The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Solder paste is very commonly used in high power assembly package. The application of solder paste is to form sold joint between die and copper clip after reflow. After solder paste application, wire bond process is followed. The wire was bonded between copper pad and die top surface to form another connection. The cleaning of Cu pad surface and die surface could affect the reliability of wire bonding...
The challenge of manufacturing firm today is to maintain competitive advantage in rapid market and customer requirements change environment. Respond to the problems quickly, accurately with breakthrough ideas and make decision from available various alternatives will be crucial. TRIZ-PUGH model which incorporate between TRIZ methodology and Pugh's matrix is created. TRIZ is the systematic methodology...
The objective of this study is i) to optimize a new nano solid phase, Ag-Sn thin-film bonding system for wafer-level 3D-stacking for 3D ICs, and ii) to clarify its bonding mechanism. As reported in our previous study, we achieved bonding at a much lower temperature (180°C), with lower load (0.4MPa) and much shorter time (5 min) compared to Cu-Cu direct bonding. Moreover, the bonded interface had high...
In this work the investigation of copper-solder interface with Atomic Force Microscope (AFM) is presented. Multiple contact and tapping-mode AFM images were made on presoldered cross-sectional SAC (Sn-Ag-Cu) solder joint samples. The formation of oxide layer was observed and the structural properties of oxide were monitored in time. Our aim was to determine the maximum idle time between the sample...
We have investigated the diffusion kinetics of Hf in TiN/HfSiO gate stacks. The Hf upward diffusion is found to be independent of interfacial SiO2 growth, but depends on the amount of oxygen in the gate stacks. It is also revealed that Hf diffusion into TiN electrode occurs at above 650°C and leads to high-k degradation.
The composition and thickness of surface oxide of solder particles has a direct effect on adhesion and electrical resistance of soldering joint and resultant the quality of interconnect and the reliability of packaged system. Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) were used...
A fluxless Cu/Sn SLID bonding process was demonstrated by using intermetallic Cu3Sn layer as the oxidation barrier for Cu interconnects. Oxidation behavior of intermetallic Cu3Sn was confirmed by aging Cu and multilayer Cu/Cu3Sn films at elevated temperatures in ambient air, and measuring the oxidation level by energy dispersive x-ray microscopy (EDX). The strength of bonded interconnects were characterized...
This paper considers the influence of 1) humidity and 2) acidic humidity on the growth of Sn whiskers. Sn whisker morphology was observed over a six-month period. The results show that the electroplated surfaces exposed to pure humidity are populated with Sn whiskers dimensionally smaller than surfaces exposed to acidic humidity. Variables analyzed include surface condition, Cu-Sn inter-metallic formation...
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
ldquoDevelopment for advanced thermoelectric conversion systemsrdquo supported by the new energy and industrial technology development organization (NEDO) has been successfully completed as one of the Japanese national energy conservation projects. Three types of the cascaded thermoelectric modules operating up to 850 K in high electrode temperature and two types of Bi-Te thermoelectric modules operating...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.