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This paper reports on the electron-beam induced current (EBIC) measurement of minority carrier diffusion length as a function of electron beam acceleration voltage in Si-doped, MOCVD grown, gallium nitride. The measured diffusion length varied from 160nm at 8kV to 220nm at 15kV. Possible reasons for the observed diffusion length dependence on voltage are discussed.
We are reporting for the first time, lasing operation at room temperature (RT) with a low threshold current density (Jth) in novel direct band-gap Ga(NAsP)/GaP QW lasers. A carrier leakage process is found to dominate the temperature dependence of the laser threshold current.
Influence of damage by neutrons introduced in semi-insulating GaAs detectors is studied by current-voltage measurement and Photo-Induced Current Transient Spectroscopy (PICTS). Significant rise of the reverse current is observed at neutron fluencies exceeding 1013 ncm-2. The PICTS is used for evaluation of deep-level states in detector structures prior and after neutron bombardment. Formation of a...
Studies of tin (Sn) whiskers have emphasized the role of intermetallic compound formation at the tin-substrate interface, which induces a high compressive stress state in the film, thought to be a necessary condition for Sn whisker growth. The goal of this work was to determine if whisker growth is possible from films where intermetallic compounds are largely absent. Thin films (~ 1600 Å) of Sn were...
The innovative basic punchthrough theory for the unipolar-CMOS is for the first time presented and the first unipolar-CMOS inverter has been fabricated successfully by using the 90nm technology developed in Taiwan National Nano Device Lab. The severe scaling issues with silicon can be further use and no more serious. The low-performance P-FETs can be get rid of and switch much faster both for high-electron-mobility...
The direct current pumping from highly doped silicon microwire to InP-based III-V active layer for spontaneous light emission was realized by air ambient plasma-assisted direct bonding. The semi-conductive properties of the hetero-integration and the effects of plasma-assisted bonding process on InGaAsP multiple quantum well (MQW) were measured and discussed. The electrical pumping from silicon microwire...
We present the effect of active carrier concentration on the specific contact resistivity (ρc) of in-situ molybdenum (Mo) Ohmic contacts to n-type InAs. It is observed that, although the Fermi level pins in the conduction band for InAs, the contact resistivity decreases with the increase in InAs active carrier concentration. The lowest ρc obtained through transmission line model measurements was (0...
Si-doped AlSb polycrystalline films were grown on silex by magnetron co-sputtering. The conducting type, Hall mobility and carrier concentration of the films were determined. The films appear to be p-type indicating Si is shown to be predominantly an acceptor in AlSb, and holes as dominant charge carriers. Scanning electronic microscope (SEM) shows that prepared film is uniform and compact. The conductivity...
GaN is a promising material for neutron detection applications, with advantages over Si and GaAs. GaN films doped with Gd have been grown by MOCVD and investigated for their feasibility for neutron detection. The films were structurally and electrically characterized through HRXRD and Hall effect measurements. Alpha particle luminescence of both doped and undoped films was used to investigate gamma...
We demonstrated the first laser and photodetector integrated triplexer on silicon with a compact size of 1mm*3.5 mm. The 3 dB bandwidth for the 1310 nm laser and 1490/1550 nm photodetector were measured to be 2 GHz and 6 GHz respectively.
We have developed an epitaxial layer transfer technique for THz devices. Here we report the fabrication and the characterization of a THz photomixer on a silicon substrate. The active part of the photomixer is a low-temperature-grown GaAs mesa which has been transferred and layer bonded onto a Si substrate. The preliminary measurement of the THz signal generated in a photomixing configuration at 0...
In this paper, we present the temperature dependent microwave noise measurements and modeling of AlGaN/GaN HEMTs on Si substrate over a wide temperature range from -50 to 200degC. The typical noise parameters including minimum noise figure (NFmin), noise equivalent resistance (Rn), optimum source reflection coefficient (Gammaopt) and associate gain (Ga) at different temperatures were measured and...
High quality, low defect GaAs virtual substrates on Si, produced by the aspect ratio trapping growth technique, have been used for the fabrication of n+GaAs/n+InGaAs/p+GaAs Esaki diodes. All epitaxial layers were grown by reduced-pressure chemical vapor deposition/metalorganic chemical vapor deposition , instead of the molecular beam epitaxy technique commonly used for most high performance Esaki...
Using measurement techniques and appropriate models for III-V semiconductor compound transistors we have implemented a large signal model for a commercial LDMOS transistor. Based on this model a 4 Watt UHF class AB power amplifier was simulated and evaluated. The power amplifier was characterized using an aluminum test bench and microstrips. Experimental results shown an output power of 36.3 dBm for...
Technology of neutron detectors based on semi-insulating (SI) GaAs covered by high density polyethylene (HDPE) is described. The detectors are tested for reactor neutron damage and detection of alpha. Fabricated detectors are applied for registration of neutrons emitted by hot plasmas. To increase sensitivity and achieve insensitivity to background signals from soft X-and -rays four detectors connected...
Low frequency noise (LFN) is a reliable diagnostic tool to evaluate and locate the defects of a technology. In this study, LFN is used to assess effects of deuterium (H+ ions) in diffusion condition on the robustness of 0.25 *2*75 mum2 gate area AlGaN/GaN high electron mobility transistors (HEMT) grown on Si substrate. H+ ions are diffused from the above AlGaN/GaN layer through the AlGaN/GaN interface...
We report on the temperature dependent properties of GaNAsP/GaP-based SQW lasers. While the radiative component of threshold is relatively temperature stable, the threshold current increases strongly with temperature and is attributed to a leakage process.
In this article, a fiber with a nano-semiconductor layer locating between the Si-core and Si-cladding is fabricated. The improving technique called MCVD which is one of the important preparations of optical fiber is adopted. InP is chosen as the semiconductor and a fiber with a nano-layer is received, the thickness of which is only 10 nm. On the basis of this structure of the fiber, it is call as...
A compact photocurrent and electroluminescence imaging system has been developed using high precision linear translation stages and an electronic signal detection based on a low-cost PC sound card and a simple front-end electronics including a voltage controlled oscillator. The system has been used for the characterization of the photoresponse and of the light emission properties of crystalline silicon...
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