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This work describes experimental surge current evaluation for various layout design of 1.2kV 4H-SiC JBS diodes. The silicon carbide devices working at temperatures significantly beyond to those of silicon power devices need specific reliability tests, adapted to high temperature operation and/or high power density of this new generation of power devices. Actually, it is not possible to predict the...
Silicon Carbide (SiC) diodes are already commercially available since 15 years and have gained significant market share in power supply and solar converter applications. In the last few years, the SiC device family was enriched by switches. They become increasingly more important for differentiation of power converters in size, weight and/or efficiency. The dedicated material properties of SiC enable...
This paper presents the use of innovative high-voltage SiC diode technology in the development of a user configurable full-wave or half-wave rectifier bridge. The devices are of merged Junction-Barrier-Schottky (JBS) type to enable for optimum performance even in the presence of current surges, as demanded by the application. To contain the cost of the proposed solution, their packaging relies on...
This paper introduces a control method for Reverse-Conducting (RC-)IGBTs which reduces the control dead time of RC-IGBT inverters. Switching measurements with 6.5 kV RC-IGBTs concerning the applicability of the introduced control method and the effect of a load current direction change during the desaturation pulse are presented.
The softness and the switching losses are the key characteristics to evaluate the quality of the ultra voltage power diodes, especially for high frequency application. In this paper, we applied the Controlled Injection of Backside Holes (CIBH) structure to the 10kV SiC diode based on TCAD, by which, the softness and snap-off characteristics of the diode is significantly optimized compared with conventional...
In this paper different gate drive concepts to eliminate parasitic turn-on for SiC MOSFETs are discussed. Experimental results show a potential for lowering switching losses of SiC MOSFETs during fast switching operation, reduction of turn-off overvoltage across the bodydiode. Finally increased requirement on the gate drive unit are discussed.
In this study we introduce circuit-based metasurfaces that enable us to control scattering parameters at the same frequency. These metasurfaces are composed of conducting periodic units as well as several circuit elements including schottky diodes, which rectify the frequency component of an incoming wave to mostly zero frequency. The rectified signal is then controlled by time-domain responses of...
A very wideband GaAs MMIC Schottky diode frequency doubler has been designed and tested; it has at least a 10–75 GHz output frequency range with indications it works to 90 GHz. Measured in a test fixture with 1.85 mm connectors over an output frequency of 10–67 GHz, it has 9 to 15 dB conversion loss, −15 to −25 dBc fundamental suppression, −22 to −35 dBc third harmonic suppression, and 15 to 20 dB...
This paper reports on the intrinsic advantages of thermoelectronic flow sensors in comparison to their thermoresistive and thermoelectric counterparts. Hereafter, we will numerically and experimentally show that thermoelectronic flow sensors (i.e. thermal flow sensors employing p-n junction based devices as temperature sensors) benefit from the possibility of having the temperature sensor located...
Low turn-on voltage junction barrier Schottky (JBS) diodes were fabricated using very thin (20 nm) and extremely highly Mg doped (2×1020 cm−3) p+-GaN layer placed on top of n−-GaN epitaxial layers grown on n-GaN substrates. By omitting p-GaN layers in conventional p+-GaN/p-GaN/n−-GaN vertical p-n junction diodes, device processing has been eased and low specific on-resistances (Ron<0.3 mΩcm2) have...
In this paper, a novel topology of two-level voltage-type inverter is proposed. The proposed inverter has three bridge arms while each bridge is made up of 2 thyristors, 1 IGBT and 4 diodes. Thyristors complete the phase positioning of the inverter, IGBT completes the modulation of different modulation modes such as SPWM, SVPWM, and SHPWM, and the diodes complete the commutation of the bridge arms...
The long-term reliability of Schottky pn diodes (SPNDs) on diamond having widely used Ti/Pt/Au electrodes was investigated at 500°C in order to identify degradation phenomena at higher temperatures. A vital degradation event was observed after the passage of about 100 hours in that both forward and reverse currents were progressively reduced. AES depth profiling and X-STEM-EELS analyses revealed that...
This paper presents an overview of the main technical requirements of high voltage Silicon Carbide MOSFETs rated above 3300V when compared to the well-established requirements of Silicon IGBTs and diodes. Combined with a performance evaluation of existing 3300 V SiC MOSFET prototypes from ROHM, the paper will discuss the benefits and challenges facing these devices for targeting mainstream and future...
This paper describes the 2.4 GHz band SOI-CMOS bridge rectifier for sub-W class rectification. The bridge rectifier topology is suitable for IC integration because of full-wave-rectification without large sized filters. Furthermore, to realize high power operation, the series connected gate connected diodes made by NMOS FETs are employed for higher breakdown voltage. And the LPF is added to reduce...
This communication presents a novel diode switchable chiral metamaterial structure that manipulates the polarization in different ways depending on the active bias lines. Three different bias states that provide three totally different behaviors have been considered: polarization rotator, circular polarization converter and linear to circular converter.
Tunnel diodes are of interest to gain insights into the limitations of tunnel field effect transistors (TFETs) as they enable us to distinguish effects of the heterojunction from device parasitics found in a three terminal device. In the present work, we report on InAs/GaSb nanowire heterojunction tunnel diodes monolithically integrated on silicon-on-insulator substrate (SOI). The nanowires were grown...
Educational simulations can be useful for visualization of abstract and complex concepts and semiconductor physics seems ideal for this type of instructional support. The P-N diode is the most basic semiconductor device, but research has shown that its non-linear behavior poses problems to the students who struggle to explain its micro-scale behavior. Research in educational technologies for semiconductor...
Various domestic appliances use the Direct Current (DC) for its operation such as chargers, TV and DVD sets, laptops etc. However, the powers supplied in homes are Alternating Current (AC), 220/230V 50Hz. Several rectifiers have been developed over the time to convert this AC to DC (suitable for devices or appliances) and the better option among them is the diode bridge rectifier. In terms of power...
The paper present analysis of the features of microstrip discrete reflective phase shifters. The principle of multi-bit phase shiwfters design based on the transmission-type phase shifter is presented. Two specific schemes are given as the implementation example of the proposed phase shifters.
The deep trench (DT) is the key process to form the diode array in the diode-selected Phase Change Random Access Memory (PCRAM). In this work, the DT has been successfully developed with common etch chamber. We investigated the influence of different etch schemes on the DT profile. It is demonstrated Si etch with hard mask scheme can deliver better DT profile than that with soft mask. The gas impact...
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