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Transition metal chalcogenides are perspective thermoelectric materials which have a great interest for application. In this work, the polycrystalline bulk WS2 and solid solutions WS2−ySey types have been studied. In contrast to the literature data obtained at higher temperatures, we have investigated the thermoelectric properties of these materials at low and middle temperatures (77–450K). The temperature...
The paper reports the results of an experimental investigation of electron transport properties and piezoresistive effect of polycrystalline film and bulk samples of tungsten-rhenium disulphide W0.95Re0.05S2. Polycrystalline powder of the composition was synthesized by direct high temperature reaction of elements with stoichiometric ration. The film samples were prepared by ultrasonication of the...
The series of experiments measuring the transient response of a-Si:H pin photodiode to light impulses superimposed to constant light (optical bias dependence of modulated photocurrent method — OBMPC) of the same wavelength (430 nm) and various reverse voltages on photodiode was performed in order to characterize localized states of the energy gap of amorphous silicon and their influence on photocurrent...
The linear characteristics of the InP/InGaAs avalanche detectors are modeled and numerically analyzed by developing a new TCAD-based simulation environment. Temperature dependency of the impact ionization coefficients in InP are fitted for 200 K to 300 K temperature range. Adjustment of the model parameters for the simulations of the dark current sources in InP and InGaAs materials is performed in...
Single-photon avalanche diodes (SPADs) are gaining popularity in applications where low intensity light needs to be detected. Since they are used in Geiger mode, where the self-sustaining avalanche needs to be quenched, an important part of the detection circuitry is the quenching circuit. First, we examine the operation of a basic passive quenching circuit consisting of the SPAD and two series resistors...
The impact of the emitter polysilicon etching in Tetramethyl Ammonium Hydroxide (TMAH) on the characteristics of high-linearity mixers fabricated with the low-cost Horizontal Current Bipolar Transistor (HCBT) is analyzed. During emitter formation, the thick layer of α-Si is deposited over the whole wafer, which is then etched-back in the TMAH. The emitter thickness depends on the TMAH etching time...
Design of cross-coupled voltage controlled oscillator in low-cost HCBT technology is presented. Beside the low-complexity front-end devices, only 2 metal layers are used and the passives are implemented in the available on-chip structures. Varactors are fabricated as pn-junctions by using the ion implantation from the technology. Symmetric inductors are fabricated by using the topmost metal layer...
The paper deals with design and analysis of a variable-gain amplifier (VGA) working with a very low supply voltage, which is targeted for low-power applications. The proposed amplifier was designed using the bulk-driven approach, which is suitable for ultra-low voltage circuits. Since the power supply voltage is less than 0.6 V, there is no risk of latchup that is usually the main drawback of bulk-driven...
This paper presents an improved technique for the calibration of the relaxation oscillators with respect to the delay of the comparators. The drawbacks of the conventional topology for the relaxation oscillators are analyzed. Based on the analysis, the circuit modification which resolves the effects of the comparator delay in the trimming procedure is proposed. The simulations in ams 0.18μ CMOS technology...
Bootstrap circuits are essential parts of integrated DC-DC converters with an NMOS transistor as high-side switch, which provide voltage overdrive for the gate drivers and to drive the high-side switch's gate. This paper presents a bootstrap circuit which doesn't need an additional supply voltage for charging the bootstrap capacitor to a desired voltage level, but uses the input voltage of the converter...
The paper presents a subsampling PLL which uses a 10-bit, 0.5 ps unit step Digital-to-Time Converter (DTC) in the phase-error comparison path for the fractional-N lock. The gain and nonlinearity of the DTC can be digitally calibrated in the background while the PLL operates normally. During fractional multiplication of a 40 MHz reference to frequencies around 10 GHz, the measured jitter is in the...
This technical paper presents the design and testing of the protection system for evaluation of high-voltage devices and circuits, e.g. SiC and GaN devices or high-voltage switching DC-DC converters. The high-voltage testing area is protected from invading by an array of infrared (IR) emitters and detectors. Whenever an object passes through the IR protected space, a high-voltage DC source is disconnected...
This paper describes a classic method of an analog harmonic multiplier which uses a C class amplifier topology. The goal of this work is to propose the method of finding the optimal conduction angle of a E-pHEMT transistor so that a better spectral purity of the second or third harmonics can be obtained. MATLAB simulations are performed and the electronic circuit with an E-pHEMT transistor is designed...
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