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New construction of the AlGaN/GaN/semi-insulating Schottky diode was proposed for operation at gigahertz regime. Based on the performed numerical simulations the planar diode with inter-digitated lay out was elaborated. The test structures of the diode was fabricated in AlGaN/GaN heterostructures grown on a c-plane sapphire by MOVPE technique. The d.c. and high frequency characteristics of the device...
In this work, we compare for the first time the performance results of AlGaN/GaN HEMTs processed on a free-standing chemical vapor deposition (CVD) polycrystalline diamond substrate and a silicon substrate with nominally the same epitaxial AlGaN/GaN layers both grown by metal-organic chemical vapor deposition (MOCVD). The objective of this work is to compare the small signal and DC trends of the transistors...
AlGaN/GaN high electron mobility transistors (HEMTs) were grown on Si substrates by MOCVD. In the HEMT structure, the 1 μm GaN buffer layer was partially doped with Mg in an attempt to increase the resistivity and minimize the buffer leakage current. Afterwards, an AlN spacer layer was inserted between the AlGaN barrier layer and the GaN channel layer to effectively reduce impurity scattering and...
We are reporting a p-InGaN cap layered AlGaN/GaN normally-OFF type HEMTs on silicon substrate with VG applicable as high as +3.5V without gate leakage. Further we achieved a high breakdown for relatively a small gate-drain length (Lgd) of 3 μm. Demonstrating a normally-OFF type AlGaN/GaN HEMTs on low cost Si substrate, coupled with high breakdown is an important step forward to integrate enhancement...
High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×1013 cm-2 was measured in this structure. To character the electric property of this heterostructure, a 1-μm-long gate InAlN/AlN/GaN high-electron mobility transistors (HEMTs) were fabricated. A maximum output current density...
The demonstration of device structure incorporating an ultrathin AlGaN barrier capped with a thin AlN layer in the source-drain access region to maintain high 2DEG charge, with a gate opening formed by selective wet etching of the AlN using heated photoresist is reported. AlN/AlGaN/GaN layer structures are grown on a-plane Al2O3 substrates by metalorganic chemical vapour deposition. In conclusion,...
This paper describes a comparative study on device characteristics of short-gate AlGaN/GaN HFETs with extremely thin SiN films deposited by different methods on the AlGaN surfaces. SiN deposition on an AlGaN surface greatly increases ns regardless of the deposition method, and it is useful to fabricate highly-scaled GaN HFETs for high-frequency applications. However, specific device characteristics...
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