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Fast switching operation of power electronics systems is significantly advantageous for reducing volume of passive components and increasing power density in the systems. Next generation power devices, such as GaN gate-injection transistor (GIT), are promising for high frequency operations and isolated gate driving is also highly recommended owing to its noise robustness. In this paper, we propose...
A compact and fast GaN bi-directional switching diode is described, which is integrated with a GaN/Si bi-directional power switch and a Drive-by-Microwave (DBM) isolated gate driver using a microwave wireless power transfer. The fabricated 600V 15A GaN bi-directional switching diode exhibits its low Ron of 160 mΩ under 85 °C ambient temperature without an external heat sink. The compact 12mm × 25...
A compact isolated Drive-by-Microwave (DBM) half-bridge gate driver is newly developed, which can drive GaN-GITs with its constant and low power consumption of 0.9 W even a high switching frequency up to 1.0 MHz due to the gate power time sharing by using the 2.4GHz microwave wireless power transmission. The fabricated GaN isolated DBM half-bridge gate driver provides enough output gate power for...
A low-cost and small size inverter module is required for a low-power motor system. In this work, we developed a compact GaN inverter module that is composed of GaN-GIT power devices and DBM (Drive-by-Microwave) gate drivers. The fabricated compact 5kW GaN inverter module successfully reduced its foot print for the gate drivers by 55% because it doesn't require an isolated DC power source. The fabricated...
A new Drive-by-Microwave (DBM) isolated gate driver with gate current charge is presented, which drives an IGBT without an isolated power supply by switching the charged current through a microwave wireless power transmission. The fabricated compact DBM gate driver outputs an isolated gate voltage of 15V and successfully demonstrated the 300A-IGBT drive with the 2.0A peak gate current. Furthermore,...
A new isolated Drive-by-Microwave (DBM) gate driver with a high-speed voltage monitoring for over current detection is proposed, which is composed of a 2.4GHz GaN/Si DBM transmitter, DBM receiver chip and compact isolated couplers in a low-cost printed circuit board. The fabricated DBM gate driver demonstrates a 200 Mbps isolated data transmission and a GaN power switching device's driving with a...
A low cost and compact isolated gate driver with Drive-by-Microwave technology is developed, which consists of 2.4 GHz GaN/Si transmitter and receiver chips and the butterfly isolation coupler that integrated in a printed circuit board based package. The fabricated DBM gate driver successfully demonstrated that it drove a GaN power switching device with a very fast switching. The fabricated DBM gate...
In this work, we developed a compact single-chip isolated gate driver with a high isolation voltage that requires no additional isolated voltage source. This developed gate driver employed “Drive-By-Microwave Technology,” which supplies an isolated signal and power by mixture to a power switching device by using wireless power transmission technology. It was also developed that a new compact butterfly-shaped...
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