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This paper describes new features and versatility of a Verilog-A FET model for High-Efficiency and wideband applications, with examples in GaN technologies. It describes the flexibility of having the Internal output nodes available for design in exact wave-shaping for high-efficiency class amplifications and a more realistic CDS formulation that meets the needs of newer HEMT technologies with multiple...
A next generation of AESA antennas will be challenged with the need for lower size, weight, power and cost (SWAP-C). This leads to enhanced demands especially with regard to the integration density of the RF-part inside a T/R module. The semiconductor material GaN has proven its capacity for high power amplifiers, robust receive components as well as switch components for separation of transmit and...
As a transparent conducting oxide with a large bandgap of ∼4.9 eV and associated large estimated critical electric field (Ec) strength of 8 MV/cm, β-Ga2O3 (BGO) has been touted for its tremendous potential as a power switch. Power switch metrics such as Baliga's figure of merit (BFOM) estimating dc conduction losses and Huang's material figure of merit (HMFOM) incorporating dynamic switching losses...
The proliferation of the wireless market has driven the demand for RF systems to dramatically increase functionality, frequency coverage, bandwidth, and efficiency; while simultaneously reducing power consumption and die size to save power and cost. For example, the highly complex RF systems in handset technology have seen a dramatic increase in frequency, operating bands, and complexity of signals...
This paper investigates a new reconfigurable switched-capacitor (SC) based partial power architecture which enhances the performance of radio frequency (RF) resonant DC/DC converters with gallium nitride (GaN) power devices. The proposed architecture has a comprehensive compatibility with existing RF and SC topologies and improves the performance of RF converters through partitioning of energy conversion...
This paper presents a monolithic multilevel converter realized in a depletion-mode GaN process and intended to operate as a drain supply modulator (DSM) for high efficiency radio-frequency (RF) power amplifiers (PAs). The custom prototype chip includes a four-level power stage with on-chip integrated gate drivers and damping networks designed to mitigate effects of parasitics during output voltage...
In this paper, authors present the preliminary measurements of a PWM-based transmitter. It is realised by cascading a pulse width modulator and a driver stage (PWCD), with a high efficiency Class E switched mode power amplifier (SMPA). The PWCD was realized by using 250nm BiCMOS process from IHP (SGB25V GD), while the SMPA was realized by using a packaged GaN device from UMS (CHK040A-SOA). The preliminary...
Envelope tracking (ET) is an appealing alternative to the widely used Doherty power amplifier (PA) due to its potential to increase efficiency, particularly for high data rate transmissions. In this work, we demonstrate a 28 V, 865 MHz switching speed step-down converter that can be applied to envelope tracking. The converter's ET capability is demonstrated at up to 865 MHz PWM carrier frequency....
Green and flexible digital transmitter is envisioned as the evolving trend for future cellular base station, which is required to operate with multi-standard and multi-band radio signals. To energy efficiently amplify the spectrum-efficient modulated signals with high peak-to-average power ratio (PAPR>10 dB) is challenging. Compared with traditional analog solutions using Doherty Power Amplifier...
This paper presents the analysis and design of the pulse-width modulated (PWM) buck dc-ac converter used as a dynamic power supply for amplitude-modulated class-E radio-frequency (RF) power amplifier (PA). The buck dc-ac converter operates at a fixed input voltage and a variable output voltage. The differences in the inductor current profiles of the buck dc-ac converter and the classical buck dc-dc...
This paper describes very high frequency (10–200 MHz) switched-mode power converters using custom GaN chips with integrated power switches and gate drivers, allowing standard logic-level PWM control inputs. Circuit design techniques are described in depletion-mode 0.15μm RF and 0.25μm switch GaN-on-SiC processes, including integration of gate-drive and level translation circuits. Operating from up...
A solidly mounted tunable barium strontium GaN/Sapphire substrate using a metalorganic solution deposition (MOSD) technique. An acoustic Bragg reflector was first formed on the GaN/sapphire substrate consisting of alternating layers of silicon dioxide and tantalum oxide deposited using a-spin on technique. Lower and upper electrodes were fabricated using sputter deposited platinum. The resonant frequency...
This paper outlines a design concept of a PWM driven switched mode power amplifier (SMPA) with direct filter connect, making up all circuitry necessary for an energy efficient digital RF transmitter. For the output matching network design the simplified real frequency technique (SRFT) has been extended in a way to achieve high output power in signal band while reducing power consumption by controlling...
This work presents a transformer-coupled class D switched-mode power amplifier using GaN-on-Si. An aggressive time-domain compatible, scalable, Angelov device model is used to accurately predict transient switched-mode device behavior. Simulation and measurement results report the GaN power device's intrinsic device efficiency to be 62% when operating as a switch at 2.25Gb/s. The 2-transistor PA topology...
Linear-assisted switching power amplifiers are based on combinations of switching converters (for high efficiency) and linear amplifiers (for high-speed, wide bandwidth responses) in applications such as envelope tracking (ET) for radio-frequency (RF) power amplifiers. This paper presents a pre-filter design approach for band separation of inputs signals for the linear and the switching amplifier...
An experimental VHF DC/DC converter aimed at envelope-tracking amplifiers for space applications is presented. Based on Gallium Nitride components, it is capable of operating in the range of tens of watts, as required by on-board transmitters. When driven by a 50-MHz PWM signal, it reaches a peak efficiency of 91.6%. A detailed breakdown of the associated losses is reported in order to identify the...
This work presents the design and measured results of a fully integrated switched power two-stage GaN HEMT high-power amplifier (HPA) achieving 60% power-added efficiency at over 120Woutput power. This high-efficiency GaN HEMT HPA is an enabling technology for L-band SweepSAR interferometric instruments that enable frequent repeat intervals and high-resolution imagery. The L-band HPA was designed...
In this work, we developed a compact single-chip isolated gate driver with a high isolation voltage that requires no additional isolated voltage source. This developed gate driver employed “Drive-By-Microwave Technology,” which supplies an isolated signal and power by mixture to a power switching device by using wireless power transmission technology. It was also developed that a new compact butterfly-shaped...
We have developed new isolated gate drivers using what we call Drive-by-Microwave technology that enables wireless power transmission of input signals. In order to realize the compactness of the gate driver and to obtain isolated gate signals with enough power to directly drive the switching power devices, we have developed a novel compact butterfly-shaped electro-magnetic resonant coupler (EMRC)...
The wireless power transmission technology using an electro-magnetic resonant coupler (EMRC) has been applied to an isolated direct gate driver for GaN power switching devices. This direct gate driver with the Drive-by-Microwave technologies dose not needs an additional isolated voltage source and a photo-coupler because it can supply an isolated gate signal and signal power all together. The wireless...
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