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A 4–10 GHz fully-integrated power amplifier (PA) is demonstrated using a 0.15-μm GaAs pHEMT process. This PA employs a compact structure with 4-parallel 3-stacked-FET cells to obtain a broadband power performance within a very small chip size. The measurement results of this PA in the frequency range of 4–10 GHz show a gain flatness of 13.5±1.5 dB, a maximum input return loss (S11) of −9 dB, a maximum...
A broadband monopulse comparator MMIC (Monolithic Microwave Integrated Circuit) based on GaAs process is presented in this Letter. The comparator network constructed by three magic tees and one lumped power divider is proposed for one sum channel and two delta channels. The measurement results show that very wide frequency band from 15 to 30 GHz (66.7% relatively frequency bandwidth) with less than...
In this paper, the technology of through silicon via (TSV) is applied to radio frequency (RF) receiver module. A grounded coplanar waveguide (GCPW) with TSV is proposed, through the simulation, and the improvement of TSV on RF transmission performance is studied, including TSV's aperture size, density, arrangement and so on. This paper also studies basic components model such as resistance, capacitance...
A 3D system-in-package (SiP) module for pakage-on-package (PoP) application base on the commercial multi-layer printed circuit board (PCB) using BT laminated substrate is presented in this paper. To achieve the miniaturized package-level 3D SiP, double-sided SMT process and a stacked interposer as the interconnection of IO signals were selected. One ASIC and three ADC were mounted on the top of the...
A 3D system-in-package (SiP) module for pakage-on-package (PoP) application base on the commercial multi-layer printed circuit board (PCB) using BT laminated substrate is presented in this paper. To achieve the miniaturized package-level 3D SiP, double-sided SMT process and a stacked interposer as the interconnection of IO signals were selected. One ASIC and three ADC were mounted on the top of the...
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