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In this paper, a TGV interposer based wafer level packaging for inertial MEMS devices is presented. For the TGV interposer, there is a redistribution layer of Al wiring on each side, which are electrically connected with Al metalized TGV. Being as a capping wafer, it's bonded to a MEMS accelerometer wafer based on bulk silicon process with a patterned benzocyclobutene(BCB) layer to achieve wafer level...
In this paper, a novel petaloid hollow Cu interconnection for interposer is presented, its stress can be released by free ends face to hollow Cu interconnection center, and its fabrication process for Si substrate and glass substrate are also presented. Stress distribution and Max. stress of interposer with petaloid hollow Cu interconnection comparison with normal TSV is simulated and analyzed by...
In this paper, a thick TSV interposer with integrated inductor, micro-strip and coplanar waveguides(CPW) transmission lines on high resistivity Si substrate is presented for 2.5 D integration of RF devices. The electrical interconnection through Si interposer is realized by two individual pieces of holly Cu TSVs of different diameters assembled at the axis. Metallization is realized with a redistribution...
Thermal management is a key challenge for TSV (through-silicon-via) enabled integrated three-dimensional microsystem and integrated microchannel cooling is believed as a promising technology because of high inner-chip cooling efficiency. In this paper, a compatible process is presented for integrating microchannel into TSV interposer and three typical types of integrated microchannel are implemented...
In this paper, a novel Si interposer for hermetical MEMS oriented System-in-Package application is presented and it is a low stress, scalable platform with a stress releasing function. It's composed of Si posts which are Air-gapped from Si interposer substituting traditional Copper TSVs to function as electrical interconnection paths, re-distribution layer (RDL) and landing pads for chip stacking...
In this paper, Air-gaped Si interconnection for TSV interposer is presented, it's low stress due to having similar coefficient of thermal expansion with Si interposer and is able to provide free standing pads for stacking dies and therefore is helpful for removing stress accumulation close to stacking dies. Then process is successfully developed for fabrication of Air-gapped Si samples. Finally, stress...
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