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Electrical characteristics of metal oxide-semiconductor field effect transistor (MOSFET) are numerically studied here. Carriers scattering in the inversion channel of MOSFET dominates the drain current. In this work, carrier scattering in the inversion channel has been measured in terms of mobility. Mobility for ultra-short channel device is far different from the mobility of long channel device....
In this paper, the electrical characteristics, such as CV and IV, of TSV embedded in grounded Si are presented. The aim is to understand the interaction between TSV and silicon substrate. Process developments of TSV with diameter of 5μm and height of 5-10μm are discussed in terms of DRIE Si via etching, isolation deposition, Cu ECP and Cu CMP.
This paper presents a continuation of an investigation into the behavior of ferroelectric lead zirconate titanate (PZT) thin films at high frequency through electromagnetic simulation. The electrical characteristics were analyzed on two transmission line (TL) structures namely microstrip (MS) and coplanar waveguide (CPW) built on PZT thin films. The characteristics are studied by investigating the...
An innovative readout channel, based on analog amplitude modulation of the signals recorded by each sensing site, is developed for high-density CMOS-based microelectrode arrays. A single amplification stage simultaneously records the neural activity acquired from several sensors. A theoretical analysis has demonstrated that a major physical limitation of the readout architecture relates to the summation...
Carbon nanotube MOSFET (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16nm P-type CN-MOSFETs are explored in this paper. The optimum P-type CN-MOSFET device profiles with different number of tubes are identified with a low substrate bias voltage for high-speed operation. Technology development guidelines are provided for achieving high-speed, area efficient,...
In this study, we propose a new technology to fabricate pseudo tri-gate vertical (PTGV) MOSFETs without p-n junctions, named junctionless PTGVMOS (JPTGV). According to numerical analysis, the excellent electrical characteristics such as subthreshold swing (S.S.) ~ 60mV/dec, Ion/Ioff ~ 1010, and low interface trap density are all achieved. The device without p-n junctions provides an easier way for...
Based on MOS capacitors, this work aims to study the thermal and electrical characteristics of HfLaON with different nitridation treatments by evaluating the device properties and monitoring the induced changes.
This paper proposes a novel vertical MOSFET with the middle partial insulation and block oxide (bMPI) structure for 1T-DRAM application. The bMPI 1T-DRAM can increase the pseudo-neutral region due to the bMPI under the vertical channel and its device sensing current window is improved about 95% when compared to the planer bMPI 1T-DRAM. Because of the double gate structure, the proposed device has...
In this study, we investigated the electrical characteristics of p-channel transistor by changing the process sequence of P+ Source/Drain Ion Implantation (IIP) N2 annealing process in NAND Flash memory. For the case of changing the process sequence of N2 annealing, off-current of p-channel transistor was dropped sharply, and increase of the on current compared to the off current is not worse than...
Degradation of electrical characteristics of NdAlO3/SiO2 stack gate under the constant voltage stress (CVS) is presented. It is found that the electron trapping, positive charges and oxide trap generation acts together, which causes the degradation of NdAlO3/SiO2 stack gate. The transport mechanisms of the gate leakage current in NdAlO3/SiO2 stack gate are also investigated. Frenkel-Poole emission...
The electrical characteristics of a-IGZO thin-film transistors (TFTs) with HfO2 and HfON/HfO2/HfON (NON) tri-stack gate dielectrics are comparative investigated. Experimental results indicate that NON gate dielectric can effectively improve interface properties and enhance device reliability compared to HfO2 gate insulator. Bottom gate a-IGZO TFTs with NON gate dielectrics exhibit improved performance...
This paper reports on the characterization of non-scalable square spiral inductors based on 0.15 μm GaAs pHEMT technology. The effect of number of turns on the electrical characteristics of the spiral inductors were characterized up to 40 GHz with inductances values obtained from 0.241 to 2.436 nH. The inductance and self resonant frequency (SRF) of the square spiral inductors were determined...
In a search for mineral oil substitutes, we investigated the characteristics of environmentally friendly silicone oil and ester oil. The electrical performance was assessed in terms of the breakdown, streaming electrification characteristics and the volume resistivity. The burning characteristics of each oil were also investigated. The temperature dependence of the breakdown voltage in an oil unit...
The effects of Bi2O3 doping on the electrical characteristics of Al-doped ZnO varistors were studied. The electrical characteristics and the microstructural parameters of the varistor samples with various content of Bi2O3 additive were investigated. With the amount of the doped Bi2O3 increased, the leakage currents of the Al-doped ZnO varistors are inhibited obviously. In addition, their breakdown...
In this paper the results obtained from simulations and measurements on InAlN/GaN HEMTs are presented. The HEMT material structure was modelled by Synopsys TCAD tools and electrical characteristics of the device were simulated by DESSIS. Several effects of the geometry and concentration of interface charges on the electrical characteristics are studied. The interface and surface charges as well as...
Investigation of electrical characteristics of partially-depleted SOI (silicon-on-insulator) and bulk-Si n-MOSFET devices in order to compare their electrical characteristics using Silvaco software was done and presented in this paper. Two specific channel lengths of the device that had been concentrated are 0.5 and 0.35 micron. The comparisons were focused on three main electrical characteristics...
As one of the renewable and clean energy resources, wind power is attracting considerable attentions and becoming most developing renewable energy resources due to its large unit capacity, etc. This paper make an basic approach to the construction of offshore wind farm power generation system, which is considered to be a promising way to increase the practical utilization of wind power. In this paper,...
In this paper, Ti-doped ZnO TFTs on SiO2/Si substrates by simultaneous RF sputter of Zn and DC magnetron sputter of Ti are successfully fabricated. With undoped ZnO TFTs, as-grown Ti-doped ZnO are compared with post-annealed Ti-doped ZnO TFTs in the furnace at O2 atmosphere of 300 °C. As the annealing time increases, the electrical characteristics such as sub-threshold slop (SS) and on/off current...
Summary form only given. Platinum nanoparticles supported on carbon nanotubes are attracting much interest owning to their unique catalytic, hydrogen storage and electrical characteristics. There are many methods for the loading of platinum nanoparticles on carbon nanotubes includes dispersing a solution or suspension of solid support and reducing the metal atoms to activate the catalyst. Most popular...
Scintillating, waveshifting, and waveguide fibers are used as particle detectors and light detection and transport elements in particle physics experiments. A study of light emission from such structures is being carried out for the Compact Muon Solenoid (CMS) experiment at CERN. For CMS, the fibers used are polystyrene core with a double-cladding and a diameter of 940 microns and lengths of up to...
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