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An electronic THz transmissive imaging system is presented in this work. This system is composed of a CMOS signal source, a CMOS signal sensor, lenses, and commercial electronic chopping components. The output frequency of the signal source is 339 GHz, and the responsivity of the signal sensor is 200 kV/W. The total dc power consumption of those CMOS circuits is 91.02 mW. Using electronic chopping...
Three mm-wave pulse generation circuits fabricated in a standard 65nm CMOS process are presented. Two versions are based on the cross-coupled NMOS LC-VCO (500um × 300 um), and one is based on the Colpitts VCO (600um × 300 um). No additional buffers are used in the cross-coupled versions, as they are directly loaded by 50 Ohms through a balun. They can produce measured pulses exceeding 8dBm peak output...
This paper presents a 32.8MHz low power, supply insensitive monolithic CMOS relaxation oscillator. Instead of using voltage-mode comparators for cycle-to-cycle capacitor voltage swing (CVS) threshold voltage comparison, the CVS is regulated by a low-power closed-loop control which consists of a current-controlled delay cell (CCDC), a Gm-C error integrator and a comparator-free switch logic block....
This paper presents a new third-order quadrature oscillator using operational transresistance amplifiers as active elements. The proposed circuit provides high precision of the frequency of oscillation. The frequency of oscillation can be controlled using a single passive component and the condition of oscillation can be controlled orthogonally by setting the circuit components. Also two quadrature...
This paper presents a fully-synthesizable clock and data recovery circuit using injection locking technique. The challenges presented by automated place and route for high speed applications is overcome using background calibration mechanism. The fully-synthesizable all-digital architecture presented in this work is fabricated in 28nm FDSOI technology. The system has a top data-rate of 10.05Gb/s while...
This paper proposes the regenerative amplifier based on the Colpitts oscillator topology. The positive feedback amount was optimized analytically in the circuit design. The proposed regenerative amplifier was fabricated in 65 nm CMOS technology. The measurement results showed 28.7 dB gain and 6.4 dB noise figure at 2.55 GHz while consuming 120 μW under the 0.5-V power supply.
This paper presents a 26.5 Gb/s optical receiver with an all-digital CDR (ADCDR) fabricated in a 65 nm CMOS process. The receiver consists of a transimpedance amplifier (TIA), a limiting amplifier (LA), and a half-rate ADCDR. The TIA and LA are based on an inverter-based amplifier for low power consumption. The ADCDR adopts an LC quadrature digitally controlled oscillator (LC-QDCO) for the quadrature...
In this work, we present an integrated 230–310 GHz heterodyne down converter in 65 nm CMOS technology. The circuit includes a mixer and a local oscillator based on a Colpitts topology VCO. The on-chip oscillator generates a 88–95 GHz fundamental tone but drives the mixer with the 3rd harmonic around 270 GHz. The down converter measured conversion loss is about +25.5 dB around 280 GHz. The measured...
A new concept based on the injection of a periodically repeated oscillations train into an oscillator is presented. It is based on a phenomenon named pseudo-locking, leading to a novel programmable harmonic selection technique. Theoretical description of the concept is presented, in particular an analytical condition is carried out, paving the way of design rules. For a proof of concept, an oscillator...
In this paper, a novel temperature-insensitive gyrator is proposed with a temperature-compensated technique. The proposed gyrator-based active inductor composed of two back-to-back transconductors with a complementary technique are realized in triple-well 0.18-µm CMOS technology. The complementary circuit topology is adopted to decrease the variation caused by temperature effect on the tranceconductance...
This paper focuses on CMOS biosensor technologies for cellular biosensing applications. We first present our technologies to achieve on-CMOS cell culture, maintenance, and differentiation, as the basis for CMOS cellular biosensors. Next, we introduce a CMOS frequency-shift magnetic sensor scheme which performs detections without post-processing or external biasing magnetic field. Finally, we will...
This paper presents a low-power discrete-time chaotic oscillator based on approximately non-linear characteristic. The oscillator circuit consists of an inverter and subtractor operational amplifier (Op-Amp) in order to controlled transfer characteristics by gain of Op-Amp. The circuit has been using as a chaos map that generates discrete-time chaotic signal. Simulations of proposed circuit are described...
This paper presents a flexible 40×40cm2 gesture-sensing sheet for large-area interactive-spaces. The system achieves out-of-plane sensing to 16cm. Self-capacitance readout of individual electrode pixels in a 4×4 array enables multiple gestures to be sensed simultaneously without ghost effects. For high-sensitivity readout, pixel self capacitance is converted to frequency via high-Q LC oscillators...
A fully-integrated sensing system utilizes a ring oscillator-based phase locked loop (PLL) for wideband complex dielectric spectroscopy of materials under test (MUT). Characterization of both real and imaginary MUT permittivity is achieved with frequency-shift measurements between a sensing oscillator, with a frequency that varies with MUT-induced changes in capacitance and conductance of a delay-cell...
A 3.1 nJ/bit pulsed millimeter-wave transmitter, 300μm by 300μm by 250μm in size, designed in 32-nm SOI CMOS, operates on an electric potential of 130mV and 3.1nW of dc power. These achieved power levels and potentials are comparable to those present across cellular and intracellular membranes. Far-field data transmission at 33 GHz is achieved by supply-switching an LC-oscillator with a duty cycle...
A new enhanced swing class-D quadrature VCO which operates from a supply voltage as low as 350 mV is presented. The prototype 5 GHz VCO was fabricated in a 65 nm RF CMOS process. The measured phase noise performance is −137.1 dBc/Hz at 3 MHz offset with a power dissipation of 2.1 mW from a 0.35 V supply. The resulting figure-of-merit (FoM) is 198.3 dBc/Hz. Compared to prior CMOS LC VCO designs, the...
A high output power and high efficiency injection-locked millimeter-wave (mm-wave) signal source is demonstrated by zero-phase coupled oscillator network (CON) at 140GHz. Each oscillator unit-cell is designed by an inter-digital coupler with zero-phase shift and 0.4dB loss at 70GHz, and is further doubled to 140GHz by a push-push frequency doubler. With four in-phase coupled unit-cells, high output...
Quadrature oscillator based on the operational transresistance amplifier (OTRA) is presented in this paper. The proposed quadrature oscillator circuit uses two OTRAs as main active building blocks and a few external passive components to generate the oscillations. The circuit provides independent control over the condition of oscillation and frequency of oscillation. A prototype circuit is implemented...
The main goal of this paper is investigation of the fault coverage dependence on the value of the oscillation frequency in oscillation-based tests of analog circuits. For this purpose, an operational amplifier designed in 90 nm CMOS technology was used as a Circuit Under Test (CUT) in our experiment. Then, the CUT was transformed into an oscillator and different catastrophic faults were considered...
This paper shows a novel capacity to digital measurement circuit that is suited for differential MEMS capacitive sensors such as pressure sensors or condenser microphones. The basic operating principle relies on two differential reactance-controlled multivibrator circuits whose frequency differences are sensed by a Time to Digital Converter. The multivibrator oscillators may be biased in the relaxation...
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