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Bonding conditions and characteristics of N2-plasma activated bonding for GaInAsP/SOI hybrid lasers are explained. SEM and TEM images reveal high quality bonding interface and less damage quantum wells, which are enough to realize hybrid lasers.
A method for fabrication of VeSFETs, three-dimensional fin-type MOS transistors is presented. The VeSTIC process was developed and experimentally implemented in ITE. The test devics were manufactured, and their electrical characteristics were measured. Methods for extraction of a set of the VeSFET physical parameters are proposed based on the device compact model. The flat-band voltage, mobility and...
This work includes design of microwave plasma source, ICP chamber, laser scribing trials, development of the water soluble mask material and DRIE process. Electron cyclotron resonance (ECR) plasma sources are used for a variety of materials processing applications such as semiconductor etching and deposition. ECR sources has several advantages over reactive ion etchers (RIE) commonly used since the...
Deep Reactive Ion Etching (DRIE) has revolutionized a wide variety of advanced package applications. Cavity etch process is an important step for fan-out wafer level package (WLP), which general fabrication by DRIE. In this paper, we investigated the influence of process parameter on the profile and etch rate in square-hole cavity etch. Sidewall angle was controlled by fluorine isotropic etch. So...
Leading-edge technology integration, high-bandwidth and low-power data access call for vertical stacking of semiconductor devices with very fine pitch interconnects. To address this demand, a unique technology referred to as Direct Bond Interconnect (DBI®) which was invented by Ziptronix [1] is being further developed for die to wafer applications. By joining the dielectric regions and the metal interconnect...
An inductively-coupled plasma-reactive ion etching system (ICP-RIE) for a half-inch wafer process is developed. The machine is in human-size and supporting clean-localized manufacturing system of minimal fab. A tiny chamber with a volume of 1/41 enhances performance of gas-replacement inside the etching chamber. The gas switching time between etching and polymeric passivation for a Bosch process at...
We report an advanced deep-reactive-ion-etching (DRIE) process developed specifically for etching ultra-deep structures in thick (>500μΉ) silicon wafers with high aspect-ratio and straight sidewalls across a wide range of feature sizes and patterns. This is achieved by ramping critical process parameters throughout the etching duration. 600–800μm deep trenches with widths as small as 20–40μm are...
In this study, we investigated the plasma-induced damage in silicon trench etching. The damage was measured by detecting the dark current, which was a very small leakage current thermally generated from silicon crystal defects. The results indicated that both the amount and depth of the sidewall damage in the trenches were almost the same as those of the bottom damage. From the results of analysis...
One of the key challenges in embedded memory solutions is yield degradation due to additional thermal budget in the process. In this work, we report STI HDP-CVD (Shallow Trench Isolation High-Density Plasma Chemical Vapor Deposition) process as a key contribution factor to yield degradation in embedded memory devices by causing higher degree of silicon dislocations. With optimized plasma sputter/deposition...
For the realization of the IoT (Internet of Things) society where the arrival is strongly predicted soon, the construction of an intelligent sensor network is important. For such a sensor network construction, the enormous numerical fusion devices that CMOS devices and MEMS sensors are integrated are essential. To develop WLCSP (Wafer Level Chip Size Packaging) technologies as high density packaging...
A method proposed to effectively hoist the power conversion efficiency (PCE) in single crystalline solar cells (SCS) is feasible. In the approach, the optimization of etched depth to reduce reflection of sunlight and the maximization of surface area of wafer to increase current absorption were performed by plasma enhanced chemical vapor deposition (PECVD). Results obtained by a standard testing equipment...
Amorphous silicon (a-Si:H) thin-films being an advantageous base for solar cells manufacturing face several disadvantages, such as relatively wide bandgap (1.7… 1.8 eV) and cells degradation effect during prolonged sun exposure (Staebler-Wronski Effect) that lowers the efficiency of the cells compared to, for instance, monocrystalline solar cells. We suggest enhancing the solar cell conversion efficiency...
C-V measurement is an efficient method to determine the active doping concentration in silicon. In this study, we use it in the aim to understand the mechanisms which govern the phosphorus deactivation by hydrogen. To do this, The hydrogenation experiments were carried out in hydrogen plasma generated in an electron cyclotron resonance system (MW-ECR) using microwave power (PMW) for a fixed parameters...
Rapid Alternating Process (RAP) is a series of alternating polymer deposition and Si etch cycles, each lasting only 0.2~0.9sec to suppress sidewall scallops for through silicon via (TSV) application. This paper proposes depositing the nitrided fluorocarbon (N-CxFy) polymer as sidewall passivation film to eliminate the undercut damage of silicon substrate. RIE-lag effect is observed as shrinking the...
We have applied the terahertz (THz) time-domain spectroscopy (TDS) to revealing the mechanism of the relativistic Doppler reflection of the THz light from a photo-induced plasma layer in a silicon wafer. The velocity of moving plasma layer is estimated by the reflected THz waveforms as a function of pump and probe delay time. We found that the interaction time of the moving plasma front and the reflected...
As CMOS device scaling approaches to sub 10-nm node, quantum size effects become significant even at room temperature. Recent progress in the fabrication technology of silicon nanostructures has made possible observations of novel electrical and optical properties of silicon quantum dots, such as single electron tunneling, ballistic transport, visible photoluminescence and electron emission. Possible...
At high switching speeds silicon pin-diodes can show a significant forward recovery voltage, which appears as a reverse voltage over the anti-parallel IGBT. The avalanche breakdown of the IGBT floods its base-region with electron-hole-plasma, which is extracted when the diode is turned-off again after a while and contributes to the diode's reverse recovery peak. This effect increases the losses and...
SiF4 PLAD has been systematically characterized and optimized. The correlations between the etching, deposition, retained F dose and profile as functions of the PLAD process variables including implant voltage, RF power, pressure, pulse duty cycle, and the diluting gases have been extensively investigated. It was found that PLAD process by using pure SiF4 is in an etching or RIE regime, but can be...
Advanced inductively coupled plasma techniques and surface treatments have been used to demonstrate 5 nm conformal shallow junctions at low energy with no silicon structure damage. N-type PH3 plasma-assisted doping was characterized by dopant diffusion and electrical activation with increasing wafer temperature. Plasma-assisted doping at high wafer temperature showed no structure damage even at a...
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