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A low-power radio analog front-end which includes a self-interference (SI) cancellation circuit and a harmonic-rejection power amplifier (HRPA), is proposed to reduce the interaction between a transmitter (TX) and receiver (RX), to enable full-duplex operation. A prototype TSMC device demonstrates more than 30dB SI cancellation over a 4MHz BW and a PA 3rd and 5th harmonic reduction of 30dB and 15dB,...
This paper reviews our portable multi-dimensional nuclear magnetic resonance (NMR) spectroscopy system combining a 4-mm2 CMOS NMR spectrometer integrated circuit (IC) and a permanent magnet. The work was first reported in [1] with emphases on overall system development and spectroscopy experimentations. Here we pay more attention to the IC design. The scalability of the integrated spectrometer can...
In this work, a high voltage (HV) galvanically isolated chip-to-chip communication circuit utilizing laterally coupled resonators is reported. The adjacently placed resonators provide high voltage galvanic isolation (GI) using horizontal space between resonators filled with oxide, which minimizes the need for thick inter-metal dielectrics. A previously unexplored application for lateral coupling is...
This paper investigates the use of stacked depletion-mode n-channel MOSFET (D-MOS) for RF switch applications. Compared to the commonly used enhancement-mode MOSFET (E-MOS), the D-MOS transistor offers a significant reduction in on-state resistance (RON) and off-state capacitance (COFF) simultaneously and an excellent figure of merit (RonX Coff) of 134fs (roughly 3X improvement) can be achieved. With...
An ultra-wideband low noise amplifier is presented in this paper. The current-reuse technique is used to get the desired results with lower power consumption. Input impedance matching of 50 Ω is provided by a common-gate through resistive feedthrough stage all-entire the 3–11GHz band of interest. Second stage is used to get a good flatness and high conversion gain. Simulation results in TSMC 180nm...
Nanopore-based molecular sensing affords a close coupling between DNA sequencing and semiconductor signal processing. This link, in turn, promises to greatly expand genomics applications to health-care and environmental stewardship. As discussed in this paper CMOS technology possesses the ability to process nanopore signals for the purpose of initial data estimation (basecalling) faster by three-decades...
High speed silicon optical modulators must be compatible with CMOS drivers to reach their full potential for low cost and low power consumption. We designed a CMOS driver for a Mach-Zehnder modulator (MZM) that has been segmented to lower required voltage swings on a per segment basis and to increase the speed. Previous inductor-less drivers produced on the same process, IBM 130 nm CMOS, ran at 10...
Design approaches for radio frequency (RF) analog realization of two-dimensional (2-D) network-resonant plane-wave filters are discussed. The plane-wave filters having potential applications in electronically scanned wideband beamforming scenarios operate in spatially-discrete temporally-continuous 2-D mixed-domain as described by their recursive input-output relationships. The proposed approaches...
This paper presents a wide band upconverter which consists of an inductance switched voltage control oscillator (VCO) and up-conversion mixer. In order to enhance the oscillating frequency range, the VCO has 3-bit control function with switchable inductance. Therefore, it could offer a wide band local oscillator (LO) signal for the upconverter. Meanwhile, the upconverter employs double balanced Gilbert...
This paper presents a novel CMOS rectifier for RF energy harvesting. DC-boosted biasing technique is proposed to enhance power conversion efficiency (PCE) by improving forward peak current, reducing diode forward voltage drop and suppressing reverse leakage current. The main rectification diode is configured as threshold compensated diode during on-state whilst the gate voltage is bounded during off-state...
This paper proposes a novel rectifier design method using a standard 0.18µm CMOS MMIC and a GaN (Gallium Nitride) diode by hybrid semiconductor integrated circuit (HySIC) technology. The target RF input power is around 10W at 5.8 GHz and output DC power is 2–3W. To achieve such high input/output power with small CMOS chip, low impedance and wide thin-film micro-strip (TFMS) lines are used as impedance...
The impact of the emitter polysilicon etching in Tetramethyl Ammonium Hydroxide (TMAH) on the characteristics of high-linearity mixers fabricated with the low-cost Horizontal Current Bipolar Transistor (HCBT) is analyzed. During emitter formation, the thick layer of α-Si is deposited over the whole wafer, which is then etched-back in the TMAH. The emitter thickness depends on the TMAH etching time...
5G poses severe challenges to PA design. In the first place, output power and efficiency are of prime importance because of battery lifetime. The tradeoff between linear output power and efficiency is typically challenged by the high PAPR due to QAM modulation and/or OFDM techniques. But this important trade-off is challenged even more in 5G due to the high bandwidth requirements. Furthermore, the...
For radio-frequency (RF) circuits, energy harvesting is one of the research topics in recent years. By converting ambient energy into the required electrical energy, the circuit can still perform its functionality without any extra power source. In RF energy harvesting circuits, the most important part is the rectifier circuit. Therefore, this paper proposes an automated design tool for CMOS multi-stage...
Memristive devices are promising nanoelectronic components for the next generation non-volatile memory and unconventional computing. As they are most likely be used together with CMOS platform, it is important to develop CMOS compatible memristive devices in terms of materials, processes, and most importantly, electrical performance. In this paper, we first introduce our efforts towards low-voltage...
We investigate the influence of additional dc current on response of CMOS THz detectors. A resistive self-mixing model calculation, shows that the voltage response of CMOS detectors increases significantly by applying a small dc current on the drain side of CMOS device. The calculation results are further verified by the experimental data from CMOS detectors at 0.65THz. The maximum voltage response...
This paper proposes an architecture of a conditioning circuit for dual-modality wire-mesh sensors, applied to multiphase flow measuring. The proposed circuit topology uses an AC-based impedance measurement technique, and is able to process signals from a 4×4 wire-mesh structure, performing an I/Q demodulation for the direct extraction of fluid permittivity and conductivity values. System-level considerations...
This paper presents a novel unbalanced transformerless vector-sum phase shifter architecture. The proposed approach is based on the forming of four signals from the input unbalanced signal by an RC quadrature all-pass filter. These signals are subtracted to obtain a pair of orthogonal signals which are added on the load network of the Gilbert cells with weighted coefficients to form the differential...
This paper presents the simulation results of a linear, fully integrated, two-stage digitally programmable 130 nm CMOS power amplifier (PA) operating at 2.4 GHz. Its power stage is composed of a set of amplifying cells which can be enabled or disabled independently by a digital control circuit. All seven operational modes are univocal in terms of 1 dB output compression point (OCP1dB), saturated output...
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