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In this work, we demonstrate a way to modulate threshold voltage of InGaAs Fin-structured High-electron-mobility transistors (Fin-HEMTs) by narrowing fin width of the devices. Normally-off InGaAs FinHEMT has been successfully achieved when fin width of devices is smaller than around 180 nm. Also, we introduce a theory to explain side wall gates control of FinHEMTs to modulate threshold voltage.