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In this paper we present to the best of our knowledge a first ever reported CMOS BEOL-embedded lateral acceleration sensor obtained by simple isotropic inter-metal dielectric etching without any additional substrate etching steps. The device leverages the availability of thick metal and via layers of a 0.25 μm RF CMOS technology, featuring 7.36 kHz resonance frequency and differential capacitive sensitivity...
Lead zirconate titanate piezoelectric films were integrated into prototype one-dimensional array transducers. The geometry used for transducer arrays is a xylophone-bar type with a length:width aspect ratio greater than 5:1 in order to isolate the desired resonance modes. The PZT and remaining films in the stack were patterned using ion-beam etching and partially released from the underlying silicon...
Miniaturization of communication devices has initiated towards the integration of passive and active radio frequency devices on the single chip in order to reduce the size and cost of the systems. Recent advancement in three-dimensional fabrication technologies in conventional CMOS process is leading to a system-on-chip integration in which RF devices are among the candidates to be integrated. Microwave...
Clamped-clamped beam resonators are designed and fabricated in a 0.35 mum CMOS commercial technology, using a simple one-step mask-less wet etching to release the MEMS structures. The resonator, with a 22 MHz resonance frequency shows a Q value of 227 and 4400, when measured at atmospheric pressure and vacuum, respectively. This resonator is used as the main building block for filtering application...
This paper discusses a smart temperature sensor system that comprises of a high performance quartz tuning fork temperature sensor, interface with CMOS circuitry and control algorithm for reconfiguration. The ideal thermo-sensitive cut for quartz tuning fork resonators is analyzed with the theory. The specific cut quartz tuning fork was fabricated using photolithography and the etching technology....
This study presents a 3-Axis CMOS MEMS Accelerometer include novel post CMOS MEMS processes which is used to fabricate Z-axis capacitance accelerometer, utilizing processes combined with TSMC 0.35um 2P4M Standard CMOS Process and the method of wet etching process to etch the Aluminum metal structure in order to form the suspension structure composed of multi-layer metal and via layer. The sensing...
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