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Using the preionization of an electron beam of 13 keV, the electron avalanche process in argon at a high pressure of 20 kPa was studied. A bright conical plasma plume, which looks like an electron avalanche, is captured when electrons are accelerated by a dc voltage of 8 kV.
In the SPM-based microplasma etching system proposed in our previous work, the stable discharge performance of microplasma device in reactive gases is the foundation of the following maskless scanning etching. In order to realize microplasma etching of SiO2 or Si3N4, CHF3 or CHF3/Ar mixtures is chosen as the operating gas. Although discharge characteristics of microcavity plasma devices in rare gases...
Nanocrystalline diamond/amorphous composite carbon films were deposited by plasma enhanced chemical vapour deposition method. The concentrations of species in the films were determined by RBS (Rutherford backscattering spectrometry) and ERD (elastic recoil detection) methods. The RBS results showed the main concentrations of C in the films. The concentration of hydrogen was approximately 20 at.%....
A novel maskless micro-nano plasma etching system based on parallel probe actuation is proposed. The advantages of this system are high etching rate, high fidelity, simple-structure, and flexible to fabricate various material. As a key component of the system, a microplasma reactor of metal-dielectric-metal sandwich structure with inverted, square pyramidal hollow cathode is designed and successfully...
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