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For the first time, this paper investigates anodic bonding using the latest chemically-strengthened glass called Gorilla Glass (from Corning). Gorilla Glass has many excellent properties for MEMS/NEMS applications, including hardness (resistance to scratching), flexibility, high fracture toughness and antibacterial resistance. However, the high thermal expansion coefficient of Gorilla Glass (7.58ppm/°C)...
In this paper a compact model for intrinsic capacitances for Tunnel field-effect transistors (TFETs) is presented. The model is derived from the carrier concentration and current flowing the channel of a Si Double-Gate (DG) n-type TFET. It represents a particularly good estimation of TFET capacitances and the flexibility of this model makes it possible to apply it for single-gate or p-type TFETs as...
The benefits of a modular, tailored system-level modeling approach, which combines lumped with distributed models, are demonstrated for an industrial capacitive silicon microphone. The performance of such microphones is determined by distributed effects like viscous damping and inhomogeneous capacitance variation across the membrane as well as by system-level phenomena like package-induced acoustic...
The most notorious faults for diagnosis in post-silicon validation are those that manifest themselves in a non-deterministic manner with system-level functional tests, where errors randomly appear from time to time even when applying the same workloads. In this work, we propose a novel diagnostic framework that resorts to dual-modular redundancy (DMR) for troubleshooting non-deterministic faults,...
The downscaling in VLSI systems and the use of new materials influences the reliability of components in terms of radiation more and more. The unavoidable presence of particle radiation on ground and in space leads to unwanted failures in the electronic devices. Concerning packaging materials, design and technology a lot of steps were done to avoid radiation sensitivity. Nowadays microelectronic for...
In this paper, a new approach has been presented for evaluation of the impulse circuit parameters from known physical parameters (rise or peak time and tail time) using Nelder-Mead algorithm (NMA). Results of second order impulse circuit parameters such as C1, C2, R1, and R2 are reported for generating lightning impulse (LI) and switching impulse (SI) as given in standards (IEEE 4-2013 and IEC 60060-1)...
Fully Depleted Silicon-On-Insulator (FDSOI) devices have been shown to have a superior resilience to radiation effects. In this work an analysis of the 28nm FDSOI resilience to heavy-ion impacts is undertaken at different temperature and buried oxide (BOX) thickness using TCAD tools. The results show that BOX thickness variation has a low impact on the collected charge (CC) produced by the heavy ion...
Recent studies show that increasing numbers of design bugs are escaping to post-silicon due to the complexity of advanced designs and the lack of adequate verification tools that can validate complex electrical interactions between electrical subsystems on an integrated circuit. In this paper, we present a novel tool for post-silicon validation of mixed-signal/RF circuits through cooperative test...
A thin-film tandem solar cell is designed from two different semiconductors in order to observe the impact of thickness of active layers on External Quantum Efficiency (EQE) by keeping the anode voltage fixed for both top and bottom cells. A nearly lattice matched ZnO-Si hetero-structure thin film device has been simulated to get the maximum EQE at a particular wave length. For the anode voltage of...
Feature sizes of advanced commercial electronic devices are now smaller than the mean free path of the electron collisions with impurities and lattice vibrations. This completely changes the physics of the electron transport. The effective field effect mobility becomes proportional to the device length because the electrons lose their drift momentum in the contacts. The high frequency impedance is...
A pure and high-frequency clock reference will benefit the radar transceivers, helping on generating superior chirp signals. Revealed by recent literatures, Lamb-wave resonator is a candidate to provide such a reference. However, reported equivalent-circuit models of Lamb wave resonators are not accurate enough to enable the designs of integrated circuits. This paper discusses necessities of high-frequency...
A discrete matrix amplifier with two rows and four columns (2 by 4) designed to cover all the wireless protocols such as 2G, 3G, LTE, Wi-Fi (2.4 GHz and 5GHz), Bluetooth, Zigbee for SDR application designed with Silicon BJT and E-pHEMT technology. It exhibits an average pass-band gain of 38dB across 650MHz to 5.8GHz which is highest in the state of the art.
Simultaneous switching noise (SSN) occurs when clock synchronized core circuits switch simultaneously. Furthermore, a huge amount of the SSN generated by simultaneous switching current (SSC) with high power distribution network (PDN) impedance at anti-resonance can cause electromagnetic interference (EMI) problems and logic failure. In multi-core processors, the spectrum of SSC is varied by power...
High speed interfaces in traditional Printed Circuit Board based systems are based on serial data communication circuits. Serializing and deserializing circuitries are used on two ends of the chips communicating with each other. The channel can be either between modules over a Backplane, between chip packages on PCB or between dies on an interposer. Backplane and PCB based serial communication has...
A segmented and unsegmented 3D insulated copper through silicon vias (TSVs) of diameter 10μm, height 100μm and silicon of sizes 100μm by 100μm by 100μm are modelled using analysis system (ANSYS) and equivalent circuit using advanced design system (ADS) at frequency ranges between 100MHz and 20GHz at 10MHz step sizes. The segmented via is divided into three parts; part 1, part 2 and part 3. Each part...
The problem of Influence Maximization (IM) on social networks proposed firstly by Kempe et al. (2003) has been researched and developed with many cases. However, the IM in limited time while unwanted users are restricted is still a new potential subject. In this paper, we conducted the research over model of information diffusion named Locally Bounded Diffusion and tested some useful heuristic algorithms...
Modeling the 3-D capacitances of FinFET devices, shown in Figure 1 [1], accurately is critical for the continuing scaling of CMOS nodes. Without accurate capacitance and process variation modeling, the yield of advanced nanometer CMOS nodes will decease due to high timing mismatch. In this paper, we propose a new process variation based characterization to enable R&D engineers to identify critical...
For enhancing spectrum efficiency, in-band full-duplex technology is one of the candidate technical solution. But, self-interference (SI) signal causes dramatically degrade the performance. In practically, memory effect which cause harmonic in amplifier will be hard to be estimated. Therefore, we utilizes the dynamic regression (DR) to implement digital interference cancellation (DIC) for mitigate...
This paper deals with high-speed serial system design methodology and measurement when designing microserver backplane system which consists many high-speed point-to-point serial protocols. A microserver is very small form factors compare with a standard rack mount server. Therefore it is required more intensive design for microserver backplane. This paper deals with signal integrity analysis about...
A RF leakage phenomenon in GaN HEMTs on Si substrates is analyzed with taking atomic diffusion at buffer/substrate interface into consideration, and a novel physical model of RF leakage based on the analysis is proposed. The Al or Ga atoms are moved from buffer layer to Si substrate at an epitaxial growth. Then, an acceptor layer with high hole density and an inversion layer with high electron density...
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