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The 4096 bits wide-bus three-dimensional integration device using through-silicon-vias (TSVs) has been designed and fabricated as a demonstrator for power integrity such as power distribution network (PDN) impedance and simultaneous switching output (SSO) noise characteristics. Anti-resonance peak of total PDN impedance was extracted at around 80 MHz. This result was well coincident with maximum SSO...
The this paper deals with the analysis of power distribution network (PDN) impedance and simultaneous switching output buffer (SSO) noise for a 3D system-in package (SiP) with 4k-IO widebus structure. The 3D SiP consisted of 3 stacked chips (a memory chip on the top, Si interposer in the middle, and a logic chip) and an organic package substrate. More than 4096 of through silicon vias (TSV's) were...
Simultaneous switching output buffer (SSO) noise and impedance of power distribution network (PDN) for a 3D systemin package (SiP) with 4k-IO widebus structure has been investigated. The 3D SiP consisted of 3 stacked chips and an organic interposer. These three chips were a memory chip on the top, a silicon interposer in the middle, and a logic chip on the bottom. The size of each chip was the same,...
A 3D stacked system-in-package (SiP) with a widebus structure is expected to have large SSO noise compared with conventional memory devices with small number of IOs. Then, Power supply impedances for a 3D SiP with a widebus structure has been investigated including stacked chips, an organic substrate, and a board. The 3D SiP consisted of 3 stacked chips and an organic substrate. These three chips...
Power supply impedance and simultaneous switching output (SSO) noise for a 3D system-in-package (SiP) with a wide bus structure have been investigated. The 3D SiP consisted of 3 stacked chips and an organic package substrate. These three chips were a memory chip on the top, Si interposer in the middle, and a logic chip on the bottom. The size of each chip was the same, and 9.93 mm by 9.93 mm. More...
Power supply impedance of power distribution network (PDN) for a 3D system-in-package (SiP) has been investigated. The 3D SiP consisted of 3 stacked chips and an organic package substrate. These three chips were a memory chip on the top, Si interposer in the middle, and a logic chip on the bottom. The size of each chip was the same, and 9.93 mm by 9.93 mm. A large number of through silicon vias (TSV's)...
Power supply disturbance excited by simultaneous switching output (SSO) circuits or core circuits is a serious issue in a system-in-package (SIP), especially in 3D stacked die package, because much more I/O circuits and core circuits excited simultaneously in synchronized with clock edges than the case of single die package. Therefore, decoupling schemes in such SiP's must be carefully designed including...
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