In this paper, the graphene nanoelectronics progress in synthesizing wafer-scale monolayer-controlled graphene and fabricating high-speed graphene FETs (GFET) with the highest value reported cut-off frequency (f??) approaching 100 GHz was reported. Epitaxial growth was investigated to produce wafer-scale, high-quality graphene on SiC substrate. Low-energy electron diffraction microscopy, electron diffraction, Raman spectroscopy, and AFM were used for analysis. It was observed that the 350-nm-gate exfoited GFET yields the highest cut-off frequency value reported for any graphene devices to date. Devices on high quality epitaxially-grown graphene (1-2 layers) also exhibit the room temperature Hall mobilities up to 1450 (gated) and 1575 (ungated) cm2 V-1s-1 and the record high epitaxial GFET f??= 24 GHz with LG=500 nm. IBM has demonstrated GFET performance well above Si MOSFET f??-Lg trend shown in 2008 International Roadmap for Semiconductors (ITRS).