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For high temperature automotive application, IC products are required to pass stringent high temperature storage stress test (e.g. 5000hrs at 150 deg C), hence requires reliable wire bonds. Such requirement is especially challenging with fine pitch Au & Cu wire bond (e.g. bond pad pitch <; 70um and bonded ball diameter <; 58um), more-so on low k wafer technology with bond-over-active requirement...
SnCu2-4Ni1-2 as a lead-free solder was prepared from both sulfate and chloride plating solutions by galvanostatic electrodeposition. Current-potential polarizations for both plating baths were obtained with their respective deposition rates measured. Characterizations including SEM, EDX, and XRD were carried out to obtain relevant materials properties.
Polycrystalline films of semiconducting Cu(In1-xGax)Se2 (CIGS) quaternary alloy, one of the promising materials for photovoltaic applications, have been prepared by means of chemical spray pyrolysis (CSP). Copper, Indium and Gallium metal chlorides and Selenourea are used as constituent elements to prepare spray solution. Single phase CIGS films with chalcopyrite structure have been successfully grown...
The surfaces of optoelectronic materials such as silicon, GaAs, nitrides and oxides are known to be very difficult to bond with low melting point solders (<;300°C). Small portion of active elements (3.1~4.1wt% Ti and 0.2% Ce) added into conventional SnAg solder could improve its solderability with inorganic material surfaces. In this work, some bonding experiments using active solder containing...
Tiny defects were observed by SEM (scanning electron microscopy) on pad surface. In order to identify the root cause, TEM (transmission electron microscopy) and EDX (energy dispersive X-ray) techniques were used to do failure analysis. The SEM images showed that the tiny surface defects were pits. Higher Cu concentration at pits area was detected compared with normal area based on the EDX data. TEM...
The wetting behavior of Sn-Ag-Cu solder ball on nickel pad has been studied. SEM and EDX were employed to analyze the solder joint interfacial microstructure. Three zone-reactive wetting ring structure was found at the interface. To further study this kind of structures, solder ball attachment (SBA) and surface mount technology (SMT) were performed to prepare more samples. Experimental results show...
Reaction of indium (In) and silver (Ag) during the electroplating process of indium over thick silver layer was investigated. It is found that the plated In atoms reacts with Ag to form AgIn2 intermetallic compound at room temperature. Indium is commonly used in electronic industries to bond delicate devices due to its unique ductility and low melting temperature. In this study, copper (Cu) substrates...
Soldering with lead-free tin-based solder alloys demands substantially higher processing temperatures compared to conventional tin-lead solders, resulting in both significantly greater growth rates of Intermetallic Compounds (IMCs) and dissolution of surface finish layers. In this paper, the interfacial reactions between a new lead-free solder composition, eutectic Sn-0.7Cu- 0.4Co, and Electroless...
To enhance the ability of lead-free solder joint to resist failures induced by mechanical impact and shock, some researchers have introduced low-Ag lead-free solder. In this study, the formation and evolution of IMC, the fracture morphology and performance of solder joint between SAC 105 solder and Under Bump Metallization (UBM) have been studied after different temperature storage aging and multi-reflow...
Sn-Sb alloys are potential solders for replacement of high-Pb solders because of their high melting temperature in lead-free solders. However, Cu substrate is extremely dissolved by the Sn-Sb binary alloy during the high temperature soldering process, which will cause serious reliability problem of the solder joint. Based on this critical issue, we designed a new high temperature lead-free Sn-10Sn-5Cu...
A fluxless process of bonding silicon to Ag-cladded copper using electroplated In-Ag multilayer structure is developed. The Ag cladding on the copper substrate is a stress buffer to deal with the large mismatch in coefficient of thermal expansion (CTE) between semiconductors such as Si (3 ppm/degC) and Cu (17 ppm/degC). To manufacture Ag on copper substrate, two techniques are developed. The first...
In this paper, we experimented the glowing and heating phenomenon at the contacts of copper wires, and studied the breeding process, the growing characteristics of copper oxide according to the diameter of copper wires and AC current. The surface structure, crystalline structure, compositions and calory variation of Cu2O that grew at the contacts of two copper wires were analyzed by using scanning...
In this paper using an electroplating technique, an Ni/Cu structure was fabricated on multicrystalline n+Si solar cells to develop an inexpensive metallization method without the degradation of the cell performance. By the application of an ultrasonic system one can obtain a film with the lower surface roughness and the higher quality. The electrical resistivity of the electroplated Ni/Cu was investigated...
Higher yield loss caused by Ml-bridge was found in sub 130nm logic products with multi-level copper interconnect. With the help of FIB, SEM and EDX, the organic surface particle induced during W CT-CMP was considered to result in the Ml-bridge, and then the mechanism of the Ml-bridge was analyzed. Through partition check on post CMP cleaner to reduce the organic particle contamination, it was found...
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