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The electrical characteristics of a-IGZO thin-film transistors (TFTs) with HfO2 and HfON/HfO2/HfON (NON) tri-stack gate dielectrics are comparative investigated. Experimental results indicate that NON gate dielectric can effectively improve interface properties and enhance device reliability compared to HfO2 gate insulator. Bottom gate a-IGZO TFTs with NON gate dielectrics exhibit improved performance...
High κ HfO x N y film was deposited on amorphous InGaZnO (a-IGZO) by radio-frequency reactive sputtering using an HfO 2 target in nitrogen plus argon ambience, the electrical characteristics and reliability of a-IGZO metal–insulator–semiconductor (MIS) capacitors were investigated. Experimental results indicate that the nitrogen incorporation into HfO 2 can produce...
High κ HfOxNy gate dielectric film is deposited on amorphous InGaZnO (a-IGZO) by radio frequency reactive sputtering HfO2 target in N2 ambient. The κ-value is approximately 1.5 times higher than pure HfO2 owing to the existence of Hf-N bond. The results of SIMS, AFM and electrical properties measurement also indicate that nitrogen incorporation into HfO2 ameliorate the surface morphology of dielectric...
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