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Optical signal processing applications such as amplification, wavelength conversion and all-optical switching in silicon are usually based on short optical pulses with high peak power because these pulses provide a high peak intensity, which enables nonlinear Kerr interactions while keeping the average optical power small to avoid free carriers absorption [1, 2]. However, short optical pulses may...
The recently introduced concept of photonic phase diagram between metamaterials and photonic crystals allows the design of periodic dielectric structures to be easier. In this paper, we apply inverse dispersion method to build the phase diagram of structures with a frequency dependent dielectric permittivity of their constituents. We show that the phase diagram obtained by means of the inverse dispersion...
Starting with its 50th anniversary in 1992, I have seen 25 years of electron and photon device research at the DRC; let us look over this history and then guess at the future.
High-performance Silicon photonics platform based on an advanced Si CMOS technology is a key to produce low-power integrated photonic chips for the optical interconnect in data transmission. The state-of-the-art Silicon photonics technology has been developed by using 40 nm CMOS technology. Key features are highly reproducible optical devices and high-quality epitaxial growth Ge for photodetectors...
Today, generic foundry silicon photonic platforms use only one waveguide layer, implemented in the top silicon (Si) device layer of a silicon-on-insulator (SOI) wafer. However, very large-scale integrated photonic circuits. comprising of hundreds or even thousands of devices, require complex on-chip optical routing networks that become difficult or impractical to implement using only one Si waveguide...
Luminescence of erbium in silicon has been intensively explored in the past in the high power emission regime, but its employment for manufacturability of active components for silicon photonics proved unfeasible. We explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of ErOx in Si for accessing few photon regime towards single photon emission...
We have fabricated for the first time a monolayer-cored double heterostructure, towards the realization of high-efficiency nanooptoelectronic devices. We prepared a Si/graphene/Si stack by means of graphene-mediated wafer bonding and verified the interfacial mechanical stability and interlayer electrical connection, demonstrating a new application of wafer bonding.
Silicon Photonics is a promising new technology for realizing efficient, high performance interconnects. There is a growing need for educating future engineers on how to design, fabricate, test and package Silicon photonic circuits. Here we demonstrate a Silicon photonic process suitable for an educational institution with i-line lithography capabilities. We have developed a suitable process for realizing...
The double taper-type mode convertor for direct bonded GaInAsP/SOI hybrid photonic devices was proposed and the characteristics of the fabricated structure using plasma activated bonding were measured. The calculated and measured results showed the coupling efficiencies of 90% and 75%, respectively.
In hyperspectral images, for detection of vegetation, vegetation index algorithms has been developed by using reflectance / radiance data in the VNIR (Visible Near Infrared) band. In this aspect, green regions in the image can be detected. In this study, a new vegetation index algorithm is developed for SWIR (Short Wave Infrared) hyperspectral images for the purpose of vegetation detection. The effectiveness...
The Staebler and Wronski light soaking effect [1-3] in hydrogenated amorphous silicon (a-Si:H) results as a worsening of solar cell performances under light soaking which results in a substantial loss of cell power conversion efficiency compared to time zero performance. In this work, comparing the behavior of single a-Si:H p-i-n devices with that of tandem a-Si:H / microcrystalline Si solar cells,...
Laser releasable temporary bond/de-bond (TBDB) materials we recently developed are described. Our laser TBDB materials are composed of two parts: release layer materials and adhesive layer materials. Release layer materials, which are essential for laser TBDB process, are designed to absorb UV laser such as 308 or 355 nm in wavelength. The de-bonding mechanism using such UV laser is based on direct...
Low temperature wafer scale direct bonding technology using plasma activated bonding (PAB) for heterogeneous photonic device integration is reviewed. Nitrogen plasma irradiation in a high vacuum chamber allows tight strength bonding between InP-based and SOI wafers with the bonding temperature of 150°C as well as low damage to GaInAsP quantum wells (QWs). In contrast Argon irradiation cause poor bonding...
Fully depleted thick CCDs have been designed for infrared astronomy, but their low read-out noise of the order of approximately 2 e− and their considerable mass of approximately 5.2 gr, allows novel uses for them in low energy threshold particle detection applications, such as the CONNIE and DAMIC experiments. In both experiments, the neutrinos or WIMPS will generate e-h pairs in a volume much less...
A thin-film tandem solar cell is designed from two different semiconductors in order to observe the impact of thickness of active layers on External Quantum Efficiency (EQE) by keeping the anode voltage fixed for both top and bottom cells. A nearly lattice matched ZnO-Si hetero-structure thin film device has been simulated to get the maximum EQE at a particular wave length. For the anode voltage of...
A silicon-based electrically tunable phase-shifted waveguide Bragg grating to operate as an on-chip signal processor for the implementation of a tunable fractional-order photonic temporal differentiator and an electrically tunable optical delay line is experimentally demonstrated.
The proposed work explains the absorption property of different material which can be used for the formation of Quantum Dot and their use in solar cells. By using property of Intermediate Band Gap of Quantum Dot efficiency of solar cells can also be increased. Along with it, it's found that absorption of Quantum Dot Depends on the angle by which light falls on them and in most of the cases its maximum...
In this article, we determine the elevated temperature of hot carriers in Graphene layer (Tel) in a waveguidefed Graphene FET (GFET) and examine its effect on photo-thermoelectric current that can be sensed at the electrodes of the GFET. Also we introduce an improvement in the Tel and, accordingly, photo-thermoelectric current by adding a second waveguide at the top of the device to produce a coupled...
Multiwall Carbon Nanotube (MWCNT) films were spincoated on Silicon (Si) substrate. The effect of 0.1% and 0.2% solutions of MWCNT incorporation with methanol were investigated. The spincoated MWCNT films were characterized by SEM and UV-VIS-IR spectroscopy. In SEM micrographs, changes were observed in the spincoated films compared to pure Si substrates. Existence of carbon nanowire was also observed...
In this paper, we consider the problem of detection of signals in photon-counting free space optical systems. The underlying hypothesis testing problem is modeled as a goodness-of-fit test (GoFT), and the performance comparison of goodness-of-fit techniques against Poisson count variables are studied. This approach is particularly useful in scenarios where the knowledge of exact statistics of the...
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