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Transparent and electrically conductive (TCO) thin films of ZnO:Al, ZnO:Ga and ZnO:Sc, used in solar cells as well as optoelectronic devices, have been successfully deposited by rf magnetron sputter deposition using ZnO(98%) / X2O3(2%) ceramic target, X ∈{Al, Ga, Sc}, in the inert atmosphere of argon. In this contribution we focused on the changes in physical properties and their comparison in dependence...
In this paper, Ti-doped ZnO TFTs on SiO2/Si substrates by simultaneous RF sputter of Zn and DC magnetron sputter of Ti are successfully fabricated. With undoped ZnO TFTs, as-grown Ti-doped ZnO are compared with post-annealed Ti-doped ZnO TFTs in the furnace at O2 atmosphere of 300 °C. As the annealing time increases, the electrical characteristics such as sub-threshold slop (SS) and on/off current...
CdS polycrystalline thin films were fabricated by magnetron sputtering and the influence of substrates, sputtering powers, pressures, and substrate temperatures on the structure of thin films is investigated. The films deposited on substrates of glass, quartz, SnO2: F and p-type single silicon are hexagonal phase and they grow preferentially along (002) planes. As the radio-frequency power and substrate...
ZnO thin films have been deposited on (0001) sapphire substrates using potassium (K) as a dopant by radio frequency magnetron sputtering technique. The electrical properties, crystallinity and surface morphology of as-grown ZnO films are investigated by Hall measurement, X-ray diffraction and atom force microscopy. Results show that the structure and electrical properties of p-K:ZnO films are strongly...
Cuprous oxide (Cu2O), a direct band gap semiconductor with energy band gap about 2.0eV, has been regarded as one of the most promising materials for application in photovoltaic cells. Nanocrystalline cuprous oxide thin films has been deposited on glass and Si substrates by dc reactive magnetron sputtering method. The effect of substrate temperature and dc power on the nanocrystalline cuprous oxide...
Nitrogen doped zinc oxide (ZnO:N) thin films were prepared by RF diode sputtering from ZnO target in different ratio of Ar/N2 gas mixture. The p-type features of ZnO:N thin films have been caused by the incorporation of the nitrogen acceptor NO into ZnO what was proven by second ion mass spectroscopy (SIMS) analysis. The minimum value of resistivity of 790 Omegacm, a Hall mobility of 22 cm2V-1s-1...
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