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The semiconductor packaging technology trend for electronic products continues to achieve greater miniaturization and higher functionality. Thinner profile chip scale packaging (CSP), such as flip chip CSP (fcCSP), with increasing die complexities is a very important technology for next generation communication devices and internet of things (IoT) applications. Recently, integrated fan out wafer-level...
This paper designed a 1-Mb HfOx-based embedded Resistive Random Access Memory (RRAM) device with a one-transistor-one-resistor (1T1R) structure, and systematically investigated its working temperature range. It noted that this embedded RRAM macro has a 1.6X working temperature range than previous design for some extreme environment. Using the peripheral-assisted technique, it can enable the error...
Downsizing the Cu signal traces in the redistribution layer is an effective approach to increasing the number of signal I/O lines and thereby greatly increasing signal processing performance between logic and memory chips in advanced fine-pitch packaging. Downsized Cu traces, however, are vulnerable to current stress, which degrades electromigration resistance. This is a serious problem in advanced...
This paper proposes an Active Thermal Control (ATC) method for MOS-gated power switches aimed at reducing temperature swing amplitude during operation. It leverages on the fact that thermal cycle amplitude of many actuation system components (such as power devices) has a large impact on the system reliability and lifetime. These figures can then be improved, which eases the adoption of electrification...
Research in the area of internet-of-things, cyberphysical-systems, and smart health often employ sensor systems at residences for continuous monitoring. Such research-oriented residential monitoring systems (RRMSs) usually face two major challenges, long-term reliable operation management and validation of system functionality with minimal human effort. Targeting these two challenges, this paper describes...
Silicon carbide (SiC) power MOSFETs have been becoming a strong alternative to silicon (Si) technology in high-voltage, high-frequency, and high-temperature applications. Despite their growing market share, limited field information is available regarding the aging facts under thermal stress and long term reliability of discrete SiC MOSFETs. In this paper, discrete SiC devices are thermally aged through...
A GaN-on-Si power device is a strong candidate to replace power components based on silicon in high-end market for low-voltage applications, thanks to its electrical characteristics. To maximize opportunities of the GaN device in field applications, a package technology plays an important role in a discrete GaN power device. A few specialized package technologies having very lower stray inductance...
This paper aims at reliability assessment of power semiconductor in hybrid DC switch. Design considerations of reliability issues are explained. Specific focus is given to a temperature-based condition monitoring technique via thermo-sensitive electrical parameters. VCE, td(off), and dVCE/dt of IGBT are presented as the indicator of junction temperature and calibrated. Comparative experiments with...
The formation of a high temperature die attach based on transient liquid phase (TLP) bonding is demonstrated using the binary system Ag-Sn in a sputtered thin layer approach. The microstructure and shear strength are compared to a foil based approach and show the successful replacement of the Sn foil and thus a simplification of the stack assembly. The diffusion of the Ag-Sn system is investigated...
Screening for optimal thermal performance of semiconductor wafers was developed based on a noninvasive thermo-reflectance technique. Temperature changes of the wafer surface, induced by a nanosecond pulsed laser absorbed into the near surface region, allows to extract critical thermal parameters such as thermal boundary resistances between epilayers or epilayers and substrate. These affect channel...
An analysis of the degradation occurred in RF life-tests of n-type MOSFETs operated from pulsed bench for a radar application in S-band is introduced. The analysis comes accompanied with experimental results, which are used to facilitate optimization of the robustness of Power RF MOSFETs. The recorded S-parameters before and after degradation allows the observation of the corresponding changes in...
The model based temperature control system examined in this paper increases the expected lifetime of IGBT power modules by decreasing the magnitude of temperature swings occurring during operation. In order to achieve this goal additional power losses are produced during low load conditions. This is carried out by presetting a reactive current. The three level neutral point diode clamped three phase...
With commercial operation of the first Chinese Maglev line, lifetime prediction of power devices in Maglev choppers becomes a crucial topic. This paper adopts a mission profile of one typical Maglev chopper for lifetime prediction. A test rig is built for the IGBT/Diode case temperature measurement. Using look-up tables of IGBT/Diode losses, an accurate electro-thermal model can be established. The...
In standard power cycling tests, forward conduction generates heat in the die and therefore the ther-momechanical stress in the package. In application, however, a significant part of the power losses are switching losses, so that the load current is lower than in standard power cycling test, for an equal temperature swing. A new concept for power cycling tests is presented, which allows the generation...
The mechanical properties and microscopic mechanism of the solder joint at cryogenic temperature were studied. The effects of temperature and Pb content on the reliability of the solder joint were investigated. The temperature has a significant influence on the shear strength of the solder joint. As the temperature decreases, the shear strength increases continuously, and the shear strength of solder...
Due to the promotion of the globalization of environmental protection process, some high reliability requirements of electronic products have to be passive to the backward compatible soldering process. Compared to the traditional Sn-Pb soldering process and the current mature Pb-free soldering process, the backward compatible soldering process is faced with a smaller process window and a higher process...
Induction motors are the mostly used electric machines in industry, due to their manufacturing features, which makes them more economical and robust. Consequently, it is of special interest to identify the most common faults present in these machines and develop reliable and cost-effective diagnostic tools to properly maintain them. In this context, the infrared thermography coupled with signal processing...
The smart electricity meter (SEM) is important in our life, so consumers and manufacturers pay more attention to its reliability. In order to evaluate the performance of SEM, we must spend a lot of time censoring its status. For example, if we want to assess to the SEM reliability, it may take several years at least according to the standards. So accelerated degradation testing (ADT) and accelerated...
The performance and low power requirement are becoming more and more challenging to fulfill for consumer product. On the opposite, a low failure rate at SoC level must be guaranteed to the end-customer. In that context, the insertion of in-situ slack monitor is known to be promising and efficient solution to manage the wear-out and more generally to minimize all margins related to manufacturing variations...
Commodity HardWare (CHW) is currently used in the Internet to deploy large data centers or small computing nodes. Moreover, CHW will be also used to deploy future telecommunication networks, thanks to the adoption of the forthcoming network softwarization paradigm. In this context, CHW machines can be put in Active Mode (AM) or in Sleep Mode (SM) several times per day, based on the traffic requirements...
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