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The RF noise properties of an advanced silicon bipolar technology are investigated. The influence of the lateral scaling on the noise figure is studied experimentally and compared with the predictions of conventional noise modeling. The potential of the technology is demonstrated by noise figures below 1 dB for frequencies up to 2 GHz and below 2 dB up to 7 GHz.
A simple, on-line method of extracting base resistance from measured S-parameters is presented. The measured base resistance correlates very well with fmax and noise parameter data.
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