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The technique for precise control of the composition of in-situ heteroepitaxial layers cadmium-zinc-tellurium (CZT) by the spectral ellipsometry method is proposed. Various features of spectrum of triple compound of CZT are considered. Special attention is paid to the spectrum parts close to the critical points E0, E0+Delta0, E1 and E1+Delta1. The dependence of energy location of fundamental absorption...
Series of nanopowder were manufactured, for which peak was observed in Raman's spectrum. That peak corresponds to Raman scattering on monocrystalline silicon. In photoluminescence spectra broad peaks were observed. That peaks covers range from red to blue. MOS-structures with nanoballs incrusted in SiO2 were manufactured. For those structures, differential Voltage-Capacity (C-V) and Conductivity characteristics...
It was shown with the use of 2D-simulation of the model diodes, that the premature breakdown caused by the positive charge build in the oxide may be initiated at least by two factors-the punch-through and/or the premature avalanch multiplication of carriers near the surface of the device. At given voltage and given oxide charge the simple design rule may be fomulated-the distance in the planar plain...
This work is devoted to the development of method for determination of life time and surface recombination rate in epitaxial layers of indium arsenide. The determination of relaxation parameters is based on modeling of nonequilibrium charge carriers recombination process under pulse laser exposure of semiconductor film surface and comparison of simulated and experimental curves of photoconductivity...
Neural net analysis is tested as a tool for prediction of acentricity of crystal structure. A set of input parameters is defined that gives the prediction with as high probability as ~80%. The neural net is used for prediction of new binary acentric molybdates.
Quantitative relation has been defined that relate long-wavelength and short-wavelength limits of a crystal with its mean refractive index. The long-wavelength and short-wavelength limits have been predicted for a set of binary oxide crystals which crystal structure is known. The compounds promising for pronounced spectral parameters have been selected.
In this paper aspects of device simulation of digital elements have been reviewed. Theoretical and practical aspects of noise modeling in integrated circuits substrate have been discussed.
The basic physico-technological principles of creating a perfect interface in MIS structures on InSb and InAs, and fabrication of IR-photodetectors, functioning under non-equilibrium depletion mode, on their base are formulated in the present contribution.
Thin films of (HfO2)x(Al2O3)1-x alloys were prepared by chemical vapor deposition using the volatile coordination compounds. Amorphous structure of the films has been revealed by X-ray analysis when the Al content is of >30%. It was shown by EDS and XPS that Al concentration increases with rising the substrate temperature and content of the Al(acac)3 in mixture of the precursors. Formation of (HfO...
Kinetics of quantum dots (QDs) formation in droplet epitaxy is investigated. Optimal growth parameter values are specified for deposited indium amount and growth interruption. It is shown that droplet epitaxy allows to decrease QDs density by an order of magnitude and get spectrum red-shift in comparison with Stranski-Krastanov method. As it follows from spectra analysis, growth interruption increase...
The indium drops formation on GaAs as initial stage of droplet epitaxy was investigated. The drop density of 5ldr107 cm-2 allows to produce low-density quantum dots. Well-defined bimodal character of height distribution is revealed. We suppose that additional nucleation centers appeared on the surface during indium deposition time. They are supposed to be surface defects caused by arsenic evaporation...
In given work the method for growing the AlN layers on sapphire substrate with MBE method from ammonia is considered. An influence of growth conditions on quality of obtaining layers is investigated.
The purpose of the given work is carrying out and research polymerase chain reaction of a deoxyribonucleic acid (PCR) by capacitor spectrometry method. Research of polymerase chain reaction is planned to spend by capacitance sensor with nanoporous insulator for measurement of dielectric permeability of a liquid. As medium between electrodes of condenser structure it is used nanoporous silicon dioxide...
1-D model of doping diffusion in silicon from limited source on planar and non-planar side of silicon substrate with taking into attention the segregation of doping on the interface with blocking oxide is developed. A conditions for controlling the parameters of profiles in the depth of the silicon substrate is defined.
Structural and morphological transformations of an atomically clean Si(111) surface at initial stages of copper deposition were studied by in situ ultrahighvacuum reflection electron microscopy. The monatomic steps motion in the step-down direction and the change of the electron microscopy contrast along atomic steps were observed during the submonolayer copper deposition onto the substrate at 850degC...
Results of X-ray photoelectron spectroscopy and reflection high-energy electron diffraction of process of GaAs-Ge heterointerface formation under condition of incomplete removal of inherent oxide from GaAs substrate are presented. It was shown that deposition of Ge at the stage of lacunas formation prevents stoichiometric As evaporation from the substrate surface and Ga enrichment. Results of Hall...
Kinetics of two dimensional islands on Si(111) was investigated by in situ ultrahighvacuum reflection electron microscopy during sublimation. The temperature dependences of critical radius of the terrace for nucleation of new island were measured. On the base of the obtained data the adatom diffusion length on the Si(111) surface was estimated at temperature range 1000 - 1300degC.
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