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In this paper, the graphene nanoelectronics progress in synthesizing wafer-scale monolayer-controlled graphene and fabricating high-speed graphene FETs (GFET) with the highest value reported cut-off frequency (f??) approaching 100 GHz was reported. Epitaxial growth was investigated to produce wafer-scale, high-quality graphene on SiC substrate. Low-energy electron diffraction microscopy, electron...
A self-consistent electrothermal transport model that couples electrical and thermal transport equations is established and applied to AlGaN/GaN device structures grown on the following three different substrate materials: 1) SiC; 2) Si; and 3) sapphire. Both the resultant I-V characteristics and surface temperatures are compared to experimental I -V measurements and Raman spectroscopy temperature...
Polycrystalline diamond films have unique properties for applications in advanced electronic devices. Undoped and doped polycrystalline diamond films are deposited on p type Si (100) and n type SiC (6H) substrates at the low surface deposition temperatures of 370deg - 530degC using a microwave plasma enhanced chemical vapor deposition (MPECVD) system in which the surface temperatures during deposition...
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