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ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties...
We deposited ZnO thin Alms on single-crystal p-type Silicon <100> substrates by direct current (DC) magnetron sputtering method. The ZnO thin films deposited at room temperature by DC magnetron sputtering were annealed, when powers were 60, 90 and 120W, and temperature were 400, 500, 600 and 700 degC respectively. Analyzed microstructure of the ZnO thin films by X-ray diffraction (XRD).Observed...
Aluminum-doped zinc oxide (ZnO:Al) films were deposited by RF magnetron on p-Si(111) substrates to fabricate Al-doped/p-Si heterojunctions. The structural and electrical properties of the Al-doped ZnO films were characterized by X-ray diffraction spectroscopy (XRD), scanning electron microscopy (SEM) and Hall effect measurement, respectively. The results show that Al-doped ZnO thin films have high...
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