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Three dimensional silicon integration technologies are gaining considerable attention as the traditional CMOS scaling becoming more challenging and less beneficial. The advanced packaging solutions based on thin silicon carrier are being developed to interconnect integrated circuits and other devices at high densities. A key enabling technology element of the silicon carrier is through silicon via...
This paper presents a new type of air-humidity sensing element based on heat transfer mechanisms such as conduction and convection. The sensing element is a single floating resistor of doped polysilicon and operates in two phases: thermal actuation and thermal sensing. As actuator, a convenient biasing current is applied to the resistor leading to self-heating by Joule effect. As sensor, the resistor...
The presented work, reports a 2D thermal model for a PCM cell employing stacked Ge-chalcogenide (Ge2Se3) and Sn-chalcogenide (SnSe) layers as phase change materials. The thermal behavior exhibited by the PCM cell upon melting of the Ge2Se3 layer is explored at the 130nm, 65nm and 45nm technology nodes. The suitability of doped polysilicon, TiN and TaSiNx as potential heater materials with the purpose...
In this paper a new 'via-first' technology which is compatible with CMOS high temperature steps will be presented. This technology is based on filling high aspect ratio trenches with doped polysilicon and thinning the silicon after active device bonding onto a wafer carrier. The initial morphological requirements are described and different designs of TSV are presented. The complete technology for...
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