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In this manuscript, an artificial immune network was applied to the inverse problem of maximization of complete photonic band gaps in two-dimensional photonic crystals. The computation of dispersion relations in such structures were carried out by means of the MIT Photonic-Bands package. Because of its multimodal searching capability, the artificial immune network could reach similar results, as well...
An integrated tunable MSM PD based on Indium Tin Oxide (ITO) that is fabricated on Si and InP. Tuning is achieved by thermally controlling the bandgap of the semiconductor using a Nickel Chromium (NiCr) microheater.
In this work, p-n homojunction Silicon solar cell with Electron Blocking Layer (EBL) on the top of the surface has been simulated and investigated by using Analysis of Microelectronic and Photonic Structures (AMPS-1D) simulator in respect to overall performance. By changing the thickness of the p-layer and n-layer Si and bandgap of the EBL the optimum performance and efficiency has been investigated...
This work presents a built-in effective body-bias effect (VBS, eff) in ultra-thin-body and BOX (UTBB) hetero-channel MOSFETs. This effect stems from the discrepancies in the electron affinity, the effective density-of-states, and the band-gap between the high-mobility channel and conventional Si channel. Physical VBS, eff models quantifying this effect are presented for nFET and pFET, respectively...
This paper presents a modeling study of III-As materials' band structure obtained with a full-zone 54-band k· p model. This model, extending the 30-band model of Refs. [1], [2], accounts for (220) bands and allows a better description of the band structure in the vicinity of the K point [2]. The band gaps and effective masses derived from the band structure are compared with values obtained from other...
After the golden era of silicon, nowadays compound semiconductors from III-V group is extensively studied to observe their application in electronic as well as in other field. Solar cell which is providing alternative source in our industries, houses and laboratories. Researchers are now trying to find out new features by using these inorganic materials based solar cell which can easily be paved the...
In our research work electrical characterization with different generation of solar cells depending upon the emergence as- First Generation: Mono and Poly-crystalline Silicon, Second Generation: Thin-film Solar Cell, Third Generation: Full Spectrum Utilization with comparative efficiency study of different solar cells is investigated. Besides, major part of our research is Multi-Junction Solar Cells...
The effect of Mg-doping on the valence and conduction bands of ZnO grown at 200 °C using atomic layer deposition has been investigated using a range of physical characterization techniques: X-ray photoemission spectroscopy, inverse photoemission spectroscopy and spectrocopic ellipsometry. The conduction band minimum is seen to increase with Mg content hence confirming the increased band gap. The physical...
An open boundary-conditions full-band quantum transport formalism with a plane-wave basis based on empirical pseudopotentials is used to self-consistently simulate transistors in the sub-1 nm technology node, with one-dimensional silicon nanowires, armchair-edge graphene nanoribbons, and zigzag-edge carbon nanotubes as the channel. The electrostatic potential energy and charge density distribution...
In this work, an efficient method is applied to calculate the miniband structure and density of states for well-ordered Ge/Si quantum dot (QD) array fabricated by combining the self-assemble bio-template and damage-free neutral beam etching. Within the envelop-function framework, this computational model surmounts theoretical approximations of the multi-dimensional Kronig-Penney method and the numerical...
Interface morphology dependent Schottky Barrier Height (SBH) and its modulation by substitutional dopants in NiSi2/Si interface have been investigated using density functional theory. An accurate band gap of Si was estimated by employing meta-GGA exchange correlation functional. We show that the SBH for electrons (in n-type semiconductor) is significantly lower for (001) than (111) orientation of...
The ability to transfer electrons from valence to conduction band states in a semiconductor is the basis of modern electronics. Here, attosecond spectroscopy is used to resolve this process in real-time. The excitation of electrons across the band-gap of silicon by few-cycle laser pulses is found to induce lasting modifications of the XUV absorbance spectrum in steps synchronized with the laser electric...
Temperature-dependent electroluminescence from a double heterostructure n-Ge/i-Ge0.94Sn0.06/p-Ge LED was studied. The peak position of EL spectra showed a blue-shift as the temperature decreased. A maximum emission power of 7 mW was obtained under the current density of 800 A/cm2.
The interfacial region between a base matrix and nanoparticles in nanocomposite dielectrics is often referred to as the main cause of good performance of nanocomposites as insulating materials. In the present work we compare electronic structure of the interfacial region in the polyethylene magnesium oxide nanocomposite with the electronic structures of its bulk constituents. The calculations were...
We present pseudo-single-crystal, direct band gap GeSn gain media fabricated at <450 °C on dielectric layers towards monolithic 3D photonic integration. A high transient optical gain ∼5000 cm−1 has been at λ=2100–2200 nm at 300K.
Tensile strain of Ge-on-Si with post-growth annealing was analyzed using micro-Raman for optical sources in interconnection system. Tensile Stain in epi-Ge distributed non-linearly with SiGe alloy formation at the interface after annealing.
Photovoltaic cell conversion efficiencies for quasi-monochromatic radiation have been measured as a function of the wavelength. It has been proven that the conversion efficiency is nearly proportional to the wavelength of the input radiation as the theory predicts. Also, it has been shown that the efficiency increases as a logarithmic function of the input irradiance. In conclusion, highest conversion...
We present a new, CMOS-compatible platform for inducing a large, spatially homogeneous biaxial strain in Ge microdisks. This platform can deliver substantial performance improvements to biaxially strained Ge lasers for silicon-compatible optical interconnects.
In this work we have fabricated inorganic Silicon solar cells coated by a thin layer of Al-doped ZnO (ZnO:Al). Planar solar cells were fabricated by spin on dopant diffusion method. Thin layers of ZnO:Al were deposited by Atomic Layer Deposition method at different temperatures and ZnO/Al ratios. As a result of the deposition of a large bandgap material on top of the sample, it was found that both...
Two applications of the Green's expression for saturation current vs. bandgap are proposed. The first one aims at assessing the energy bandgap, Eg, in the quasi-neutral regions (QNR) of Si and CIGS solar cells, which is associated to the saturation current in those regions, J0,QNR. Values for J0,QNR are obtained from both fits to pseudo-dark I-V curves and the textbook expression for open-circuit...
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