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In this work, the authors investigate the effect of hydrogenated amorphous Si (a-Si:H) layers on oriented CdZnTe on leakage current and the gamma detection response.
This paper presents very-low-voltage (VLV) testing for digital NMOS circuits based on amorphous silicon thin film transistor (a-Si TFT) technology. The proposed VLV testing is an economic alternative to burn-in because the former is non-destructive and can be easily performed on regular ATE in a short time. 140 circuits under test (CUT) of two different design styles are implemented in 8 mm a-Si TFT...
Amorphous carbon (a-C) thin films were deposited on silicon (Si) substrate by pyrolysing camphor oil at various temperatures with thermal chemical vapor deposition (CVD) technique. The deposited a-C thin films were characterized by Current-Voltage (I-V) Measurement and UV-VIS-NIR Spectrophotometer. The electrical and optical properties of these films have been studied. It was found that increasing...
P-type amorphous silicon was deposited on crystalline n-type silicon substrates to obtain hetero-junction diodes. Additionally, a thin intrinsic amorphous silicon layer was inserted between both the p-type film and the n-type substrate to study its passivation effect on the c-Si surface. We studied the influence of the quality of the amorphous films upon the performance of the hetero-junction diodes...
A highly sensitive photo-detector array deposited on a glass substrate with an optional integrated optical filter have been presented. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less than 1 e-10 A/cm2 for -3V polarization and a maximal quantum efficiency of 80% near 580 nm. The prototype was encapsulated and successfully tested...
The electrical properties of InxGa1-xAs (x=0.53, x=0.65) MOSFETs have been studied for three different ex-situ surface passivation techniques (HF clean, (NH4)2S clean and PECVD a-Si interlayer) with HfO2 gate dielectric (4 nm and 8 nm) and Ni/Au gate metal. In0.65Ga0.35As devices demonstrate much higher drive current than In0.53Ga0.47As devices. Devices with an a-Si IPL exhibit the highest drive current...
We report on the fabrication, structural and optical properties of Er doped amorphous silicon nitride. The effect of excess Si on the sensitization of the 1.54 mum Er emission will be discussed.
Solar PV battery charging was tested by using crystalline and amorphous silicon PV modules to recharge lithium-ion battery strings. The iron phosphate type batteries were charged to their maximum capacity with optimum efficiency while avoiding thermal hazards associated with overcharging due to the self-regulating design of the solar charging system.
We report a CMOS-compatible low-temperature process for electrostatic MEMS scanner with highly reflective photonic crystal mirror in the near IR region. The photonic crystal was made in the EB-evaporated amorphous silicon layer deposited on the MEMS scanner. The reflectivity was found over 90 % at 1.55 mum wavelength. Mechanical angle displacement of 6 degree was obtained with an applied voltage of...
The hydrogenated amorphous silicon (a-Si:H) Alms on molybdenum coated glass substrates were microstructured by irradiating the films using KrF excimer laser with a slope beam profile. By varying the laser processing parameters i.e., the laser pulse energy, the number of laser pulses and the laser energy distribution along the sample scan directions, the homogeneous, high density, and conical polycrystalline...
Hydrogenated silicon (Si:H) thin films were deposited at a selected argon diluting ratio under varied RF power density and the influence of it on nanocrystallization was studied by XRD, FTIR and Raman spectroscopy.
The structure of hydrogenated amorphous silicon (a-Si:H) thin films embedded with nano-crystal grains deposited by conventional radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) through decomposition of silane diluted with argon has been studied by X-ray diffraction (XRD), Fourier transform infrared (FTIR) and Raman spectroscopy. It is observed that argon as dilution gas plays...
Silicon photonics is a rapidly advancing technology. Silicon based slot-waveguides for high optical mode confinement of quasi-TE (vertical slot) and quasi-TM (horizontal slot) mode have been demonstrated independently. These structures are highly birefringent, which limits their usability in photonic devices. A nonbirefringent structure based on slot waveguide is proposed in this paper. The intensity...
In this work we present an amorphous silicon/amorphous silicon carbide balanced photodiode structure suitable for differential photocurrent measurements in the ultraviolet (UV) and visible range. The device is a three-terminal structure constituted by two series-connected amorphous silicon p-i-n photodiodes. The structure takes advantage of the differential measurement to reveal very small variations...
A technological approach for the fabrication of large area hybrid detectors is presented. The proposed hybrid detector consists in an array of hydrogenated amorphous silicon photodiodes directly connected to a CMOS readout chip, which is vertically integrated over the sensor array using flip-chip bonding. In particular, the proposed solution relies on a stack of interconnection layers, deposited on...
The authors have examined the influence of the amorphous layer on sheet resistance (Rs) utilizing B18HX+ and its dimer implantation. Because of partial decomposition of B18H22 in an ion source chamber, the extracted ion beam consists of a lot of kinds of B18HX+ ions. In addition, as a result of polymerization, the dimer of B18HX+ ions are also included. Deeper amorphization is expected for the...
The hydrogenated amorphous silicon a-Si:H films were grown by plasma-enhanced chemical vapor deposition (PECVD) using liquid cyclohexasilane Si6H12 (CHS). The growth rate of a-Si:H was studied as a function of substrate temperatures in the range of 30 ??C<T<450??C using deposition conditions that were optimized for monosilane SiH4. The same parameters were used for a- Si:H films grown using...
Based on Crosslight APSYS, amorphous Si (aSi:H)/amorphous SiGe:H (a-SiGe:H)/microcrystalline (??c-Si) thin film triple junction solar cells are modeled. Basic physical quantities like band diagrams, optical absorption and generation are obtained. Quantum efficiency and l-V curves for individual junctions are presented for current matching analyses. The whole TJ cell I-V curves are also presented and...
Fabrication of solar cells on cheap plastics, due to its demand for a low temperature processing (~100?C) needs adaptation of the cell structure of the state-of-the-art high efficiency thin film silicon solar cells made at high temperature (200?C). Use of a double n-layer (n-?c-Si/n-a-Si) instead of a single n-?c-Si layer improves Voc from a low 0.66 V to 0.82 V in the as deposited state of an n-i-p...
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