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Performance limits of n-channel MOSFETs are examined based on a quantum-corrected Monte Carlo simulation. We considered technology boosters such as ballistic transport, high mobility channel materials and three dimensional (3D) device architectures, and then investigated their quantitative advantages on device performance. As a result, we found that the quasi-ballistic transport is promising to improve...
Based on the complex bandstructure obtained by local empirical pseudopotential method (LEPM), we have developed a band to band tunneling model (BTBT), which captures band structure information, all possible transitions between different valleys, energy quantization and quantized density of states. Theoretical model is verified by experimental study on tunnel diodes on various semiconductors. BTBT...
Channel materials with high mobility will be needed for future technology nodes . In this work we assess the performance of Si, Ge, and III-V materials like GaAs, InAs and InSb which may perform better than even very highly strained-Si.
Channel materials with high mobility are needed for future nodes to meet the ITRS requirements of MOSFETs. In this work we assess the performance of Si, Ge, and III-V materials like GaAs, InAs and InSb which may perform better than even very highly strained-Si
In this work several photovoltaic technologies, ranging from silicon to thin films, multi-junction and solar concentrator systems are analyzed. The estimates of the energy production limits are established for each technology, based on available global material reserves. It is shown that many existing technologies, albeit playing an important in the present sub-GW energy production levels, are affected...
Performance limits of unstrained n- and p- MOSFETs with Si, Ge, GaAs and InAs channel materials are investigated using a 20 band sp3d5s*-SO semi-empirical atomistic tight-binding model and a top-of-the-barrier seminumerical ballistic transport model. It is observed that although the deeply scaled III-V devices offer very high electron injection velocities, their very low conduction band density-of-states...
We show that increasing the lattice constant on which CMOS electronics is constructed allows for an increasing electron and hole mobility in the NMOS and PMOS devices, respectively. This trend began with strained Si, and we have shown in research devices that compressed Ge combined with tensile Si can create previously unattainable high mobility MOS with high inversion charge. We also show that by...
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