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Compact Thermal Models (CTMs) are now in use for more than 10 years. We have come a long way since the first introduction of the CTMs half way the nineties [1] [2]. This paper will give an overview of problems that still existed from the moment CTMs were introduced, how they were solved, and what must be done to make better use of this technology
High performance 3D TSV interconnects are important for reliability, choice of the filler material is also a critical issue as thermal incompatibility, electromigration and, high resistivity are still a bottleneck. In this paper, SW-CNT bundles as a prospective filler material for TSV are investigated compared to conventional filler materials like Cu, W, and poly-silicon. It is found that SW-CNT bundles...
A suitable for high frequency applications with gallium nitride high-electron-mobility transistor overcurrent protection (OCP) circuit has been put forward. The proposed circuit depends on the detection of the drain-source voltage of GaN HEMT to judge the overcurrent fault, then turn off the GaN HEMT rapidly and send a fault signal to the microprocessor in the switching period which the overcurrent...
Due to mismatch in the coefficients of thermal expansion of silicon and copper, mechanical stresses in surrounding silicon are induced near TSV in 3D ICs. In this paper, the mobility variance of substrate material caused by TSV-induced stress is researched. Firstly the semi-analytical model for TSV-induced stress distribution is introduced. An analytical model for TSV-induced stress distribution is...
In this paper, influences of the initial stress on the surface micromachining silicon nitride pressure sensor was analyzed and discussed. The residual stress in the diaphragm is a major issue that makes significant difference on the performance of surface micro machined pressure sensors, such as warpage, micro-cracking, delamination, debonding, and nonuniform stress profile of the membrane. The pressure...
A band-pass-filter (BPF) based on silicon substrate was designed and simulated. Different software was applied to design and simulate the character of the filter. A three-order filter was designed dedicating to range 2.4 GHz-2.5 GHz use. The ideal topology circuit was designed with passive inductors and capacitors. Moreover, the integrated passive devices (IPDs) were modeled and simulated with thin...
With the increasing density of transistors in advanced technology nodes, the radiation is an ongoing problem affecting the contents of memory cells. This paper presents the simulation results of radiation immunity for two different memory cell technologies: 32nm Bulk CMOS and 28nm FDSOI. The effect of Single-Event Upset (SEU) caused by the heavy ion impact with different Linear Energy Transfer characteristic...
With the development of the integrated circuits, the electronic devices become smaller and smaller, higher density within, and more and more function. The through silicon via (TSV) is the core to the three-dimensional integrated circuit. This paper focuses on the effect to the transmission characteristic of the Ground-Signal-Ground (GSG) TSV. Effects of design parameters, co-simulation with CPW, equivalent...
Through silicon via (TSV) is the critical structure for three dimensional package technology, which provides vertical interconnections between stacking dies and interposers. However, for TSVs, there are still some reliability problems and metal core warming of TSVs is involved in most of the causes. Thus, accurate and efficient thermal modeling methods describing and quantifying metal core warming...
A full wave modelling approach based on authors' previous work is improved to model DC blocking capacitor. By correlating to the measurement data, it is shown that the modelling approach is accurate. A methodology of developing equivalent capacitor model for signal integrity simulation is proposed to improve simulation efficiency. In order to mitigate the impact from DC blocking capacitor, voiding...
We implement and verify Si micro-ring modulator (MRM) behavioral model based on the dynamic coupled-mode theory. We also perform circuit-level simulation of the entire Si photonic transmitter including the driver electronics and the Si MRM.
Electrical modeling of through silicon via (TSV) is very important for three dimensional (3D) system design and analysis. In this paper, we present our study on the impact of sidewall roughness on the TSV electrical performance in the ultra-broad band range. Our analysis shows that the root mean square height of the rough sidewall is comparable to the skin depth in extremely high frequency (> 20G...
In this paper, a method for signal integrity (SI) analysis based on computed tomography (CT) scans is proposed. SI analysis based on state-of-the-art measurements can be difficult to perform if the structures of interest are on inner layers of multi-layer boards, are enclosed by IC packages or if appropriate contacts for measurements cannot be provided due to cost and space reasons. In contrast to...
Although path-delay faults (PDF) have been studied extensively during the last three decades, design of combinational circuits to achieve low-overhead robust PDF testability, still poses many challenges. In this paper, we revisit the problem of synthesizing a robust path-delay fault testable combinational circuit based on certain new functional properties. Given the boolean cubes of a function, we...
For scaled MOSFET devices, normal operation of devices is seriously affected due to static gate tunneling leakage currents with ultra-thin gate oxide of MOSFET, and the novel MOSFET devices based on strained Si are similar to bulk Si devices in the effects. To illustrate the impacts of gate leakage current on performances of novel strained Si devices, a theoretical gate tunneling currents predicting...
Measuring head impacts in helmeted sports is important for prognosticating onset of mild traumatic brain injuries (MTBIs) or concussions. In this paper we present a miniature battery-less, self-powered sensor that can be embedded inside sport helmets and can continuously monitor and log the statistics of different levels of helmet impacts. At the core of the proposed sensor is a novel time-dilation...
Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation,...
We present an analogue Very Large Scale Integration (aVLSI) implementation that uses first-order log-domain low-pass filters to implement a generalised conductance-based silicon neuron. It consists of a single synapse, which is capable of linearly summing both the excitatory and inhibitory post-synaptic currents (EPSC and IPSC) generated by the spikes arriving from different sources, a soma with a...
We demonstrate in this paper that it is possible to operate a certain bipolar transistor as an amplifier using only the emitter and base without using the collector. This study was performed based on the novel hypothesis that the bipolar transistor works by the internal photovoltaic effect.
This paper presents the design and characterization of a piezoelectrically-transduced (AlN) on silicon micro-mechanical resonator operating in its lateral bulk acoustic width-extensional mode at 28.73 MHz. The equivalent m-BVD model of the resonator is extracted using a least-squares-error algorithm which is presented in this paper. We report a mechanical Q factor of 5970 and motional resistance Rx...
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