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Currently, solar energy is the primary source of energy for space missions. The development of space systems is affected to many fields: the study of space itself, the science of materials and especially the field of energy. Indeed, solar panels are the only non-nuclear means that enable satellites in orbit to be fed continuously. The efficiency of these solar cells increases. Current triple junction...
Increasing the base doping concentration, utilizing gold as the recombination center, employing high quality oxide layer and applying the hardening design for physical structure could effectively reduce the change rate of current gain after irradiation. This conclusion is found out by analyzing the variation of the current gain of bipolar junction transistors with components in different craft.
In this paper, we simulate and investigate a novel Tunnel Field-Effect Transistor (TFET) using the charge plasma concept on the source side. Herein, an inverted p-type source is created to form a p+-n tunneling diode structure on a uniformly n-type doped thin silicon film, hence named, Inverted-TFET (I-TFET). Using calibrated simulations, we verify that the Ion is boosted (□ 20 times) in the proposed...
In this work, we demonstrate a way to modulate threshold voltage of InGaAs Fin-structured High-electron-mobility transistors (Fin-HEMTs) by narrowing fin width of the devices. Normally-off InGaAs FinHEMT has been successfully achieved when fin width of devices is smaller than around 180 nm. Also, we introduce a theory to explain side wall gates control of FinHEMTs to modulate threshold voltage.
CMOS and tunneling FETs (TFETs) utilizing low effective mass III-V/Ge channels on Si substrates is expected to be one of the promising device options for low power integrated systems, because of the enhanced carrier transport and tunneling properties. In this paper, we present viable device and process technologies of Ge/III-V MOSFETs and TFETs on the Si CMOS platform. Heterogeneous integration to...
In this work, the electrical isolation of nanowires fabricated on bulk wafers is investigated. It is shown that electrical isolation can be realized with a Ground Plane isolation implant at the beginning of the process flow. For transistors using extensions, it is seen that a relatively high dose of Ground Plane doping is needed in order to avoid punchthrough through a parasitic channel less controlled...
Wide bandgap semiconductors are promising regarding loss reduction and increase of switching frequency. In the specific case of two level power converter it has not been up to now clearly shown the potential of SiC and GaN in comparison with Si semiconductors. In this paper, a multi-variable analysis for different devices is carried out, considering system efficiency, heatsink size and output filter...
New type of Josephson junctions with hybrid nanostructured barriers has been fabricated and investigated. Heterostructures consisting of superconducting MoRe electrodes with a critical temperature about 9 K and a silicon film with a thickness of several dozens of nm (sandwiched between them) were fabricated. The silicon layer was doped by tungsten with various atomic concentrations. By using an atomic...
The main objective of this paper is to increase the power conversion efficiency by effective solar spectral band splitting. This is attained here by cascading semiconductor materials of varying energy band gap arranged in the decreasing order. In addition, an efficiency of a multijunction solar cell can be improved by current and lattice constant matching of the cells. Accordingly, a multijunction...
We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation with extinction ratios > 14 dB by sufficient Moss-Burstein shift, for generic Ge-on-Si Photonics platform.
The GaAsP/Si dual-junction solar cells have been systematically investigated in our paper by using AMPS (Analysis of Microelectronic and Photonic Structures). Based on the optimized results of single-junction solar cells, we propose a promising method to improve the properties of the dual-junction solar cell. And the monolithic GaAsxP1−x/Si dual-junction solar cells with various As compositions (x=0...
In this work, the viability of different materials as the source region of a Double-Gate Tunnel FET (DG-TFETs) has been studied. The study essentially focuses on obtaining superior current switching ratio (ION/IOFF), threshold voltage (Vth) and subthreshold swing (SS) in DG-TFETs. In this regard, a comparative analysis of electrical and analog parameters of DG-TFETs with Silicon (Si), Germanium (Ge)...
The effects of fast neutron radiation up to flux of 1014 cm−2 (1 MeV equivalent flux) upon the turn-on and forward static characteristics of MOS-Controlled Thyristor (MCT) are described in this work, based on physics-based 1-dimension analytical calculation and 2-dimension Silvaco simulation. It is reported for the first time that dependency of on-state specific resistance (Ron) upon neutron flux...
Ion implantation is the most important silicon doping method in the process of semiconductor manufacturing. The common used analysis methodology such as FIB/SEM/TEM is restricted in analyzing the ion implantation related defects, while the chemical stain technology can provide very essential data in ion implantation process. The etching mechanism of silicon is very complicated with the mixture of...
Reliability of Superjunction (SJ) MOSFET is closely related to its manufacturing process. Experiments are carried out to investigate the electrical characteristics in high temperature of SJ MOSFET produced by deep trench filling technology. Filling holes are confirmed to be responsible for the performance deterioration in high temperature and the mechanism has been analyzed thoroughly.
In this paper, we report the simulation of high doping nanoscale heterojunction diode, particularly Si1−xGex/Si p-n diode, using Cogenda Visual TCAD. In order to gain knowledge on electrical properties of this diode, we exhaustively simulate the effect of Ge mole fraction in SiGe material on current, voltage and electric field characteristics. The simulation covers Ge mole fraction of 0.2 to 0.7 in...
Graphene is an appealing material due to its distinct electronic, mechanical and optical properties. Recently, graphene based field effect transistor (GFET) have been rapidly developed and show the potential applications.
This paper presents thermal characteristics of rotor-side converter (RSC) in doubly-fed induction generator (DFIG) wind turbines (WTs). A numerical power loss and thermal model simulator has been developed to obtain instantaneous junction temperature of power devices for a wide operating range of RSCs. Thermal performance of four RSC candidates, including Si IGBT based 2L / 3L-NPC / 3L-ANPC RSCs and...
In this study, the optoelectronic properties of a monolithically integrated series-connected tandem solar cell are simulated. Following the large success of hybrid organic-inorganic perovskites, which have recently demonstrated large efficiencies with low production costs, we examine the possibility of using the same perovskites as absorbers in a tandem solar cell. The cell consists in a methyl ammonium...
Silicon-plasmonic photodetection based on internal photoemission exploits the intrinsic absorption in plasmonic waveguides at metal-dielectric interfaces. For this purpose we designed an asymmetric metal-semiconductor-metal waveguide with a width of 75 nm. Our plasmonic internal photoemission detector (PIPED) shows a rec-ord-high photocurrent sensitivity of up to S = 0.12 A / W for light at a wavelength...
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