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Measurement and simulation of the stress state in the silicon die of a wafer-level fan out package can be difficult due to the complexity of high density packaging structures and the uncertainties in material properties at the nanoscale, yet these stresses directly affect the electrical behavior of the embedded active devices due to the piezoresistive effect in silicon. In this study, the residual...
The solder joint reliability under thermomechanical fatigue is a very strong function of package size and thermal expansion mismatch for a large ceramic leadless chip carrier package (CLCC) with perimeter I/O. If these factors cannot be adjusted, the design space for successful implementation of such a package becomes drastically small. We discuss the reliability improvement methodology where the...
We evaluated anisotropic biaxial strain induced in silicon channel region of metal-oxide-semiconductor field effect transistor (MOSFET) as well as novel channel or source/drain materials such as silicon germanium (SiGe) and germanium tin (GeSn) using liquid-immersion Raman spectroscopy. Uniaxial stress in Si channel region predicted by the simulation was well reproduced by Raman measurement. For the...
The frequency variation of solidly mounted resonators made with AlN thin films operating in longitudinal and shear acoustic modes with induced in plane mechanical strain is presented. The induced deformation range is in the hundreds of microstrains and the frequency variations in the hundreds of kHz, giving coefficients of resonant frequency with deformation in the order of 56% per unit strain. The...
Warpage has become a very critical reliability problem for the advanced electronic packaging technique. One or more chips are stacked on the substrates for a device. The device thus contains materials that have different physical properties. The most prominent problem would be the differences in the thermal expansion coefficient for these materials. During fabrication, thermal energy was applied to...
Aluminium is still one of the most important contact metallisations for power electronic chips like MOSFETs or IGBTs. With a large difference in thermal expansion coefficients (CTEs) between aluminium and silicon and the temperatures generated in hot-spots during high power transients, these layers are prone to failure due to thermo-mechanical fatigue. So far, lifetime modelling was done by subjecting...
With the anticipated slow-down of Moore's Law in the near future, three-dimensional (3D) packaging of microelectronic structures would enable to further increase the integration density required to meet the forecasted demands of future exa-scale computing, cloud computing, big data systems, cognitive computing, mobile communicatoin and other emerging technologies. Through-silicon vias (TSVs) are a...
The interconnection of silicon solar cells is commonly realized by soldering copper ribbons or wires with a solder coating onto screen-printed silver contacts. Due to the difference of the coefficient of thermal expansion (CTE) of copper and silicon, thermomechanical stress is induced after the soldering process during cooling down to room temperature. In the first part of this work, a model is introduced...
Geometric Scaling and high channel doping incorporate loss in mobility. To compensate this, substrate engineering innovations like SOI(Silicon On Insulator) and strained silicon technologies are introduced. In this paper NMOS is designed on Strained Si/relaxed Si0.8Ge0.2 heterostructure using TCAD. Electrical analysis of Strained-Si nMOSFET has been done by the ATLAS 2D simulator using low field Arora...
An overview of material properties and the current state of electronic devices based on 2D layered materials is presented. Atomic scale smoothness, varying band alignment and sizeable bandgaps in the single layer limit make this class of materials very interesting for optoelectronic applications. Scaling effects, doping techniques, contacts and strain engineering of 2D materials are discussed. In...
Promoted by the component miniaturization trend, three-dimensional integration appears as a promising option for implementation of the next generation of integrated circuits. In this context, copper is still an interesting material to be integrated to vertical interconnexion through direct metal-metal bonding processes. However, it was already reported that voiding phenomena occur in bonded copper...
TSV-induced stress is extensively studied in silicon interposer by using two different submicron resolution x-ray diffraction techniques. Simulations are performed to interpret the experimental strain results. Stress and strain in silicon are found to be small at room temperature, while measurements and simulations at annealing temperature (400 °C) support a plastic behavior of copper in some regions...
The design and performance of a strain gauge sensor based on carbon nanotubes (CNTs) has been investigated. A finite element model of the sensor was developed using COMSOL multiphysics. The results were compared to a common metal thin film and silicon strain gauges. The obtained stress response of the CNT based sensor was found to be about 3.6 times higher than that of the standard metal thin film...
In this paper, we propose a vertical super-junction strained-Si channel power MOSFET to improve the breakdown voltage, drain current, threshold voltage, and transconductance. In the proposed structure, a P-pillar forming super-junction with N-drift region is incorporated to get higher blocking voltage due to reduction in electric field inside the drift region. In order to lower the on-resistance,...
A wafer-level fabrication process of polydimethylsiloxane (PDMS) membranes with integrated strain gauges for low-pressure sensing is developed. The device is proposed as an alternative approach and a first step towards a high-throughput platform to electrically monitor the contractility of heart cells on a silicon chip. Titanium strain gauges are successfully integrated on a 12 μm-thick PDMS membrane...
Although cryptography constitutes a considerable part of the overall security architecture for several use cases in embedded systems, cryptographic devices are still vulnerable to the diversity types of side channel attacks. Improvement in performance of Strained Silicon MOSFETs utilizing conventional device scaling has become more complex, because of the amount of physical limitations associated...
The through-silicon via (TSV) technology is widely used in 3D-IC packaging today. After the TSV structure be manufactured, residual tensile stress is occurred in TSV and pull the silicon interposer seriously. Metal-oxide-semiconductor field-effect transistor (MOSFET) around the TSV is affect by pull situation, the mobility of MOSFET is changed. In this study, the influence of TSV residual stress is...
The effects of strain field are studied in Si wafers implanted with heavy iodine and bismuth ions and in multi-quantum well structures. The experimental method of thermally stimulated currents without applied bias is used, and the trapping centres parameters are determined by modelling the discharge curves. In both cases, the strain field produces temperature-dependent parameters of trapping levels...
We report here on sSOI (strained Silicon On Insulator) strain relaxation at a local scale using a simple process based on BOX creep. This method consists in the transfer of SiN strain to a thin silicon layer during a high temperature anneal. This is allowed by the creep of the Buried Oxide (BOX). Thanks to Raman spectroscopy, the induced relaxation in the Si layer is determined. Using a tensile stressed...
The electron spin properties are promising for future spin-driven applications. Silicon, the major material of microelectronics, also appears to be a perfect material for spintronic applications. The peculiarities of the subband structure and details of the spin propagation in ultra-thin silicon films in presence of the spin-orbit interaction and strain are investigated. The application of shear strain...
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