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Laser processes in solar cells are the origin of a considerable mechanical and electrical damage. This paper introduces a model that presents a good fitting to the laser-induced damage, previously characterized as an extra recombination diode, with a highly variable ideality factor, connected to the rest of the structure through an interconnecting resistance, determined by the geometry of the damage...
A new tandem structure based on a silicon solar cell is presented. This structure works with two or three junction levels, being the silicon cell in this last case the intermediate cell. The different levels have been interconnected in parallel and for that a greater number of the lower band gap cells would be needed in order to equalize the operating voltage of all the structure. However, the presented...
In this work, design process combines with conventional technology used for selective emitters and Al-BSF (back surface field) which leads to lowly doped and deep emitters focused on low surface doping concentration and moderate sheet resistance emitters. A deep junction for P/Al structure with selective emitter has been achieved. This process runs in oversaturation condition. Surface concentration...
A new approach of a tandem silicon technology is presented. That is based on improving a classical IBC structure in which top and bottom cells are jointed on. The electrical connection of this tandem device is not the classical series connected but the voltage matched approach. The final device would be of a maximum efficiency of 39.5% but it is more tolerant to light spectrum, degradation and not...
This paper delves into the electrical characterization of the laser induced damage and in the removal of the damage by the chemical treatment. We believe that an accurate etching removes properly the damage so that there could be more pros than cons that give advantage to this isolating method than the inline expensive wet etching isolating method. For that, a fabrication process is established, which...
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