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Geiger-mode avalanche photodiodes (APDs) have been used as single-photon-sensitive optical detectors for applications such as lidar imaging, laser spectroscopy, and optical communications. They are biased above the avalanche breakdown voltage, where the absorption of a single photon by the diode can trigger a self-sustaining avalanche discharge that can be digitized to count or time stamp the detection...
This paper presents an experimental analysis of the impact of AC- and DC-type Negative Bias Temperature Instability (NBTI) stresses on the CMOS inverter DC response and robustness. The results reveal, on one side, that the inverter DC response under AC NBTI presents a parallel shift of that shown under DC NBTI. However, the AC- to DC-induced shift of the inverter logic threshold is found much less...
This paper presents the design of a BJT-based remote temperature sensor to measure ambient temperature in different locations. The sensor chip supplies a calibrated current to the external devices, which are common off-the-shelf bipolar junction transistors — 2N3904 (NPN) and 2N3906 (PNP), and converts their base-emitter voltages to temperature using a 13-bit charge-balancing ΣΔ modulator. Dynamic...
This paper presents a 32.8MHz low power, supply insensitive monolithic CMOS relaxation oscillator. Instead of using voltage-mode comparators for cycle-to-cycle capacitor voltage swing (CVS) threshold voltage comparison, the CVS is regulated by a low-power closed-loop control which consists of a current-controlled delay cell (CCDC), a Gm-C error integrator and a comparator-free switch logic block....
We present a novel CMOS on-chip temperature sensor for use in low-voltage low-power applications. The sensor uses diode-connected BJTs to generate a PWM signal whose duty cycle is proportional to absolute temperature with high accuracy over a wide temperature range. The duty cycle is determined with a simple digital counter and converted to a digital code. Compared to other time-domain temperature...
We present a CMOS Charge Sensitive Amplifier (CSA) specifically designed for low capacitance pixel or silicon drift detectors for high resolution X-ray spectrometry. The intrinsic noise of the CSA has been measured at different operating temperatures with a triangular shaping with peaking time from 0.8 µs to 102 µs. At room temperature, the intrinsic Equivalent Noise Charge (ENC) shows a minimum of...
We report on the world's first backside-illuminated silicon photomultiplier (SiPM) implemented in 3D integrated circuit technology. The SiPM was fabricated in a two-tier 130nm CMOS process; the top tier houses 1600 single-photon avalanche diodes (SPADs), organized in a dual 4×200 linear array; the bottom tier houses 2×100 time-to-digital converters (TDCs). Every 8 SPADs there is one shared TDC whose...
We present a measurement method to properly take temperature effects in deep nanometer complementary metal-oxide semiconductor (CMOS) power amplifiers (PAs) into account. By means of pulsed radio frequency (RF) power measurements the amplifier performance degradation caused by semiconductor self-heating is analyzed and the circuit's thermal time constant is derived. The proposed measurement technique...
We proposed a temperature compensation method for a CMOS power amplifier (PA) without an external feedback circuit. The 79GHz PA using temperature compensation bias was fabricated using 40nm CMOS technology and suppressed the variation of the small-signal gain and the degradation of linearity to within 0.6dB in the temperature range from 10 to 100˚C with a fixed bias voltage. The PA using temperature...
This paper presents the design and characteristics of a receiver and a transmitter in 65-nm CMOS technology for automotive radar systems covering dual radar bands of 76 GHz and 79 GHz. The receiver has a 4-channel fully differential configuration for DBF systems. A unit receiver achieves a single-side band noise figure of 12 dB at an IF range from 1 to 200 kHz using a low 1/f-noise double-balanced...
In this paper, a novel temperature-insensitive gyrator is proposed with a temperature-compensated technique. The proposed gyrator-based active inductor composed of two back-to-back transconductors with a complementary technique are realized in triple-well 0.18-µm CMOS technology. The complementary circuit topology is adopted to decrease the variation caused by temperature effect on the tranceconductance...
A 13.56 MHz CMOS ring oscillator for DC/DC converter is demonstrated where measured performances make it suitable for wireless power transfer receiver system. The proposed structure employs a supply-regulated ring oscillator with a temperature compensated current bias circuit, which minimizes the frequency sensitivity to supply and temperature variations. Fabricated in a 0.11 μm 1P5M CMOS process,...
In this paper, an ultra low power CMOS-only voltage reference is presented. The reference exploits the work function difference between anti-doped (flipped-gate) and standard-doped nMOS devices. These devices require no additional processing and are realizable from the basic N+ and P+ implants used to implement the standard enhancement mode MOS devices on the process. The reference is implemented...
An integrated-CMOS-tunable-laser with 15-dBm output power is presented. Fabrication is realized in commercial CMOS foundry. Laser shows high power, low RIN, and ultra-narrow linewidth. Performance over fiber is comparable with best-in-class, market-leading ITLA, proving suitability for long haul coherent applications.
The leading edge products have a feature size of 22 nm in 2014. Designing reliable systems has become a big challenge in recent years. Transistor reliability has a great impact on highly-reliable CMOS circuit operations. Random telegraph noise is one of major recent transistor reliability concerns. First, recent researches on RTN and its impact on circuits are briefly summarized. Then the impact of...
A low-power smart temperature-sensor has developed using a standard 0.18µm CMOS process technology. The sensor utilizes the dependency of the rising time of the output pulse of an inverter, on the drain current when triggered by a fixed frequency square wave signal. The working temperature of the proposed architecture is −40°C to +85°C with the maximum-power dissipation of 4.276µW. The occupied Si...
With growing applications and increased integration of functionalities on multi-electrode biosensors, more attentions are paid to the need to include on-chip temperature measurement for providing ambient temperature monitoring of bio-samples and for recording heat generated by biosensor chips and their potential damage to bio-samples. This paper presents an integrated temperature sensor design which...
This paper reports on the world's first CMOS low noise amplifier (LNA) operating successfully on a radio telescope since October 15th, 2010. The radio telescope used in this work is the Synthesis Telescope operated by the Dominion Radio Astrophysical Observatory, NRC, and located near Penticton, BC, Canada. This paper describes the work that led to the installation of the LNA on the telescope and...
In utilizing CMOS-MEMS resonators as mass-sensitive platforms, a uniform temperature distribution on the membrane surface is critical. In this paper, a novel design of CMOS-MEMS resonator with embedded microheater to control the temperature over the sensing layer was successfully designed and characterized. The CMOS-MEMS resonator was fabricated using 0.35 µm CMOS and post-CMOS micromachining process...
A PVT tolerant fully integrated 60 GHz transceiver for IEEE 802.11ad is presented. By introducing a newly proposed self-sensing LDO, the transceiver adjusts bias currents and the LDO output voltage for the PA to minimize the output power variation while relaxing the hot carrier injection (HCI) degradation. The measurement shows excellent robustness against PVT variations, demonstrating only 5 dB output...
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