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Since through silicon vias (TSVs) emerges as the key technology and essential components to enable 3D integration, it is of great importance to explore and investigate its electrical characteristics. In this paper, a 2-tier signal-ground TSV is studied in frequency domain using 3D full wave field solver. The impact of physical configurations and materials on TSV electrical performance is evaluated...
The main challenge of Low Temperature (LT) Solid Phase Epitaxy (SPE) is the dopant deactivation during post activation anneal. For the first time, we demonstrate that, for LT-SPE activated Boron (B) on thin SOI substrates, B deactivation can be well controlled during post anneal at 400 °C–600 °C. This is achieved by locating the preamorphization induced end of range defects close to the Buried OXide...
Annealing of 3D architectures is one of the major challenges for current and next generation devices for various applications ranging from sensors, microprocessors or high density memories. One of the most promising solutions is Laser Thermal Annealing (LTA), an ultrafast and low thermal budget process already adopted in production for passivation of BackSide Illuminated CMOS Imaging Sensors (CIS)...
As semiconductor performance improvements through device scale-down becomes more difficult, 3D chip stacking technology with TSVs (Through Silicon Via) is becoming an increasingly attractive solution to achieve higher system performances by way of higher bandwidth, smaller form factor and lower power consumption. Such increase in performance using TSV aided 3D chip stacking technology applies not...
We proposed a novel Chip-to-Wafer (C2W) 3D integration approach using an alignment template and well-controlled wafer-level bonding. With an alignment template as position reference, this approach can align all the top chips to the template corners and bond them to the host wafer simultaneously, resulting in high throughput, few thermal cycles, precise alignment accuracy, and independence of commercial...
Since interconnection has become an essential component in high-speed integrated circuits (IC), it is of great importance to explore and investigate its electrical characteristics. This paper is summarized our recent work on high-speed interconnection in both 2D planar IC and 3D IC. First, we have build up distributed circuit model for differential microstrip line and vias system, then crosstalk of...
Detailed, physics-based three-dimensional (3D) technology computer-aided-design (TCAD) device model, coupled in mixed-mode with external load circuit and parasitics, enabled accurate simulation of single-event effects (SEEs) in nonplanar silicon-on-insulator (SOI) Multi-Gate Field Effect Transistors (MuGFETs) or FinFETs. We show the importance of correct device physics models, including mobility in...
We propose an extension and improvement to reliability predictions in epitaxially grown 3C-SiC cantilever beam MEMS by utilizing dynamic Raman spectroscopy to allow the gathering of Weibull fracture test data to be done directly on devices thereby taking account of actual geometrical tolerances, dynamic load conditions and effects from the microfabrication process due to high lattice and thermal mismatch...
We present a newly developed model for Tunnel-FET (TFET) devices capable to describe band-to-band tunneling (BtBT) as well as off-equilibrium transport of the generated carriers. BtBT generation is implemented as an add-on into an existing Multi-subband Monte Carlo (MSMC) transport simulator that accounts for the effects of alternative channel materials and high-κ dielectrics. A simple correction...
The 3D IC integration using through-silicon-vias (TSV) has gained tremendous momentum recently for industry adoption. However, as TSV involves disruptive manufacturing technologies, new modeling and design techniques need to be developed for 3D IC manufacturability and reliability. In particular, TSVs in 3D IC may cause significant thermal mechanical stress, which not only results in systematic mobility/performance...
This paper aims to make a full evaluation of inductor performances integrated in multi layer FO-WLP technology. Technology interest for radio frequency passives is first discussed. The inductor offer, composed of four different inductor families, is described including more than 200 different inductors that were fabricated. Measurements exhibit promising quality factors for such packaging technology,...
While possessing the potential to replace conventional air-cooled heat sinks, inter-tier microchannel liquid cooling of 3D ICs also creates the problem of increased thermal gradients from the fluid inlet to outlet ports [1, 2]. These cooling-induced thermal gradients can be high enough to create undesirable stress in the ICs, undermining the structural reliability and lifetimes. In this paper, we...
The integrated 3D configuration considered in this study includes a silicon die on one side of an organic interposer and a different die on the other side. The three parts are from three different design environments, each has its own database and description language not compatible with the other two. The incompatibility triggered a search for a new methodology for the physical verification of the...
Three dimensional integrated circuits (3D ICs) have attracted much interest in the recent past, because of their capabilities for more efficient device integration and faster circuit operation. 3D integration relies on through silicon via (TSV) interconnection and interlayer bonding between the silicon layers. Because 3D IC is vertically stacked, higher temperature as well as temperature concentration...
To estimate the simultaneous switching noise (SSN) on the three dimensional VDDQ power distribution network (3D VDDQ PDN) in a TSV-based GPU system, the PDN impedance (ZPDN) and the pull up impedance (Zpull-up) of the VDDQ PDN in the GPU system were first estimated and analyzed. The GPU system consisted of a GPU, quadruple-stacked DRAMs, a silicon interposer and an organic package. The impedance estimation...
Power supply impedance of power distribution network (PDN) for a 3D system-in-package (SiP) has been investigated. The 3D SiP consisted of 3 stacked chips and an organic package substrate. These three chips were a memory chip on the top, Si interposer in the middle, and a logic chip on the bottom. The size of each chip was the same, and 9.93 mm by 9.93 mm. A large number of through silicon vias (TSV's)...
Through silicon vias (TSV) are critical vertical interconnects in 3D IC. We comparatively studied the signal integrity of different designs of TSVs both existing and new in a single die up to 20 GHz. For TSVs in multiple die stacking, we proposed to use the cascaded scattering matrix approach for their signal integrity analysis. The results are validated against those from full-path simulation. Compared...
Three-dimensional (3D) integration technologies including a new 3D heterogeneous integration of the super-chip are described. In addition, the reliability challenges such as the mechanical stress/strain and Cu contamination are discussed. Cu TSVs with the diameter of 20-μm induced the maximum compressive stress of ∼1 GPa at the Si substrate adjacent to them after annealed at 300°C. Mechanical strain/stress...
In this paper, electrical characteristic of TSV (Through Silicon Via) is analyzed. Firstly, equivalent circuit model of TSV is summarized. Modeling and electrical analysis of TSV is conducted, in which TSVs with ideal and non-ideal profiles are compared. And then, multi-TSV configuration in silicon interposer is modeled and analyzed. Capacitive and inductive coupling between TSVs are simulated. With...
In this paper, we report on the development of Cu pillars and their impact on the subsequent thinning process for 3D applications. As the Cu pillars have a height of tens of microns (typically between 50–100µm), controlling the total thickness variation (TTV) after wafer thinning is becoming even more challenging. The Cu pillars are processed after completion of the Back End of Line (BEOL) with a...
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