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In this paper, we have investigated the non-ballistic properties of Silicon Nanowire Field Effect Transistor (SiNW-FET) which has significant potential in future nanoelectronic applications. Our first goal is to study the effects of non-ballistic properties like elastic scattering and strain effect. The study reveals that elastic scattering decreases the drain current whereas tensile strain tends...
Silicon nanowire (SNW) field-effect transistors (FETs) have proven an emerging highly sensitive bio/chemical sensor due to their huge surface-to-volume ratios. However, fabrication of SNWs with both high output and low cost is still challenging. This paper presents a new fabrication method using sidewall mask technology. By depositing a conformal thin film on a sacrificial pattern and removing the...
Stringent requirements on higher power density and efficiency for power electronics converters in applications such as server/telecom power systems and industrial motor drives necessitate transformative changes in power electronic architecture as well as replacement of Si based FETs with wide bandgap devices. For power-factor-correction (PFC) circuits, the path for greater power density necessitates...
In the last decade, the research on terahertz imaging systems in CMOS has attracted extensive attention and gained rapid progress. Detection theory and performance indicators are first analyzed in this paper. System structures are then compared from three aspects. Finally, research progresses are reviewed and certain research directions are indicated on account of existing problems.
3D Finite Element ensemble Monte Carlo simulations with integrated 2D Schrödinger Equation quantum corrections are employed to forecast the performance of scaled Si gate-all-around (GAA) nanowire (NW) FETs with unstrained/strained channel. The results from the 3D MC toolbox were compared against experimental I-V characteristics of a 22 nm gate length GAA NW FET with excellent agreement. The NW FET...
A DDR4 transmitter (TX) for direct-attach memory on a processor chip is presented as well as the design of the associated low-dropout linear voltage regulators (LDO) that generate the split-mode supply voltages for the thin-oxide protection of the TX output stages operated from the 1.2 V DDR4-supply. The TX uses AC-boost equalization. Signal-integrity (SI) simulations have shown that pre-emphasis...
We present a silicon nanowire-based field-effect transistor biosensor with Schottky barriers for highly specific and sensitive human α-thrombin detection. The active sensor area is decorated with thrombin-binding aptamers as receptor molecules. Each sensor chip is integrated into a microfluidic device for flow-through measurements. Instantaneous detection is provided by real-time monitoring of FET...
We present a THz heterodyne detector based on a single layer graphene field effect transistor (GFET) integrated with a bowtie antenna at 400 GHz. The heterodyne detection is achieved by coupling RF and LO signals quasi-optically to the same GFET. The down converted IF signal is extracted via a coplanar stripline connected to the GFET source and drain terminals. The measured IF bandwidth is 5 GHz.
The unique monoatomic structure of graphene makes it as an enticing material to be used in sensitive detection of analytes in biosensing applications. Implementation of graphene as a conducting channel in graphene based field effect transistor (GFET) allows ultrasensitive detection of analytes in a targeted sample. Herein, we have investigated the transfer characteristics of GFET for biosensing applications...
THz radiation can couple in various undesired ways to THz detectors, e.g. through wires or contact pads, aggravating calculation of sensible values for the device responsivity. We therefore investigate coupling of THz radiation to antenna-less large area field-effect transistors with dimensions in the range of the THz spot size proving that only a very small fraction of power is coupled through the...
Graphene is an appealing material due to its distinct electronic, mechanical and optical properties. Recently, graphene based field effect transistor (GFET) have been rapidly developed and show the potential applications.
In this paper, device performance metricsofjunctionless (JL) and dopingless (DL) field effect transistors (FETs) for analog and radio-frequency application are evaluated using technology computer added design (TCAD) tool. It is observed that the DL-FET offers 17% enhancement in ON-current and achieves 1.5 times cutoff frequency along with 10 dB improvement in intrinsic voltage gain in comparison to...
Self-heating effects (SHEs) were studied on the vertical nanoplate-shaped gate-all-around (GAA) FETs (vNPFETs) as a target of 5nm node technology. The thermal properties are compared between face-up and face-down configuration. Decreasing the channel width is vulnerable to both configurations in terms of SHEs due to the reduced area of heat dissipation. It is well known that the SHE is alleviated...
Since the first experimental demonstration of a field-effect transistor (FETs) based on a single-layer (SL) MoS2 channel [1], this material as well as other members of the transition metal dichalcogenide (TMD) family have received a wide attention as potential replacement for Silicon at the end of the semiconductor roadmap. While the electronic characteristics of TMD FETs have been extensively investigated,...
Size dependence of random telegraph noise (RTN) in ultra-narrow silicon nanowire transistors with width far less than 10nm is experimentally measured and statistically analyzed for the first time. Single-trap RTN amplitude shows nearly exponential distributions, which reaches 170mV at 1.8% quantile for the narrowest transistor. The origins of long tail distributions and strong size dependence are...
This paper gives an overview of several approaches utilizing new parameters and effects, which may be useful for improving the calibration and functionality of nanowire (NW) field-effect transistor (FET) biosensors. We discuss the basic principles of high-speed low-noise Si NW FETs for biosensor applications. We explain the results of a capacitance coupling effect as a consequence of liquid-gate and...
An experimental method was introduced for understanding the exact relationships among polarization, coercive field, and electric field across the ferroelectric layer. They characterized the ferroelectric properties closed inside the metal/ferroelectric/insulator/semiconductor gate stacks. Using the method, we found that N2-dominant-gas annealing process was effective for improving the ferroelectricity...
This paper presents a low-cost and high-precision pH sensor using silicon nanowire (SiNW) array. With the help of traditional microfabrication technology, low-cost as well as highly controllable SiNW array was fabricated. After functionalized with APTES solution, SiNW array shows rapid and reliable response to pH value. With excellent linearity and repeatability, accuracy of the sensor can be achieved...
This paper reports on the first integration of silicon nanonet into long channel field effect transistors using standard optical microelectronic methods. The electrical characteristics of these devices constituted by randomly oriented silicon nanowires are also studied. Compatible integration on the back-end of CMOS readout and promising electrical performances open new opportunities for sensing applications.
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