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ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage characteristics showed a typical ohmic behaviour after contact annealing, reflecting the influence of...
The CdS nanowires array were grown by thermal evaporation technique on Au patterned silicon substrate. The SEM and TEM are used to analyze surface morphology as well as crystallinity of the as-synthesized CdS nanowires film. The field emission properties of CdS nanowires array were investigated in a parallel plate diode configuration. A high current density of ~ 68 μA/cm2 has been drawn at the applied...
This paper reports on the preparation of nano-structured of MgxZn1-xO thin films by sol-gel spin coating method which will be used as a template layer to grow carbon nanotubes. The MgxZn1-xO films were deposited on Pt/Si (100) substrates. In this work, we focused on the effect of sol aging and Mg content on the film structure and resistivity. Sols with Mg content of x = 0.1, 0.3 and 0.5 were subjected...
The thermal evaporation technique was used to deposit the zinc (Zn) films on Si(111) substrates. ZnO thin films were obtained in an inexpensive and simple way by thermally oxidizing granulated Zn films at 900°C in air for 1 hour without any catalyst. ZnO thin films have a hexagonal wurtzite structure. The structural and optical characteristics of ZnO thin films samples were investigated by scanning...
We present a novel structure of the ZnO thin-film with high haze value. The thin-film was composed by appropriate amount of ZnO nanoparticle, ZnO hollow nanoparticle and ZnO sol-gel annealed at 500??C for 1 h. Therefore, the ZnO and ZnO hollow nanoparticle can be well-bounded in the ZnO thin-film. In this experiment, the haze of novel ZnO thin films are over 80% in visible range. It will be used for...
The aim of the work was to study the effect of postgrowth thermal annealing processes on the characteristics of the zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering. The growth temperature of the ZnO thin films was fixed at 230degC and then the samples were annealed in dry air atmosphere at 800degC for one hour. The surface of the ZnO samples was analyzed with a scanning...
ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties...
We deposited ZnO thin Alms on single-crystal p-type Silicon <100> substrates by direct current (DC) magnetron sputtering method. The ZnO thin films deposited at room temperature by DC magnetron sputtering were annealed, when powers were 60, 90 and 120W, and temperature were 400, 500, 600 and 700 degC respectively. Analyzed microstructure of the ZnO thin films by X-ray diffraction (XRD).Observed...
Atomic layer deposition (ALD) of aluminium, zinc and titanium oxides into high aspect ratio electrochemically etched pores is described. Macroporous silicon was fabricated by electrochemical etching. Aspect ratios of 50:1 were routinely obtained. commercial anodisc alumina pores were used for reference. ALD thin films Al2O3, TiO2 and ZnO were deposited in the pores. The results were studied with scanning...
Aluminum-doped zinc oxide (ZnO:Al) films were deposited by RF magnetron on p-Si(111) substrates to fabricate Al-doped/p-Si heterojunctions. The structural and electrical properties of the Al-doped ZnO films were characterized by X-ray diffraction spectroscopy (XRD), scanning electron microscopy (SEM) and Hall effect measurement, respectively. The results show that Al-doped ZnO thin films have high...
ZnO(:Al) layers are deposited by expanding thermal plasma (ETP) CVD inherently showing the necessary textured surface morphology required for effective light trapping resulting in a high quantum efficiency of thin film solar cells. Surface texture and morphology have been studied by AFM and SEM, optoelectronic properties are derived from spectroscopic ellipsometry combined with reflection and transmission...
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