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Titanium dioxide (TiO2) is one of a metal oxide material group that shows a promising future in biosensors application. TiO2 possess both physical and chemical resistant that can extend a device lifespan. However, etching of TiO2 with very high selectivity is a challenging process in achieving good and desired profile particularly in nanometer scale. In this work, we present the anisotropic etch profile...
Excimer laser micromachining enables us to overcome the conventional lithography-based microfabrication limitations and simplify the process of creating three dimensional (3D) microstructures. The objective of these study are to investigate the relation between frequency (f), number of laser pulse (P), fluence (F) and their etch performance. This paper presents a parametric characterization study...
We studied optical properties of thermally annealed Ge-on-Si. From Raman experiments, tensile strain as well as Si-Ge intermixing were investigated. Significant Γ-band transition peak-shift was confirmed by photoluminescence depending on the thermal annealing conditions.
A method of patterning atomic layer deposition (ALD) deposited aluminium oxide dielectrics (Al2O3) using an inkjet printer is outlined. This method has applications in creating PERC cell type rear contacts. It is simpler, and uses fewer chemicals than immersive etching techniques such as those involved in photolithography, and the patterning does not cause damage to the silicon evident in laser ablation...
This paper delves into the electrical characterization of the laser induced damage and in the removal of the damage by the chemical treatment. We believe that an accurate etching removes properly the damage so that there could be more pros than cons that give advantage to this isolating method than the inline expensive wet etching isolating method. For that, a fabrication process is established, which...
In this paper, tiny in-line defects which correlated with chip low yield were investigated. A procedure which has optimum use of FIBs with different function to prepare ultra-thin TEM sample to analyze tiny defects has been proposed, which help prepare overlap free TEM sample in tiny defect analysis process. TEM /EELS /EFTEM have been performed in tiny defect analysis. Two tiny in-line defect cases...
In this paper, particularities of ordered silicon nanopillars (Si NP) arrays formation by mean electron beam lithography and dry etching were studied. The optical and electrical properties of the Si NPs were investigated.
Transmission electron microscopy (TEM) and chemical preferential etching are failure analysis techniques commonly applied to visualize and characterize silicon crystalline defect. Both techniques are applied in this case study of a protected field-effect transistor (FET) that encounter output leakage failure. Upon fault isolation, a complete analysis through TEM and preferential etching using Wright...
The results of experimental investigation of formation features of the 3D boss with embedded V-groove for the optic fber, comprised in optomechanical part of MOEMS photovoltaic pressure sensor are presented. Dependences of ratio change of length of edges <110> and <410> forming underetching compensators of convex corners of the chip have been obtained. To provide good quality of the boss...
By a metal catalytic chemical etching method we obtained “black silicon” with very high absorption efficiency from ultraviolet to near infrared range. The characteristic of the black silicon as absorber for photo-thermal-electricity conversion was investigated.
The structural properties and carrier recombination properties of crystalline defects layer induced by amorphous hydrogenated silicon nitride (SiNx) passivation films plasma chemical vapor deposition (PECVD) process were investigated. A crystalline defects layer existed on the surface of the silicon substrates. The maximum thickness of crystalline defects layer was approximately 50 nm, which was observed...
In this work, a simple solution process (metal-assisted wet chemical etching [MacEtch] method) is used to fabricate high-density silicon nanohole (SiNH) arrays on n-type wafer. SiNH arrays generally produce a large surface-area-to-volume ratio, so that aid for strong light trapping effect between the nanostructures causes high absorption and charge collection via the formation of a core-sheath p-n...
Metal-assisted etching can be used to etch high aspect ratio structures in silicon (Si) wafers. Using Au as catalytic metal, we have developed a simple and robust technique which allows very high aspect ratio structures to be etched on n-type <100> substrates. For example, arrays of hundreds of narrow (10µm) and long (85mm) trenches can be etched completely through a 650µm thick wafer in order...
Silicon semiconductor microstructures have demonstrated enhancement in different types of electronic devices, however, controlling the doping within all these devices remain a major challenge. This challenge is increased by the lack of direct methods to quantify the dopant distribution depth in the microstructures. In this paper we present a method that allows the direct measurement of phosphorus...
NF3/NH3 remote plasmas are used in oxide etch back process prior to the salicide process of word lines (WL) owing to high etch selectivity of silicon oxide over polysilicon. The etch saturation behavior which performs etch stop with a certain period of process time is one of the interesting characteristics during oxide etch process by employing NF3/NH3 remote plasmas. In this study, it is found that...
In this work, the electrochemical etch stop for reverse biases up to 25V at abrupt pn-junctions on 200mm silicon wafers with four and three electrode configuration is investigated. It was found that for such bias conditions across the pn-junction the etch results differ significantly from the prediction of an established model for the electrochemical etch stop under open circuit potential conditions...
In this study, the fabrication of thin porous anodic aluminum oxide (AAO) templates with controllable thickness of 400–1300 nm is demonstrated. One-step anodizing method is used to generate AAO template with hexagonal porous distributed profile. The pore diameter pore-widening and AAO barrier layer thinned down are investigated. The morphologies and pore structures of the fabricated AAO templates...
We present a new type of acoustic resonator technology aimed to undoing the technological locks encountered during the realization of capacitive silicon MEMS resonators exploiting true Bulk Acoustic Wave resonances instead of structural ones. The single-crystal silicon resonators are driven through a combination of a static bias and dynamic voltage applied across a 700 nm-thick electrostatic gap parallel...
In this paper, we report the fabrication process of Through Glass Via (TGV) structure and basic design rules for glass based Three-Dimensional Integrated Circuit (3D-IC) packaging as well as a process flow for glass interposer applications. Quartz glass materials have been widely used in many packaging applications for micro electromechanical systems (MEMS), optical devices, and biomedical chips....
In this study, the anisotropic etching properties of single crystal silicon were examined using the TMAH solution. The effect of IPA additive was also examined. As the THAM concentration (10∼25 wt.%) decreased, the etching rate increased from 10 µm/h to 70 µm/h at temperatures between 70 and 90°C. On the other hand, the etched surface roughness became degraded as the hillock density and corner undercut...
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