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A fully integrated K-band power amplifier is designed and fabricated in 0.18-µm CMOS technology in this paper. The conventional cascode power amplifier benefits from high gain and output power, but the efficiency is not well discussed before. In this study, the voltage variation and the large-signal performance of cascode PA are analyzed, and the new design strategy for the optimal bias selection...
This paper presents the design of a novel RF power amplifier (PA) suitable for modern wireless communication systems. The PA employs switching mode class-E topology to exploit its soft-switching property to achieve high efficiency. The use of another class-E stage as a driver of power stage improves efficiency and increases the capability of circuit integration. A new output power control technique...
An Impulse based ultra-wide band (UWB) transceiver was designed using 130nm CMOS technology for a Bio-ranging system to improve the quality of cardiopulmonary resuscitation (CPR). It is developed to measure the depth of chest compression in CPR which is crucial factor for CPR quality using IR-UWB technology. The transmitter is composed of impulse generator and power amplifier (PA) operating at the...
A variable gain and output power CMOS power amplifier is presented in this paper. With combination switch controls of three cascode devices in the driver stage, the power amplifier can achieve a variable power gain and output power (seven types). The power amplifier was fabricated in 0.35-μm standard CMOS process, and is able to deliver a power gain of 10.5~27 dB and an output P1dB (1-dB compression...
A 60 GHz heterodyne up-convertor consuming only 29 mW, together with a PA consuming 84 mW, is presented. It is implemented in 90 nm CMOS. It takes advantage of sub-harmonic mixing and a sliding IF architecture, using a single LO around the relatively low frequency of 20 GHz, thus relaxing millimeter-wave LO design. This also allowed LO buffers to be eliminated, which minimizes area and power consumption...
The integration of RF NLDMOS transistors into a 0.13 μm CMOS process for operating at X-Band (8.5-10.5 GHz) frequencies with over 11 dB gain and 0.25 W/mm power density and 22% power added efficiency at 1 dB output power compression is presented. The self aligned NLDMOS was modularly integrated into IHP's 130 nm SiGeC BiCMOS platform targeting 1 W X-Band power amplifiers for radar and satellite communication...
A Class-AB Power Amplifier (PA) integrated circuit for 2.4 GHz is presented. It is designed in SMIC 0.18 μm RF CMOS process. The PA adopts two-stage differential structure. The driver-stage uses cascode structure. In the output-stage common-source structure is employed. The proposed PA provides 24.8 dBm output power with a power-added efficiency (PAE) of 21.2% at 1 dB compression point. It has a small...
The following topics are dealt with: GaAs IC; handset and base station front-ends; GaN HEMT; high speed digital circuits; ultra low noise receivers for radio astronomy; III-V advanced IC technology; digital and optoelectronic systems; CMOS; mm-wave oscillators and phase shifter; power amplifier; and HFET.
A 52-61 GHz power amplifier (PA) is implemented in 65nm CMOS bulk technology. The distributed active transformer (DAT) combines the output power from two unit PAs and achieves a peak output power of 14.8 dBm. Each unit PA uses two-stage differential cascode topology. This PA achieves a peak power gain of 10.2 dB with 10.8 dBm 1-dB compression output power (OP1dB) and a peak power-added efficiency...
A fully-integrated 3-5GHz-band FM-UWB transmitter implemented in 90nm bulk CMOS is described. The transmitter includes: a sub-carrier oscillator, a voltage reference, a transconductance amplifier, a RF current-controlled oscillator and a power amplifier. Self-calibration circuitry based on all-digital frequency-locked loop (FLL) using a successive approximation register (SAR) algorithm is included...
A stacked amplifier architecture has been used to achieve high RF output power levels in sub-100nm CMOS. The stacking makes it possible to both operate the power amplifier (PA) from a large supply voltage and implement RF power combining. As a proof of concept, a 6.5-GHz PA has been integrated in a 65-nm standard CMOS technology. The amplifier achieves 27.4-dBm output power with an efficiency of 19...
An integrated linear 2.4GHz CMOS power amplifier is presented. With a 3.3v supply, the PA produces a saturated output power of 33.5dBm with peak drain and power-added efficiencies of 44.2% and 37.6%, respectively and has 40dB small-signal gain. By utilizing gm-linearization and digital pre-distortion, an EVM of -25dB is achieved at 26.4dBm with 22% PAE while transmitting 54Mbs OFDM. The chip is fabricated...
A zero standby power remote control system used for household appliances is presented in this paper. The system consists of two parts. One is transmitting unit and power amplifier which send RF modulated signal. The other is receiving unit and power management block which recover energy, demodulate the RF signal and control the power switch of the household appliances. Both transmit and receive ends...
The design of Class E Amplifiers is more difficult than other type of amplifiers as it is imposed by time domain constraints. This paper presents the performance analysis of Mode Locked class E Power Amplifiers using State Space Analysis Algorithm. A technique is introduced which is used to curb the negative effect of parasitic resistance of DC Feed Choke and the Power Amplifier operates at 2.4GHz...
Transcutaneous power transmission is a critical issue for long term reliable operation of implantable systems. This paper reports a power-oscillator based inductive power link to power up any implantable unit inside the human body. Instead of using power amplifier which requires high drive requirement, two power-oscillator based inductive powering schemes have been presented to achieve high link efficiency...
SiGe Radio Frequency Integrated Circuits have been designed and fabricated for use in the X-band Si-based multi-function chip, which is known as a core-chip for a Transmit/Receive module of a phased array radar systems. In this paper, six kinds of Radio Frequency Integrated Circuits will be presented such as a power amplifier, a digital serial-to-parallel converter, a Single-Pole-Double-Throw switch,...
A 0.18mm CMOS fully integrated cascode Class-E power amplifier operating in 2.5GHz/3.5GHz/5.2GHz frequency bands for polar transmitters has been proposed. The tri-band amplification is achieved by adaptation of the common-gate transistor size and the matching networks. The phase distortion from supply modulation of the Class-E is compensated by controlling the common-gate transistor gate voltage and...
Single-ended (monopolar) and push-pull (bipolar) power amplifiers (PAs) are based upon complementary class-D PAs. The radio-frequency pulse-width modulation (RFPWM) waveform is produced in software and downloaded to a programmable-waveform generator. The PAs operate at 500 kHz and produce peak outputs of 100 W (monopolar) and 187 W (bipolar) with 85-percent efficiency. These amplifiers exhibit excellent...
Millimeter-wave (mm-wave) Radio-over-Fiber (RoF) can be described as mm-wave wireless links in combination with large bandwidth fiber optic interconnections. CMOS technology demonstrated the potential for wireless applications in mm-wave frequencies with advantages of low power consumption, high level of integration capability with other analog and digital circuits, and potentially low cost for mass...
In this work, a fully-integrated linear CMOS power amplifier (PA) is implemented in a 0.18-μm 1P6M RF CMOS process for 2.3-GHz and 2.6-GHz m-WiMAX system application. A wideband twisted figure-8-shaped transformer is utilized as both the power combining and matching, which is operated across 1 GHz bandwidth. The PA operates at Class AB mode and can deliver 29.1 dBm with a 26.5% PAE at 1-dB compression...
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