PA efficiency, reduce die size samples and retain low cost in QFN package. The TSV samples are made and measured by using double-side probing...
In recent years, the 2.5D IC (Integrated Circuit) package with TSV (Through Silicon Vias) has become important for high-bandwidth and high-performance applications. It is well known that 2.5D technology requires significant innovation in the areas of process technology, packaging, design, thermals, and test solutions leading to several hundred new technologies in a single product. With these complex...
An ultra-thinning down to 2.6-um using 300-mm 2Gb DRAM wafer has been developed. Effects of Si thickness and Cu contamination at wafer backside in terms of DRAM yield and retention characteristics are described. Total thickness variation (TTV) after thinning was below 1.9-um within 300-mm wafer. A degradation of retention characteristics occurred after thinning down to 2.6-um while no degradation...
Three-dimensional integration with throughsilicon vias is becoming essential for the future of the microand nano-electronics industry. The ability to incorporate multiple wafers and systems in a single design is revolutionizing device packaging. However, the complexity in the fabrication of through-silicon via structures and the reliability concerns must be addressed. In this work the effects of the...
Low cost through silicon via (TSV) technology is a key enabler for the future performance growth of various semiconductor devices. Deep etching and solder filling for TSV through pre-stacked silicon wafers make the TSV process much simpler. Polymer insulator also contributes to stress reduction and conformal insulation. In this paper, we investigate the barrier effect of polymer insulators on metal...
The EMIB dense MCP technology is a new packaging paradigm that provides localized high density interconnects between two or more die on an organic package substrate, opening up new opportunities for heterogeneous on-package integration. This paper provides an overview of EMIB architecture and package capabilities. First, EMIB is compared with other approaches for high density interconnects. Some of...
Driven by the need of reduced energy consumption in devices, 3D integration technology by through silicon via (TSV) attracts increasing interests. However, high thermal stress is induced by the large mismatch of the coefficient of thermal expansion (CTE) among the different materials in TSV. The thermal stress is a serious reliability concern for TSV in 3D integration system. In order to solve the...
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